Control of si solid phase nucleation by surface steps for high-performance thin-film transistors

Tanemasa Asano, Kenji Makihira

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

The solid phase nucleation process of amorphous Si (a-Si) deposited by vacuum evaporation on thermally grown Si02layers on Si substrates having steps has been investigated. Steps were formed by either isotropic wet chemical etching of the Si02layer or anisotropic wet chemical etching of Si(100) followed by thermal oxidation. It has been found that solid phase nucleation is enhanced at the steps and that nucleation sites can be controlled by changing the step shape and a-Si thickness. Grain growth up to about 3 µm from the step edge has been observed, n-channel MOSFET’s (metal-oxide-semiconductor field-effect-transistor’s) which had steps at the source/drain edge were fabricated. They showed channel electron mobility of about 200 cm2/V-s, which is approximately one order higher than that obtained from MOSFET’s fabricated in Si films formed by solid phase crystallization on flat Si02/Si substrates.

Original languageEnglish
Pages (from-to)482-485
Number of pages4
JournalJapanese Journal of Applied Physics
Volume32
Issue number1 S
DOIs
Publication statusPublished - Jan 1993

Fingerprint

Thin film transistors
solid phases
Nucleation
transistors
Wet etching
nucleation
MOSFET devices
thin films
Vacuum evaporation
Electron mobility
Substrates
Grain growth
metal oxide semiconductors
field effect transistors
Crystallization
etching
Oxidation
electron mobility
evaporation
crystallization

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)
  • Physics and Astronomy (miscellaneous)

Cite this

Control of si solid phase nucleation by surface steps for high-performance thin-film transistors. / Asano, Tanemasa; Makihira, Kenji.

In: Japanese Journal of Applied Physics, Vol. 32, No. 1 S, 01.1993, p. 482-485.

Research output: Contribution to journalArticle

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