Control of extended defects in cast and seed cast Si ingots for photovoltaic application

Takashi Sekiguchi; Karolin Jiptner; Ronit R. Prakash; Jun Chen; Yoshiji Miyamura; Hirofumi Harada; Satoshi Nakano; Bin Gao; Koichi Kakimoto

doi:10.1002/pssc.201400230

Control of extended defects in cast and seed cast Si ingots for photovoltaic application

Takashi Sekiguchi, Karolin Jiptner, Ronit R. Prakash, Jun Chen, Yoshiji Miyamura, Hirofumi Harada, Satoshi Nakano, Bin Gao, Koichi Kakimoto

Division of Renewable Energy Dynamics

Research output: Contribution to journal › Article › peer-review

Abstract

We discuss the defect evolution in conventional cast and seed cast Si ingot growths for photovoltaic application. Three different cast Si ingots were grown in one directional solidification furnace. The two extremes are the seed cast ingots (mono-Si), where growth starts from monocrystalline silicon seeds, and the multicrystalline silicon grown from small randomly oriented grains. The conventional multicrystalline (mc-) cast Si ingots are grown without any seeds and have grain structures in between the two extremes. It was found that in mc-Si the evolution of grain boundaries take place in several steps. On the other hand, the major defects in mono-Si are dislocations and are generated by stress due to thermal gradient in the ingot.

Original language	English
Pages (from-to)	1094-1098
Number of pages	5
Journal	Physica Status Solidi (C) Current Topics in Solid State Physics
Volume	12
Issue number	8
DOIs	https://doi.org/10.1002/pssc.201400230
Publication status	Published - Aug 1 2015

All Science Journal Classification (ASJC) codes

Condensed Matter Physics

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

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10.1002/pssc.201400230

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title = "Control of extended defects in cast and seed cast Si ingots for photovoltaic application",

abstract = "We discuss the defect evolution in conventional cast and seed cast Si ingot growths for photovoltaic application. Three different cast Si ingots were grown in one directional solidification furnace. The two extremes are the seed cast ingots (mono-Si), where growth starts from monocrystalline silicon seeds, and the multicrystalline silicon grown from small randomly oriented grains. The conventional multicrystalline (mc-) cast Si ingots are grown without any seeds and have grain structures in between the two extremes. It was found that in mc-Si the evolution of grain boundaries take place in several steps. On the other hand, the major defects in mono-Si are dislocations and are generated by stress due to thermal gradient in the ingot.",

author = "Takashi Sekiguchi and Karolin Jiptner and Prakash, {Ronit R.} and Jun Chen and Yoshiji Miyamura and Hirofumi Harada and Satoshi Nakano and Bin Gao and Koichi Kakimoto",

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T1 - Control of extended defects in cast and seed cast Si ingots for photovoltaic application

AU - Sekiguchi, Takashi

AU - Jiptner, Karolin

AU - Prakash, Ronit R.

AU - Chen, Jun

AU - Miyamura, Yoshiji

AU - Harada, Hirofumi

AU - Nakano, Satoshi

AU - Gao, Bin

AU - Kakimoto, Koichi

PY - 2015/8/1

Y1 - 2015/8/1

N2 - We discuss the defect evolution in conventional cast and seed cast Si ingot growths for photovoltaic application. Three different cast Si ingots were grown in one directional solidification furnace. The two extremes are the seed cast ingots (mono-Si), where growth starts from monocrystalline silicon seeds, and the multicrystalline silicon grown from small randomly oriented grains. The conventional multicrystalline (mc-) cast Si ingots are grown without any seeds and have grain structures in between the two extremes. It was found that in mc-Si the evolution of grain boundaries take place in several steps. On the other hand, the major defects in mono-Si are dislocations and are generated by stress due to thermal gradient in the ingot.

AB - We discuss the defect evolution in conventional cast and seed cast Si ingot growths for photovoltaic application. Three different cast Si ingots were grown in one directional solidification furnace. The two extremes are the seed cast ingots (mono-Si), where growth starts from monocrystalline silicon seeds, and the multicrystalline silicon grown from small randomly oriented grains. The conventional multicrystalline (mc-) cast Si ingots are grown without any seeds and have grain structures in between the two extremes. It was found that in mc-Si the evolution of grain boundaries take place in several steps. On the other hand, the major defects in mono-Si are dislocations and are generated by stress due to thermal gradient in the ingot.

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Control of extended defects in cast and seed cast Si ingots for photovoltaic application

Abstract

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