Controllable threshold voltage of a pentacene field-effect transistor based on a double-dielectric structure

Toan Thanh Dao, Toshinori Matsushima, Rainer Friedlein, Hideyuki Murata

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The authors report controllable threshold voltage (Vth) in a pentacene field-effect transistor based on a double-dielectric structure of poly(perfluoroalkenyl vinyl ether) (CYTOP) and SiO2. When a positive switching voltage is applied to the gate electrode of the transistor, electrons traverse through the pentacene and CYTOP layers and subsequently trapped at the CYTOP/SiO2 interface. The trapped electrons induce accumulation of additional holes in the pentacene conducting channel, resulting in a large Vth shift from -4.4 to +4.6 V. By applying a negative switching voltage, the trapped electrons are removed from the CYTOP/SiO2 interface, resulting in Vth returning to an initial value. The V th shift caused by this floating gate-like effect is reversible and very time-stable allowing the transistor to be applicable to a nonvolatile memory that has excellent retention stability of stored data.

Original languageEnglish
Pages (from-to)2007-2013
Number of pages7
JournalOrganic Electronics
Issue number8
Publication statusPublished - Jan 1 2013
Externally publishedYes


All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Biomaterials
  • Chemistry(all)
  • Condensed Matter Physics
  • Materials Chemistry
  • Electrical and Electronic Engineering

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