Abstract
Epitaxial PbZr0.52Ti0.48O3/YBa2Cu3O7-x heterostructures on Nd:YAlO3 and MgO substrates were fabricated by KrF pulsed laser deposition. The coercive electric field of the PZT films increased with decrease of the film thickness from 1.2 μm to 0.04 μm, while the magnitude of spontaneous polarization was almost constant in this thickness range. It was found that the dependence of the film thickness d on the coercive electric field Ec was Ec ∝ d-2/3. This results from that the PZT/YBCO heterostructure has the one dimensional ferroelectric domain growth without non-ferroelectric phase. The polarization of Au/PZT/YBCO/(MgO or YAlO) capacitors can be changed by the applied voltage below 5 V.
| Original language | English |
|---|---|
| Pages (from-to) | 759-764 |
| Number of pages | 6 |
| Journal | Materials Research Society Symposium - Proceedings |
| Volume | 541 |
| Publication status | Published - Jan 1 1999 |
| Externally published | Yes |
| Event | Proceedings of the 1998 MRS Fall Meeting - The Symposium 'Advanced Catalytic Materials-1998' - Boston, MA, USA Duration: Nov 30 1998 → Dec 3 1998 |
Fingerprint
All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering
Cite this
Control of ferroelectric properties of PbZrxTi1-xO3 thin film for electron emission device driven by low voltage. / Yamagata, Y.; Yamazato, M.; Ikegami, T.; Ebihara, K.; Narayan, J.; Grishin, A. M.
In: Materials Research Society Symposium - Proceedings, Vol. 541, 01.01.1999, p. 759-764.Research output: Contribution to journal › Conference article
}
TY - JOUR
T1 - Control of ferroelectric properties of PbZrxTi1-xO3 thin film for electron emission device driven by low voltage
AU - Yamagata, Y.
AU - Yamazato, M.
AU - Ikegami, T.
AU - Ebihara, K.
AU - Narayan, J.
AU - Grishin, A. M.
PY - 1999/1/1
Y1 - 1999/1/1
N2 - Epitaxial PbZr0.52Ti0.48O3/YBa2Cu3O7-x heterostructures on Nd:YAlO3 and MgO substrates were fabricated by KrF pulsed laser deposition. The coercive electric field of the PZT films increased with decrease of the film thickness from 1.2 μm to 0.04 μm, while the magnitude of spontaneous polarization was almost constant in this thickness range. It was found that the dependence of the film thickness d on the coercive electric field Ec was Ec ∝ d-2/3. This results from that the PZT/YBCO heterostructure has the one dimensional ferroelectric domain growth without non-ferroelectric phase. The polarization of Au/PZT/YBCO/(MgO or YAlO) capacitors can be changed by the applied voltage below 5 V.
AB - Epitaxial PbZr0.52Ti0.48O3/YBa2Cu3O7-x heterostructures on Nd:YAlO3 and MgO substrates were fabricated by KrF pulsed laser deposition. The coercive electric field of the PZT films increased with decrease of the film thickness from 1.2 μm to 0.04 μm, while the magnitude of spontaneous polarization was almost constant in this thickness range. It was found that the dependence of the film thickness d on the coercive electric field Ec was Ec ∝ d-2/3. This results from that the PZT/YBCO heterostructure has the one dimensional ferroelectric domain growth without non-ferroelectric phase. The polarization of Au/PZT/YBCO/(MgO or YAlO) capacitors can be changed by the applied voltage below 5 V.
UR - http://www.scopus.com/inward/record.url?scp=0032592249&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0032592249&partnerID=8YFLogxK
M3 - Conference article
AN - SCOPUS:0032592249
VL - 541
SP - 759
EP - 764
JO - Materials Research Society Symposium - Proceedings
JF - Materials Research Society Symposium - Proceedings
SN - 0272-9172
ER -