Abstract
ITO modification using heat treatment for low driving voltage of OLEDs is proposed. Annealing of a regular ITO layer at 250°C in a GB led to both structural and surface changes. As a result, ITO work function was decreased, reducing the injection barrier to holes and facilitating the tunneling of carriers. The decrease of driving voltage with an increase of annealing time was obtained.
Original language | English |
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Title of host publication | IDW/AD'05 - Proceedings of the 12th International Display Workshops in Conjunction with Asia Display 2005 |
Pages | 741-744 |
Number of pages | 4 |
Edition | 1 |
Publication status | Published - 2005 |
Externally published | Yes |
Event | IDW/AD'05 - 12th International Display Workshops in Conjunction with Asia Display 2005 - Takamatsu, Japan Duration: Dec 6 2005 → Dec 9 2005 |
Other
Other | IDW/AD'05 - 12th International Display Workshops in Conjunction with Asia Display 2005 |
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Country/Territory | Japan |
City | Takamatsu |
Period | 12/6/05 → 12/9/05 |
All Science Journal Classification (ASJC) codes
- Engineering(all)