Control of the charge transport properties in a solution-processible ambipolar quinoidal oligothiophene derivative by direct laser writing

J. C. Ribierre, T. Fujihara, T. Muto, T. Aoyama

    Research output: Contribution to journalArticlepeer-review

    11 Citations (Scopus)

    Abstract

    We investigate the effects of laser irradiation on the performance of organic field-effect transistors based on the solution-processible quinoidal oligothiophene [QQT(CN)4]. Whereas electron field-effect mobilities are not modified, hole transport can be selectively controlled and even suppressed depending on the laser irradiation conditions. Vertical p-n bipolar structures in QQT(CN)4 realized by direct laser writing are also studied. The results provide essential information for the effective laser patterning of complementary organic logic circuits and suggests the possibility to fabricate by direct laser writing complex three-dimensional bipolar p-n structures in a single QQT(CN)4 thin film.

    Original languageEnglish
    Article number233302
    JournalApplied Physics Letters
    Volume96
    Issue number23
    DOIs
    Publication statusPublished - 2010

    All Science Journal Classification (ASJC) codes

    • Physics and Astronomy (miscellaneous)

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