Abstract
ITO modification using heat treatment for low driving voltage of OLEDs is proposed. Annealing of a regular ITO layer at 250°C in a GB led to both structural and surface changes. As a result, ITO work function was decreased, reducing the injection barrier to holes and facilitating the tunneling of carriers. The decrease of driving voltage with an increase of annealing time was obtained.
| Original language | English |
|---|---|
| Title of host publication | IDW/AD'05 - Proceedings of the 12th International Display Workshops in Conjunction with Asia Display 2005 |
| Pages | 741-744 |
| Number of pages | 4 |
| Edition | 1 |
| Publication status | Published - 2005 |
| Externally published | Yes |
| Event | IDW/AD'05 - 12th International Display Workshops in Conjunction with Asia Display 2005 - Takamatsu, Japan Duration: Dec 6 2005 → Dec 9 2005 |
Other
| Other | IDW/AD'05 - 12th International Display Workshops in Conjunction with Asia Display 2005 |
|---|---|
| Country/Territory | Japan |
| City | Takamatsu |
| Period | 12/6/05 → 12/9/05 |
All Science Journal Classification (ASJC) codes
- Engineering(all)