TY - JOUR
T1 - Contribution of ionic precursors to deposition rate of a-Si:H films fabricated by plasma CVD
AU - Toko, S.
AU - Hashimoto, Y.
AU - Kanemitu, Y.
AU - Torigoe, Y.
AU - Seo, H.
AU - Uchida, G.
AU - Kamataki, K.
AU - Itagaki, N.
AU - Koga, K.
AU - Shiratani, M.
PY - 2014
Y1 - 2014
N2 - We have studied contribution of ionic precursors to deposition rate of a-Si:H films in the downstream region of a multi-hollow discharge plasma CVD reactor using a DC bias grid and QCMs. The deposition rate decreases from 1.1 to 0.93 by applying negative bias voltage to the bias grid. The ionic precursors contribute to 7% of the total deposition rate and the dominant ionic precursors are considered to be negatively charged clusters.
AB - We have studied contribution of ionic precursors to deposition rate of a-Si:H films in the downstream region of a multi-hollow discharge plasma CVD reactor using a DC bias grid and QCMs. The deposition rate decreases from 1.1 to 0.93 by applying negative bias voltage to the bias grid. The ionic precursors contribute to 7% of the total deposition rate and the dominant ionic precursors are considered to be negatively charged clusters.
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U2 - 10.1088/1742-6596/518/1/012008
DO - 10.1088/1742-6596/518/1/012008
M3 - Conference article
AN - SCOPUS:84903433227
VL - 518
JO - Journal of Physics: Conference Series
JF - Journal of Physics: Conference Series
SN - 1742-6588
IS - 1
M1 - 012008
T2 - 26th Symposium on Plasma Sciences for Materials, SPSM 2013
Y2 - 22 September 2013 through 23 September 2013
ER -