Contribution of ionic precursors to deposition rate of a-Si:H films fabricated by plasma CVD

S. Toko, Y. Hashimoto, Y. Kanemitu, Y. Torigoe, H. Seo, G. Uchida, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani

Research output: Contribution to journalConference article

1 Citation (Scopus)

Abstract

We have studied contribution of ionic precursors to deposition rate of a-Si:H films in the downstream region of a multi-hollow discharge plasma CVD reactor using a DC bias grid and QCMs. The deposition rate decreases from 1.1 to 0.93 by applying negative bias voltage to the bias grid. The ionic precursors contribute to 7% of the total deposition rate and the dominant ionic precursors are considered to be negatively charged clusters.

Original languageEnglish
Article number012008
JournalJournal of Physics: Conference Series
Volume518
Issue number1
DOIs
Publication statusPublished - 2014
Event26th Symposium on Plasma Sciences for Materials, SPSM 2013 - Fukuoka, Japan
Duration: Sep 23 2013Sep 24 2013

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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