Abstract
ITO modification using heat treatment for low driving voltage of OLEDs is proposed. Annealing of a regular ITO layer at 250°C in a GB led to both structural and surface changes. As a result, ITO work function was decreased, reducing the injection barrier to holes and facilitating the tunneling of carriers. The decrease of driving voltage with an increase of annealing time was obtained.
| Original language | English |
|---|---|
| Title of host publication | IDW/AD'05 - Proceedings of the 12th International Display Workshops in Conjunction with Asia Display 2005 |
| Pages | 741-744 |
| Number of pages | 4 |
| Edition | 1 |
| Publication status | Published - 2005 |
| Externally published | Yes |
| Event | IDW/AD'05 - 12th International Display Workshops in Conjunction with Asia Display 2005 - Takamatsu, Japan Duration: Dec 6 2005 → Dec 9 2005 |
Other
| Other | IDW/AD'05 - 12th International Display Workshops in Conjunction with Asia Display 2005 |
|---|---|
| Country | Japan |
| City | Takamatsu |
| Period | 12/6/05 → 12/9/05 |
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All Science Journal Classification (ASJC) codes
- Engineering(all)
Cite this
Control of ITO characteristics by heat treatment in organic light emitting diodes. / Fenenko, L.; Adachi, Chihaya.
IDW/AD'05 - Proceedings of the 12th International Display Workshops in Conjunction with Asia Display 2005. 1. ed. 2005. p. 741-744.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - Control of ITO characteristics by heat treatment in organic light emitting diodes
AU - Fenenko, L.
AU - Adachi, Chihaya
PY - 2005
Y1 - 2005
N2 - ITO modification using heat treatment for low driving voltage of OLEDs is proposed. Annealing of a regular ITO layer at 250°C in a GB led to both structural and surface changes. As a result, ITO work function was decreased, reducing the injection barrier to holes and facilitating the tunneling of carriers. The decrease of driving voltage with an increase of annealing time was obtained.
AB - ITO modification using heat treatment for low driving voltage of OLEDs is proposed. Annealing of a regular ITO layer at 250°C in a GB led to both structural and surface changes. As a result, ITO work function was decreased, reducing the injection barrier to holes and facilitating the tunneling of carriers. The decrease of driving voltage with an increase of annealing time was obtained.
UR - http://www.scopus.com/inward/record.url?scp=33644604315&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=33644604315&partnerID=8YFLogxK
M3 - Conference contribution
AN - SCOPUS:33644604315
SP - 741
EP - 744
BT - IDW/AD'05 - Proceedings of the 12th International Display Workshops in Conjunction with Asia Display 2005
ER -