Control of the charge transport properties in a solution-processible ambipolar quinoidal oligothiophene derivative by direct laser writing

Jean Charles Maurice Ribierre, T. Fujihara, T. Muto, T. Aoyama

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Abstract

We investigate the effects of laser irradiation on the performance of organic field-effect transistors based on the solution-processible quinoidal oligothiophene [QQT(CN)4]. Whereas electron field-effect mobilities are not modified, hole transport can be selectively controlled and even suppressed depending on the laser irradiation conditions. Vertical p-n bipolar structures in QQT(CN)4 realized by direct laser writing are also studied. The results provide essential information for the effective laser patterning of complementary organic logic circuits and suggests the possibility to fabricate by direct laser writing complex three-dimensional bipolar p-n structures in a single QQT(CN)4 thin film.

Original languageEnglish
Article number233302
JournalApplied Physics Letters
Volume96
Issue number23
DOIs
Publication statusPublished - Jun 18 2010

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All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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