Control of extended defects in cast and seed cast Si ingots for photovoltaic application

Takashi Sekiguchi, Karolin Jiptner, Ronit R. Prakash, Jun Chen, Yoshiji Miyamura, Hirofumi Harada, Satoshi Nakano, Bin Gao, Koichi Kakimoto

Research output: Contribution to journalArticle

Abstract

We discuss the defect evolution in conventional cast and seed cast Si ingot growths for photovoltaic application. Three different cast Si ingots were grown in one directional solidification furnace. The two extremes are the seed cast ingots (mono-Si), where growth starts from monocrystalline silicon seeds, and the multicrystalline silicon grown from small randomly oriented grains. The conventional multicrystalline (mc-) cast Si ingots are grown without any seeds and have grain structures in between the two extremes. It was found that in mc-Si the evolution of grain boundaries take place in several steps. On the other hand, the major defects in mono-Si are dislocations and are generated by stress due to thermal gradient in the ingot.

Original languageEnglish
Pages (from-to)1094-1098
Number of pages5
JournalPhysica Status Solidi (C) Current Topics in Solid State Physics
Volume12
Issue number8
DOIs
Publication statusPublished - Aug 1 2015

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics

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