Control of ferroelectric properties of PbZrxTi1-xO3 thin film for electron emission device driven by low voltage

Y. Yamagata, M. Yamazato, T. Ikegami, K. Ebihara, J. Narayan, A. M. Grishin

Research output: Contribution to journalConference articlepeer-review

Abstract

Epitaxial PbZr0.52Ti0.48O3/YBa2Cu3O7-x heterostructures on Nd:YAlO3 and MgO substrates were fabricated by KrF pulsed laser deposition. The coercive electric field of the PZT films increased with decrease of the film thickness from 1.2 μm to 0.04 μm, while the magnitude of spontaneous polarization was almost constant in this thickness range. It was found that the dependence of the film thickness d on the coercive electric field Ec was Ec ∝ d-2/3. This results from that the PZT/YBCO heterostructure has the one dimensional ferroelectric domain growth without non-ferroelectric phase. The polarization of Au/PZT/YBCO/(MgO or YAlO) capacitors can be changed by the applied voltage below 5 V.

Original languageEnglish
Pages (from-to)759-764
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume541
Publication statusPublished - Jan 1 1999
Externally publishedYes
EventProceedings of the 1998 MRS Fall Meeting - The Symposium 'Advanced Catalytic Materials-1998' - Boston, MA, USA
Duration: Nov 30 1998Dec 3 1998

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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