Abstract
We have studied contribution of ionic precursors to deposition rate of a-Si:H films in the downstream region of a multi-hollow discharge plasma CVD reactor using a DC bias grid and QCMs. The deposition rate decreases from 1.1 to 0.93 by applying negative bias voltage to the bias grid. The ionic precursors contribute to 7% of the total deposition rate and the dominant ionic precursors are considered to be negatively charged clusters.
| Original language | English |
|---|---|
| Article number | 012008 |
| Journal | Journal of Physics: Conference Series |
| Volume | 518 |
| Issue number | 1 |
| DOIs | |
| Publication status | Published - Jan 1 2014 |
| Event | 26th Symposium on Plasma Sciences for Materials, SPSM 2013 - Fukuoka, Japan Duration: Sep 23 2013 → Sep 24 2013 |
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All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)
Cite this
Contribution of ionic precursors to deposition rate of a-Si:H films fabricated by plasma CVD. / Toko, S.; Hashimoto, Y.; Kanemitu, Y.; Torigoe, Y.; Seo, Hyunwoong; Uchida, G.; Kamataki, Kunihiro; Itagaki, Naho; Koga, Kazunori; Shiratani, Masaharu.
In: Journal of Physics: Conference Series, Vol. 518, No. 1, 012008, 01.01.2014.Research output: Contribution to journal › Conference article
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TY - JOUR
T1 - Contribution of ionic precursors to deposition rate of a-Si:H films fabricated by plasma CVD
AU - Toko, S.
AU - Hashimoto, Y.
AU - Kanemitu, Y.
AU - Torigoe, Y.
AU - Seo, Hyunwoong
AU - Uchida, G.
AU - Kamataki, Kunihiro
AU - Itagaki, Naho
AU - Koga, Kazunori
AU - Shiratani, Masaharu
PY - 2014/1/1
Y1 - 2014/1/1
N2 - We have studied contribution of ionic precursors to deposition rate of a-Si:H films in the downstream region of a multi-hollow discharge plasma CVD reactor using a DC bias grid and QCMs. The deposition rate decreases from 1.1 to 0.93 by applying negative bias voltage to the bias grid. The ionic precursors contribute to 7% of the total deposition rate and the dominant ionic precursors are considered to be negatively charged clusters.
AB - We have studied contribution of ionic precursors to deposition rate of a-Si:H films in the downstream region of a multi-hollow discharge plasma CVD reactor using a DC bias grid and QCMs. The deposition rate decreases from 1.1 to 0.93 by applying negative bias voltage to the bias grid. The ionic precursors contribute to 7% of the total deposition rate and the dominant ionic precursors are considered to be negatively charged clusters.
UR - http://www.scopus.com/inward/record.url?scp=84903433227&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84903433227&partnerID=8YFLogxK
U2 - 10.1088/1742-6596/518/1/012008
DO - 10.1088/1742-6596/518/1/012008
M3 - Conference article
AN - SCOPUS:84903433227
VL - 518
JO - Journal of Physics: Conference Series
JF - Journal of Physics: Conference Series
SN - 1742-6588
IS - 1
M1 - 012008
ER -