TY - JOUR
T1 - Control of the molecular orientation of a 2, 2′ -bithiophene-9,9- dioctylfluorene copolymer by laser annealing and subsequent enhancement of the field effect transistor characteristics
AU - Kubota, Korefumi
AU - Kato, Takuji
AU - Adachi, Chihaya
N1 - Funding Information:
This work was supported partly by a Grant-in-Aid for the global COE program, “Science for Future Molecular Systems” and a Grant-in-Aid for scientific research, Grant No. 20245046, from the Ministry of Education, Culture, Sports, and Technology of Japan. The authors thank Mr. Hiroshi Miura for his helpful support in carrying out the laser annealing. Finally, we acknowledge the Japan Synchrotron Radiation Research Institute for the x-ray diffraction measurements (Grant No. 2008B1947).
PY - 2009
Y1 - 2009
N2 - We controlled the orientation of a 2, 2′ -bithiophene-9,9- dioctylfluorene (F8T2) copolymer spin-coated film on a polycarbonate substrate using a laser-annealing technique and demonstrated an enhancement of the field-effect transistor characteristics. We used a semiconductor laser, having a lasing wavelength of λ=405 nm, with a small spot size of 400 nm. Using polarizing optical microscopy and x-ray diffraction analysis, we confirmed enhancement of the orientation of the molecular chains of F8T2, along the laser scanning direction. Following laser annealing, the field-effect hole mobility resulted in a value of μ=1.6× 10-3 cm2 /V s, which is about three times higher than that of the unannealed sample.
AB - We controlled the orientation of a 2, 2′ -bithiophene-9,9- dioctylfluorene (F8T2) copolymer spin-coated film on a polycarbonate substrate using a laser-annealing technique and demonstrated an enhancement of the field-effect transistor characteristics. We used a semiconductor laser, having a lasing wavelength of λ=405 nm, with a small spot size of 400 nm. Using polarizing optical microscopy and x-ray diffraction analysis, we confirmed enhancement of the orientation of the molecular chains of F8T2, along the laser scanning direction. Following laser annealing, the field-effect hole mobility resulted in a value of μ=1.6× 10-3 cm2 /V s, which is about three times higher than that of the unannealed sample.
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U2 - 10.1063/1.3211125
DO - 10.1063/1.3211125
M3 - Article
AN - SCOPUS:69249176170
SN - 0003-6951
VL - 95
JO - Applied Physics Letters
JF - Applied Physics Letters
IS - 7
M1 - 073303
ER -