Control of ferroelectric properties of PbZrxTi1-xO3 thin film for electron emission device driven by low voltage

Y. Yamagata; M. Yamazato; T. Ikegami; K. Ebihara; J. Narayan; A. M. Grishin

Control of ferroelectric properties of PbZr_xTi_1-xO₃ thin film for electron emission device driven by low voltage

Y. Yamagata, M. Yamazato, T. Ikegami, K. Ebihara, J. Narayan, A. M. Grishin

Research output: Contribution to journal › Conference article › peer-review

Abstract

Epitaxial PbZr_0.52Ti_0.48O₃/YBa₂Cu₃O_7-x heterostructures on Nd:YAlO₃ and MgO substrates were fabricated by KrF pulsed laser deposition. The coercive electric field of the PZT films increased with decrease of the film thickness from 1.2 μm to 0.04 μm, while the magnitude of spontaneous polarization was almost constant in this thickness range. It was found that the dependence of the film thickness d on the coercive electric field E_c was E_c ∝ d^-2/3. This results from that the PZT/YBCO heterostructure has the one dimensional ferroelectric domain growth without non-ferroelectric phase. The polarization of Au/PZT/YBCO/(MgO or YAlO) capacitors can be changed by the applied voltage below 5 V.

Original language	English
Pages (from-to)	759-764
Number of pages	6
Journal	Materials Research Society Symposium - Proceedings
Volume	541
Publication status	Published - Jan 1 1999
Externally published	Yes
Event	Proceedings of the 1998 MRS Fall Meeting - The Symposium 'Advanced Catalytic Materials-1998' - Boston, MA, USA Duration: Nov 30 1998 → Dec 3 1998

All Science Journal Classification (ASJC) codes

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Cite this

@article{415b0d4f14034fcfa3df6ced295a823f,

title = "Control of ferroelectric properties of PbZrxTi1-xO3 thin film for electron emission device driven by low voltage",

abstract = "Epitaxial PbZr0.52Ti0.48O3/YBa2Cu3O7-x heterostructures on Nd:YAlO3 and MgO substrates were fabricated by KrF pulsed laser deposition. The coercive electric field of the PZT films increased with decrease of the film thickness from 1.2 μm to 0.04 μm, while the magnitude of spontaneous polarization was almost constant in this thickness range. It was found that the dependence of the film thickness d on the coercive electric field Ec was Ec ∝ d-2/3. This results from that the PZT/YBCO heterostructure has the one dimensional ferroelectric domain growth without non-ferroelectric phase. The polarization of Au/PZT/YBCO/(MgO or YAlO) capacitors can be changed by the applied voltage below 5 V.",

author = "Y. Yamagata and M. Yamazato and T. Ikegami and K. Ebihara and J. Narayan and Grishin, {A. M.}",

year = "1999",

month = jan,

day = "1",

language = "English",

volume = "541",

pages = "759--764",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

note = "Proceedings of the 1998 MRS Fall Meeting - The Symposium 'Advanced Catalytic Materials-1998' ; Conference date: 30-11-1998 Through 03-12-1998",

}

TY - JOUR

T1 - Control of ferroelectric properties of PbZrxTi1-xO3 thin film for electron emission device driven by low voltage

AU - Yamagata, Y.

AU - Yamazato, M.

AU - Ikegami, T.

AU - Ebihara, K.

AU - Narayan, J.

AU - Grishin, A. M.

PY - 1999/1/1

Y1 - 1999/1/1

N2 - Epitaxial PbZr0.52Ti0.48O3/YBa2Cu3O7-x heterostructures on Nd:YAlO3 and MgO substrates were fabricated by KrF pulsed laser deposition. The coercive electric field of the PZT films increased with decrease of the film thickness from 1.2 μm to 0.04 μm, while the magnitude of spontaneous polarization was almost constant in this thickness range. It was found that the dependence of the film thickness d on the coercive electric field Ec was Ec ∝ d-2/3. This results from that the PZT/YBCO heterostructure has the one dimensional ferroelectric domain growth without non-ferroelectric phase. The polarization of Au/PZT/YBCO/(MgO or YAlO) capacitors can be changed by the applied voltage below 5 V.

AB - Epitaxial PbZr0.52Ti0.48O3/YBa2Cu3O7-x heterostructures on Nd:YAlO3 and MgO substrates were fabricated by KrF pulsed laser deposition. The coercive electric field of the PZT films increased with decrease of the film thickness from 1.2 μm to 0.04 μm, while the magnitude of spontaneous polarization was almost constant in this thickness range. It was found that the dependence of the film thickness d on the coercive electric field Ec was Ec ∝ d-2/3. This results from that the PZT/YBCO heterostructure has the one dimensional ferroelectric domain growth without non-ferroelectric phase. The polarization of Au/PZT/YBCO/(MgO or YAlO) capacitors can be changed by the applied voltage below 5 V.

UR - http://www.scopus.com/inward/record.url?scp=0032592249&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0032592249&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0032592249

VL - 541

SP - 759

EP - 764

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

SN - 0272-9172

T2 - Proceedings of the 1998 MRS Fall Meeting - The Symposium 'Advanced Catalytic Materials-1998'

Y2 - 30 November 1998 through 3 December 1998

ER -

Control of ferroelectric properties of PbZr_xTi_1-xO₃ thin film for electron emission device driven by low voltage

Abstract

All Science Journal Classification (ASJC) codes

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