Consideration of growth process of diamond thin films in ambient oxygen by pulsed laser ablation of graphite

Tsuyoshi Yoshitake, Takashi Nishiyama, Takeshi Hara, Kunihito Nagayama

Research output: Contribution to journalConference article

10 Citations (Scopus)

Abstract

Diamond thin films were grown on diamond (1 0 0) substrates in oxygen atmospheres by pulsed laser deposition (PLD) using a graphite target. In the optimum oxygen pressure of 5 × 10 -2 Torr, the sp 2 bonding fractions can be etched away preferentially and the sp 3 bonding fractions remain predominantly on the substrate. At substrate temperatures lower than 400 °C, amorphous carbon generates. At higher than 400 °C, diamond crystallites begin to generate in the amorphous carbon. At the suitable substrate temperatures between 550 and 650 °C, single-phase diamond films consisting of diamond crystal with diameters of 1-5 μm could be grown. Based on the results, the growth process of diamond thin film by PLD is considered.

Original languageEnglish
Pages (from-to)352-356
Number of pages5
JournalApplied Surface Science
Volume197-198
DOIs
Publication statusPublished - Jan 1 2002
EventCola 2001 - Tsukuba, Japan
Duration: Oct 1 2001Oct 1 2001

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All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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