Contribution of electron tunneling transport in semiconductor gas sensor

N. Yamazoe, Kengo Shimanoe, C. Sawada

Research output: Contribution to journalArticle

48 Citations (Scopus)

Abstract

It was found that thin film devices derived from SnO2 sols by spin-coating method showed unique thermal behavior of electric resistance in air involving a temperature region where resistance was independent of temperature. The temperature independent resistance region extended up to 400 °C, replacing a region of temperature-conventionally dependent resistance, as film thickness increased. Such unique behavior of resistance was observed also for a brush-coated device but not for screen-coated thick film devices or disk-type device, suggesting that the absence of mechanical forces applied during device fabrication favored the occurrence of the unique behavior. It was shown that the unique behavior could be well accounted for by postulating a combination of electron tunneling transport and conventional migration transport. Calculation of tunneling probability based on a simple model allowed estimating that electron tunneling transport can take place between oxide grains with a probability of 0.01 or larger if a gap in between is narrower than 0.01 nm.

Original languageEnglish
Pages (from-to)8302-8309
Number of pages8
JournalThin Solid Films
Volume515
Issue number23
DOIs
Publication statusPublished - Sep 14 2007

Fingerprint

Electron tunneling
electron tunneling
Chemical sensors
Semiconductor materials
sensors
gases
Thick film devices
Thin film devices
Temperature
Spin coating
Polymethyl Methacrylate
Brushes
Sols
temperature
Oxides
Film thickness
brushes
thick films
coating
Fabrication

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

Cite this

Contribution of electron tunneling transport in semiconductor gas sensor. / Yamazoe, N.; Shimanoe, Kengo; Sawada, C.

In: Thin Solid Films, Vol. 515, No. 23, 14.09.2007, p. 8302-8309.

Research output: Contribution to journalArticle

Yamazoe, N. ; Shimanoe, Kengo ; Sawada, C. / Contribution of electron tunneling transport in semiconductor gas sensor. In: Thin Solid Films. 2007 ; Vol. 515, No. 23. pp. 8302-8309.
@article{1d41f5befe734a4e8ae6413cf48d9178,
title = "Contribution of electron tunneling transport in semiconductor gas sensor",
abstract = "It was found that thin film devices derived from SnO2 sols by spin-coating method showed unique thermal behavior of electric resistance in air involving a temperature region where resistance was independent of temperature. The temperature independent resistance region extended up to 400 °C, replacing a region of temperature-conventionally dependent resistance, as film thickness increased. Such unique behavior of resistance was observed also for a brush-coated device but not for screen-coated thick film devices or disk-type device, suggesting that the absence of mechanical forces applied during device fabrication favored the occurrence of the unique behavior. It was shown that the unique behavior could be well accounted for by postulating a combination of electron tunneling transport and conventional migration transport. Calculation of tunneling probability based on a simple model allowed estimating that electron tunneling transport can take place between oxide grains with a probability of 0.01 or larger if a gap in between is narrower than 0.01 nm.",
author = "N. Yamazoe and Kengo Shimanoe and C. Sawada",
year = "2007",
month = "9",
day = "14",
doi = "10.1016/j.tsf.2007.03.018",
language = "English",
volume = "515",
pages = "8302--8309",
journal = "Thin Solid Films",
issn = "0040-6090",
publisher = "Elsevier",
number = "23",

}

TY - JOUR

T1 - Contribution of electron tunneling transport in semiconductor gas sensor

AU - Yamazoe, N.

AU - Shimanoe, Kengo

AU - Sawada, C.

PY - 2007/9/14

Y1 - 2007/9/14

N2 - It was found that thin film devices derived from SnO2 sols by spin-coating method showed unique thermal behavior of electric resistance in air involving a temperature region where resistance was independent of temperature. The temperature independent resistance region extended up to 400 °C, replacing a region of temperature-conventionally dependent resistance, as film thickness increased. Such unique behavior of resistance was observed also for a brush-coated device but not for screen-coated thick film devices or disk-type device, suggesting that the absence of mechanical forces applied during device fabrication favored the occurrence of the unique behavior. It was shown that the unique behavior could be well accounted for by postulating a combination of electron tunneling transport and conventional migration transport. Calculation of tunneling probability based on a simple model allowed estimating that electron tunneling transport can take place between oxide grains with a probability of 0.01 or larger if a gap in between is narrower than 0.01 nm.

AB - It was found that thin film devices derived from SnO2 sols by spin-coating method showed unique thermal behavior of electric resistance in air involving a temperature region where resistance was independent of temperature. The temperature independent resistance region extended up to 400 °C, replacing a region of temperature-conventionally dependent resistance, as film thickness increased. Such unique behavior of resistance was observed also for a brush-coated device but not for screen-coated thick film devices or disk-type device, suggesting that the absence of mechanical forces applied during device fabrication favored the occurrence of the unique behavior. It was shown that the unique behavior could be well accounted for by postulating a combination of electron tunneling transport and conventional migration transport. Calculation of tunneling probability based on a simple model allowed estimating that electron tunneling transport can take place between oxide grains with a probability of 0.01 or larger if a gap in between is narrower than 0.01 nm.

UR - http://www.scopus.com/inward/record.url?scp=34548614504&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=34548614504&partnerID=8YFLogxK

U2 - 10.1016/j.tsf.2007.03.018

DO - 10.1016/j.tsf.2007.03.018

M3 - Article

VL - 515

SP - 8302

EP - 8309

JO - Thin Solid Films

JF - Thin Solid Films

SN - 0040-6090

IS - 23

ER -