TY - JOUR
T1 - Controllable threshold voltage of a pentacene field-effect transistor based on a double-dielectric structure
AU - Dao, Toan Thanh
AU - Matsushima, Toshinori
AU - Friedlein, Rainer
AU - Murata, Hideyuki
N1 - Funding Information:
This work was partially supported by a Grant-in-Aid (Grant No. 20241034 ) and Scientific Research on Innovative Areas “pi-Space” (Grant No. 20108012 ) from the Ministry of Education, Culture, Sports, Science, and Technology, Japan .
PY - 2013
Y1 - 2013
N2 - The authors report controllable threshold voltage (Vth) in a pentacene field-effect transistor based on a double-dielectric structure of poly(perfluoroalkenyl vinyl ether) (CYTOP) and SiO2. When a positive switching voltage is applied to the gate electrode of the transistor, electrons traverse through the pentacene and CYTOP layers and subsequently trapped at the CYTOP/SiO2 interface. The trapped electrons induce accumulation of additional holes in the pentacene conducting channel, resulting in a large Vth shift from -4.4 to +4.6 V. By applying a negative switching voltage, the trapped electrons are removed from the CYTOP/SiO2 interface, resulting in Vth returning to an initial value. The V th shift caused by this floating gate-like effect is reversible and very time-stable allowing the transistor to be applicable to a nonvolatile memory that has excellent retention stability of stored data.
AB - The authors report controllable threshold voltage (Vth) in a pentacene field-effect transistor based on a double-dielectric structure of poly(perfluoroalkenyl vinyl ether) (CYTOP) and SiO2. When a positive switching voltage is applied to the gate electrode of the transistor, electrons traverse through the pentacene and CYTOP layers and subsequently trapped at the CYTOP/SiO2 interface. The trapped electrons induce accumulation of additional holes in the pentacene conducting channel, resulting in a large Vth shift from -4.4 to +4.6 V. By applying a negative switching voltage, the trapped electrons are removed from the CYTOP/SiO2 interface, resulting in Vth returning to an initial value. The V th shift caused by this floating gate-like effect is reversible and very time-stable allowing the transistor to be applicable to a nonvolatile memory that has excellent retention stability of stored data.
UR - http://www.scopus.com/inward/record.url?scp=84878245347&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84878245347&partnerID=8YFLogxK
U2 - 10.1016/j.orgel.2013.04.045
DO - 10.1016/j.orgel.2013.04.045
M3 - Article
AN - SCOPUS:84878245347
SN - 1566-1199
VL - 14
SP - 2007
EP - 2013
JO - Organic Electronics: physics, materials, applications
JF - Organic Electronics: physics, materials, applications
IS - 8
ER -