Contribution of ionic precursors to deposition rate of a-Si:H films fabricated by plasma CVD

S. Toko, Y. Hashimoto, Y. Kanemitu, Y. Torigoe, Hyunwoong Seo, G. Uchida, Kunihiro Kamataki, Naho Itagaki, Kazunori Koga, Masaharu Shiratani

Research output: Contribution to journalConference article

1 Citation (Scopus)

Abstract

We have studied contribution of ionic precursors to deposition rate of a-Si:H films in the downstream region of a multi-hollow discharge plasma CVD reactor using a DC bias grid and QCMs. The deposition rate decreases from 1.1 to 0.93 by applying negative bias voltage to the bias grid. The ionic precursors contribute to 7% of the total deposition rate and the dominant ionic precursors are considered to be negatively charged clusters.

Original languageEnglish
Article number012008
JournalJournal of Physics: Conference Series
Volume518
Issue number1
DOIs
Publication statusPublished - Jan 1 2014
Event26th Symposium on Plasma Sciences for Materials, SPSM 2013 - Fukuoka, Japan
Duration: Sep 23 2013Sep 24 2013

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vapor deposition
grids
plasma jets
hollow
direct current
reactors
electric potential

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

Contribution of ionic precursors to deposition rate of a-Si:H films fabricated by plasma CVD. / Toko, S.; Hashimoto, Y.; Kanemitu, Y.; Torigoe, Y.; Seo, Hyunwoong; Uchida, G.; Kamataki, Kunihiro; Itagaki, Naho; Koga, Kazunori; Shiratani, Masaharu.

In: Journal of Physics: Conference Series, Vol. 518, No. 1, 012008, 01.01.2014.

Research output: Contribution to journalConference article

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AU - Hashimoto, Y.

AU - Kanemitu, Y.

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AU - Seo, Hyunwoong

AU - Uchida, G.

AU - Kamataki, Kunihiro

AU - Itagaki, Naho

AU - Koga, Kazunori

AU - Shiratani, Masaharu

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