TY - JOUR
T1 - Controllable III-V nanowire growth
T2 - Via catalyst epitaxy
AU - Han, Ning
AU - Wang, Ying
AU - Yang, Zai Xing
AU - Yip, Senpo
AU - Wang, Zhou
AU - Li, Dapan
AU - Hung, Tak Fu
AU - Wang, Fengyun
AU - Chen, Yunfa
AU - Ho, Johnny C.
N1 - Publisher Copyright:
© 2017 The Royal Society of Chemistry.
Copyright:
Copyright 2019 Elsevier B.V., All rights reserved.
PY - 2017
Y1 - 2017
N2 - Controllable synthesis of III-V compound semiconductor nanowires (NWs) with high crystallinity and uniformity is essential for their large-scale practical use in various technological applications, especially for those which are grown on non-crystalline substrates. In this study, the catalytic effect is investigated thoroughly in the growth of various III-V NWs in solid-source chemical vapor deposition, including Pd, Ag and Ni catalyzed GaAs NWs and Au catalyzed InGaAs and GaSb NWs. It is found that small diameter catalyst seeds lead to faster NW growth with better crystal quality, while large seeds result in slower NW growth with kinked morphology and twinning defects. Importantly, these small catalyst nanoparticles are observed to have higher solubility of the group III precursors due to the Gibbs-Thomson effect, which not only enables effective III precursor diffusion for a faster growth rate, but also yields epitaxial growth of NWs from the catalyst seeds accounting for the low activation energy and better crystallinity. All these results explicitly demonstrate the effectiveness of this catalyst solubility and epitaxy engineering for controlled III-V NW growth and indicate the potency for the reliable production of high-performance NWs for next-generation electronics.
AB - Controllable synthesis of III-V compound semiconductor nanowires (NWs) with high crystallinity and uniformity is essential for their large-scale practical use in various technological applications, especially for those which are grown on non-crystalline substrates. In this study, the catalytic effect is investigated thoroughly in the growth of various III-V NWs in solid-source chemical vapor deposition, including Pd, Ag and Ni catalyzed GaAs NWs and Au catalyzed InGaAs and GaSb NWs. It is found that small diameter catalyst seeds lead to faster NW growth with better crystal quality, while large seeds result in slower NW growth with kinked morphology and twinning defects. Importantly, these small catalyst nanoparticles are observed to have higher solubility of the group III precursors due to the Gibbs-Thomson effect, which not only enables effective III precursor diffusion for a faster growth rate, but also yields epitaxial growth of NWs from the catalyst seeds accounting for the low activation energy and better crystallinity. All these results explicitly demonstrate the effectiveness of this catalyst solubility and epitaxy engineering for controlled III-V NW growth and indicate the potency for the reliable production of high-performance NWs for next-generation electronics.
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U2 - 10.1039/c7tc00900c
DO - 10.1039/c7tc00900c
M3 - Article
AN - SCOPUS:85021662977
VL - 5
SP - 4393
EP - 4399
JO - Journal of Materials Chemistry C
JF - Journal of Materials Chemistry C
SN - 2050-7526
IS - 18
ER -