The authors report controllable threshold voltage (Vth) in a pentacene field-effect transistor based on a double-dielectric structure of poly(perfluoroalkenyl vinyl ether) (CYTOP) and SiO2. When a positive switching voltage is applied to the gate electrode of the transistor, electrons traverse through the pentacene and CYTOP layers and subsequently trapped at the CYTOP/SiO2 interface. The trapped electrons induce accumulation of additional holes in the pentacene conducting channel, resulting in a large Vth shift from -4.4 to +4.6 V. By applying a negative switching voltage, the trapped electrons are removed from the CYTOP/SiO2 interface, resulting in Vth returning to an initial value. The V th shift caused by this floating gate-like effect is reversible and very time-stable allowing the transistor to be applicable to a nonvolatile memory that has excellent retention stability of stored data.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Materials Chemistry
- Electrical and Electronic Engineering