Control of domain structures in magnetic multilayer using submicron-patterned antiferromagnetic structure

Takashi Kimura, Yoshio Itagaki, Fujio Wakaya, Kenji Gamo

Research output: Contribution to journalConference article

2 Citations (Scopus)

Abstract

Influence of the antidot structure of the CoO layer in the CoO/Co/Cu/NiFe film on the magnetization process in each individual layer was studied by measuring the magnetoresistance. Resistance changes corresponding to the magnetization reversal of the Co layer in the antidot region were observed in addition to the main changes corresponding to that of the Co layer covered by the CoO. This suggests that the domain structure of the Co layer can be controlled by the patterned CoO. It was found that the domain walls nucleated in the antidot region enhance the coercivity of the Co layer and cause the loop shift in the NiFe layer, whose direction is parallel to the exchange bias from the CoO, via the interlayer coupling.

Original languageEnglish
Pages (from-to)585-591
Number of pages7
JournalMicroelectronic Engineering
Volume61-62
DOIs
Publication statusPublished - Jul 1 2002
Externally publishedYes
EventMicro and Nano Engineering 2001 - Grenoble, France
Duration: Sep 16 2001Sep 19 2001

Fingerprint

Magnetic multilayers
Magnetization reversal
Domain walls
Magnetoresistance
Coercive force
Magnetization
magnetization
Direction compound
coercivity
domain wall
interlayers
causes
shift

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

Cite this

Control of domain structures in magnetic multilayer using submicron-patterned antiferromagnetic structure. / Kimura, Takashi; Itagaki, Yoshio; Wakaya, Fujio; Gamo, Kenji.

In: Microelectronic Engineering, Vol. 61-62, 01.07.2002, p. 585-591.

Research output: Contribution to journalConference article

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N2 - Influence of the antidot structure of the CoO layer in the CoO/Co/Cu/NiFe film on the magnetization process in each individual layer was studied by measuring the magnetoresistance. Resistance changes corresponding to the magnetization reversal of the Co layer in the antidot region were observed in addition to the main changes corresponding to that of the Co layer covered by the CoO. This suggests that the domain structure of the Co layer can be controlled by the patterned CoO. It was found that the domain walls nucleated in the antidot region enhance the coercivity of the Co layer and cause the loop shift in the NiFe layer, whose direction is parallel to the exchange bias from the CoO, via the interlayer coupling.

AB - Influence of the antidot structure of the CoO layer in the CoO/Co/Cu/NiFe film on the magnetization process in each individual layer was studied by measuring the magnetoresistance. Resistance changes corresponding to the magnetization reversal of the Co layer in the antidot region were observed in addition to the main changes corresponding to that of the Co layer covered by the CoO. This suggests that the domain structure of the Co layer can be controlled by the patterned CoO. It was found that the domain walls nucleated in the antidot region enhance the coercivity of the Co layer and cause the loop shift in the NiFe layer, whose direction is parallel to the exchange bias from the CoO, via the interlayer coupling.

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