Controlled generation of atomic vacancies in chemical vapor deposited graphene by microwave oxygen plasma

R. Rozada, P. Solís-Fernández, J. I. Paredes, A. Martínez-Alonso, H. Ago, J. M.D. Tascón

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    Abstract

    The introduction of atomic-scale defects in a controllable manner and the understanding of their effect on the characteristics of graphene are essential to develop many applications based on this two-dimensional material. Here, we investigate the use of microwaveinduced oxygen plasma towards the generation of small-sized atomic vacancies (holes) in graphene grown by chemical vapor deposition. Scanning tunneling microscopy revealed that tunable vacancy densities in the 103-105 μm-2 range could be attained with proper plasma parameters. Transport measurements and Raman spectroscopy revealed p-type doping and a decrease in charge carrier mobility for the vacancy-decorated samples. This plasma-modified graphene could find use in, e.g., gas or liquid separation, or molecular sensing.

    Original languageEnglish
    Pages (from-to)664-669
    Number of pages6
    JournalCarbon
    Volume79
    Issue number1
    DOIs
    Publication statusPublished - Jan 1 2014

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    All Science Journal Classification (ASJC) codes

    • Chemistry(all)
    • Materials Science(all)

    Cite this

    Rozada, R., Solís-Fernández, P., Paredes, J. I., Martínez-Alonso, A., Ago, H., & Tascón, J. M. D. (2014). Controlled generation of atomic vacancies in chemical vapor deposited graphene by microwave oxygen plasma. Carbon, 79(1), 664-669. https://doi.org/10.1016/j.carbon.2014.08.015