Contact resistance in Schottky contact gated-four-probe a-Si thin-film transistor

Reiji Hattori, Jerzy Kanicki

Research output: Contribution to journalLetter

13 Citations (Scopus)

Abstract

The source and drain electrode contact resistance of the hydrogenated amorphous silicon (a-Si:H) thin-film transistor (TFT) with a Schottky-barrier source/drain contact was measured using a gated-four-probe TFT structure. Typically its variation with the gate bias is considered to be independent of the gate bias but we observed that contact resistances decrease exponentially with increasing gate bias. Our experimental data are explained by a combination of the tunneling current through the Schottky barrier and the access source/drain contact TFT resistance.

Original languageEnglish
JournalJapanese Journal of Applied Physics, Part 2: Letters
Volume42
Issue number8 A
Publication statusPublished - Aug 1 2003
Externally publishedYes

Fingerprint

Thin film transistors
Contact resistance
contact resistance
electric contacts
transistors
probes
thin films
Amorphous silicon
amorphous silicon
Electrodes
electrodes

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)

Cite this

Contact resistance in Schottky contact gated-four-probe a-Si thin-film transistor. / Hattori, Reiji; Kanicki, Jerzy.

In: Japanese Journal of Applied Physics, Part 2: Letters, Vol. 42, No. 8 A, 01.08.2003.

Research output: Contribution to journalLetter

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abstract = "The source and drain electrode contact resistance of the hydrogenated amorphous silicon (a-Si:H) thin-film transistor (TFT) with a Schottky-barrier source/drain contact was measured using a gated-four-probe TFT structure. Typically its variation with the gate bias is considered to be independent of the gate bias but we observed that contact resistances decrease exponentially with increasing gate bias. Our experimental data are explained by a combination of the tunneling current through the Schottky barrier and the access source/drain contact TFT resistance.",
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N2 - The source and drain electrode contact resistance of the hydrogenated amorphous silicon (a-Si:H) thin-film transistor (TFT) with a Schottky-barrier source/drain contact was measured using a gated-four-probe TFT structure. Typically its variation with the gate bias is considered to be independent of the gate bias but we observed that contact resistances decrease exponentially with increasing gate bias. Our experimental data are explained by a combination of the tunneling current through the Schottky barrier and the access source/drain contact TFT resistance.

AB - The source and drain electrode contact resistance of the hydrogenated amorphous silicon (a-Si:H) thin-film transistor (TFT) with a Schottky-barrier source/drain contact was measured using a gated-four-probe TFT structure. Typically its variation with the gate bias is considered to be independent of the gate bias but we observed that contact resistances decrease exponentially with increasing gate bias. Our experimental data are explained by a combination of the tunneling current through the Schottky barrier and the access source/drain contact TFT resistance.

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