Diamond thin films were grown on diamond (1 0 0) substrates in oxygen atmospheres by pulsed laser deposition (PLD) using a graphite target. In the optimum oxygen pressure of 5 × 10 -2 Torr, the sp 2 bonding fractions can be etched away preferentially and the sp 3 bonding fractions remain predominantly on the substrate. At substrate temperatures lower than 400 °C, amorphous carbon generates. At higher than 400 °C, diamond crystallites begin to generate in the amorphous carbon. At the suitable substrate temperatures between 550 and 650 °C, single-phase diamond films consisting of diamond crystal with diameters of 1-5 μm could be grown. Based on the results, the growth process of diamond thin film by PLD is considered.
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
- Physics and Astronomy(all)
- Surfaces and Interfaces
- Surfaces, Coatings and Films