Consideration of growth process of diamond thin films in ambient oxygen by pulsed laser ablation of graphite

Tsuyoshi Yoshitake; Takashi Nishiyama; Takeshi Hara; Kunihito Nagayama

doi:10.1016/S0169-4332(02)00423-3

Consideration of growth process of diamond thin films in ambient oxygen by pulsed laser ablation of graphite

Tsuyoshi Yoshitake, Takashi Nishiyama, Takeshi Hara, Kunihito Nagayama

Thermophysics and Fluid Mechanics

Research output: Contribution to journal › Conference article › peer-review

10 Citations (Scopus)

Abstract

Diamond thin films were grown on diamond (1 0 0) substrates in oxygen atmospheres by pulsed laser deposition (PLD) using a graphite target. In the optimum oxygen pressure of 5 × 10 ^-2 Torr, the sp ² bonding fractions can be etched away preferentially and the sp ³ bonding fractions remain predominantly on the substrate. At substrate temperatures lower than 400 °C, amorphous carbon generates. At higher than 400 °C, diamond crystallites begin to generate in the amorphous carbon. At the suitable substrate temperatures between 550 and 650 °C, single-phase diamond films consisting of diamond crystal with diameters of 1-5 μm could be grown. Based on the results, the growth process of diamond thin film by PLD is considered.

Original language	English
Pages (from-to)	352-356
Number of pages	5
Journal	Applied Surface Science
Volume	197-198
DOIs	https://doi.org/10.1016/S0169-4332(02)00423-3
Publication status	Published - Jan 1 2002
Event	Cola 2001 - Tsukuba, Japan Duration: Oct 1 2001 → Oct 1 2001

All Science Journal Classification (ASJC) codes

Chemistry(all)
Condensed Matter Physics
Physics and Astronomy(all)
Surfaces and Interfaces
Surfaces, Coatings and Films

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10.1016/S0169-4332(02)00423-3

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title = "Consideration of growth process of diamond thin films in ambient oxygen by pulsed laser ablation of graphite",

abstract = " Diamond thin films were grown on diamond (1 0 0) substrates in oxygen atmospheres by pulsed laser deposition (PLD) using a graphite target. In the optimum oxygen pressure of 5 × 10 -2 Torr, the sp 2 bonding fractions can be etched away preferentially and the sp 3 bonding fractions remain predominantly on the substrate. At substrate temperatures lower than 400 °C, amorphous carbon generates. At higher than 400 °C, diamond crystallites begin to generate in the amorphous carbon. At the suitable substrate temperatures between 550 and 650 °C, single-phase diamond films consisting of diamond crystal with diameters of 1-5 μm could be grown. Based on the results, the growth process of diamond thin film by PLD is considered.",

author = "Tsuyoshi Yoshitake and Takashi Nishiyama and Takeshi Hara and Kunihito Nagayama",

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T1 - Consideration of growth process of diamond thin films in ambient oxygen by pulsed laser ablation of graphite

AU - Yoshitake, Tsuyoshi

AU - Nishiyama, Takashi

AU - Hara, Takeshi

AU - Nagayama, Kunihito

PY - 2002/1/1

Y1 - 2002/1/1

N2 - Diamond thin films were grown on diamond (1 0 0) substrates in oxygen atmospheres by pulsed laser deposition (PLD) using a graphite target. In the optimum oxygen pressure of 5 × 10 -2 Torr, the sp 2 bonding fractions can be etched away preferentially and the sp 3 bonding fractions remain predominantly on the substrate. At substrate temperatures lower than 400 °C, amorphous carbon generates. At higher than 400 °C, diamond crystallites begin to generate in the amorphous carbon. At the suitable substrate temperatures between 550 and 650 °C, single-phase diamond films consisting of diamond crystal with diameters of 1-5 μm could be grown. Based on the results, the growth process of diamond thin film by PLD is considered.

AB - Diamond thin films were grown on diamond (1 0 0) substrates in oxygen atmospheres by pulsed laser deposition (PLD) using a graphite target. In the optimum oxygen pressure of 5 × 10 -2 Torr, the sp 2 bonding fractions can be etched away preferentially and the sp 3 bonding fractions remain predominantly on the substrate. At substrate temperatures lower than 400 °C, amorphous carbon generates. At higher than 400 °C, diamond crystallites begin to generate in the amorphous carbon. At the suitable substrate temperatures between 550 and 650 °C, single-phase diamond films consisting of diamond crystal with diameters of 1-5 μm could be grown. Based on the results, the growth process of diamond thin film by PLD is considered.

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