Continuous-wave operation and mirror loss of a U-shaped GaAs/AlGaAs laser diode with two totally reflecting mirrors

Fusao Shimokawa, Hidenao Tanaka, Renshi Sawada, Shigeji Hara

Research output: Contribution to journalArticle

15 Citations (Scopus)

Abstract

A U-shaped GaAs/AlGaAs laser diode (LD) with totally reflecting mirrors is fabricated. Reactive fast atom beam etching technique with Cl2 gas is applied to fabricate the totally reflecting mirrors. Continuous-wave operation of the U-shaped LD with two totally reflecting mirrors is achieved using a graded-index separate-confinement-heterostructure single quantum well laser wafer. A threshold current of 75 mA and a light output power of over 5 mW are obtained with a 40-μm-wide and 300-μm-long mesa stripe structure. Totally reflecting mirror loss is estimated from measurements of the threshold current density for different cavity lengths. The loss of the totally reflecting mirror is about 0.95 dB per reflection.

Original languageEnglish
Pages (from-to)1617-1619
Number of pages3
JournalApplied Physics Letters
Volume56
Issue number17
DOIs
Publication statusPublished - Dec 1 1990
Externally publishedYes

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continuous radiation
aluminum gallium arsenides
semiconductor lasers
mirrors
threshold currents
mesas
quantum well lasers
etching
wafers
current density
cavities
output
gases
atoms

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Continuous-wave operation and mirror loss of a U-shaped GaAs/AlGaAs laser diode with two totally reflecting mirrors. / Shimokawa, Fusao; Tanaka, Hidenao; Sawada, Renshi; Hara, Shigeji.

In: Applied Physics Letters, Vol. 56, No. 17, 01.12.1990, p. 1617-1619.

Research output: Contribution to journalArticle

Shimokawa, Fusao ; Tanaka, Hidenao ; Sawada, Renshi ; Hara, Shigeji. / Continuous-wave operation and mirror loss of a U-shaped GaAs/AlGaAs laser diode with two totally reflecting mirrors. In: Applied Physics Letters. 1990 ; Vol. 56, No. 17. pp. 1617-1619.
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