Consideration of the formation mechanism of an Al2O3-HfO2 eutectic film on a SiC substrate

Kyosuke Seya, Shunkichi Ueno, Toshiyuki Nishimura, Byungkoog Jang

Research output: Contribution to journalArticle

Abstract

An Al2O3-HfO2 eutectic EBC film was prepared on a SiC substrate by using the electric furnace heating and the optical zone melting methods. All of Al2O3 phase disappeared during the heating step at a temperature below the melting point, and all of the HfO2 phase reacted with the carbon and boron, which are included in SiC bulk as sintering agents, during the heating step at a temperature below the melting point. The thermal decomposition of the SiC phase, the reduction reaction of Al2O3 phase, the vaporization of the Al2O3 component, the reduction reaction of HfO2 and the formation of the HfC phase occurred at a temperature below the melting point. However, a highly dense HfC phase was formed on the SiC substrate. A rapid heating process becomes possible by using the optical zone melting method. A solidified film that was composed of a highly dense HfC layer as the intermediate layer and the Al2O3-HfO2 eutectic structure layer as the top coat was obtained by using the optical zone melting method.

Original languageEnglish
Pages (from-to)73-76
Number of pages4
JournalJournal of the Korean Physical Society
Volume68
Issue number1
DOIs
Publication statusPublished - Jan 1 2016
Externally publishedYes

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eutectics
zone melting
melting points
heating
electric furnaces
thermal decomposition
temperature
sintering
boron
carbon

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

Consideration of the formation mechanism of an Al2O3-HfO2 eutectic film on a SiC substrate. / Seya, Kyosuke; Ueno, Shunkichi; Nishimura, Toshiyuki; Jang, Byungkoog.

In: Journal of the Korean Physical Society, Vol. 68, No. 1, 01.01.2016, p. 73-76.

Research output: Contribution to journalArticle

Seya, Kyosuke ; Ueno, Shunkichi ; Nishimura, Toshiyuki ; Jang, Byungkoog. / Consideration of the formation mechanism of an Al2O3-HfO2 eutectic film on a SiC substrate. In: Journal of the Korean Physical Society. 2016 ; Vol. 68, No. 1. pp. 73-76.
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