Continuous growth of SiC single crystal by the spray dried powder made of ultra-fine particle precursors

Y. Yamada, Shinichi Nishizawa, S. Nakashima, K. Arai

Research output: Contribution to journalConference article

Abstract

We succeeded in continuous growth of SiC single crystal by CPD (Chemical Particle Deposition) method with the spray dried ultra-fine particle precursor powder. By the introduction of the spray dried spherical powder, we could clarify the mechanism of SiC single crystal growth by CPD method, through the observation of the deformation and the transformation of the spherical precursor powder into the epitaxial SiC grown layer on the seed crystal surface. The SiC layer grown by this method showed promising crystal quality indicated by the rocking curve with FWHM of 70-80 arcsec.

Original languageEnglish
Pages (from-to)131-134
Number of pages4
JournalMaterials Science Forum
Volume457-460
Issue numberI
Publication statusPublished - Nov 29 2004
Externally publishedYes
EventProceedings of the 10th International Conference on Silicon Carbide and Related Materials, ICSCRM 2003 - Lyon, France
Duration: Oct 5 2003Oct 10 2003

Fingerprint

Powders
sprayers
Single crystals
single crystals
Crystals
Crystallization
Full width at half maximum
crystal surfaces
Crystal growth
crystal growth
seeds
curves
crystals

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Continuous growth of SiC single crystal by the spray dried powder made of ultra-fine particle precursors. / Yamada, Y.; Nishizawa, Shinichi; Nakashima, S.; Arai, K.

In: Materials Science Forum, Vol. 457-460, No. I, 29.11.2004, p. 131-134.

Research output: Contribution to journalConference article

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