Controlled generation of atomic vacancies in chemical vapor deposited graphene by microwave oxygen plasma

R. Rozada; P. Solís-Fernández; J. I. Paredes; A. Martínez-Alonso; H. Ago; J. M.D. Tascón

doi:10.1016/j.carbon.2014.08.015

Controlled generation of atomic vacancies in chemical vapor deposited graphene by microwave oxygen plasma

R. Rozada, P. Solís-Fernández, J. I. Paredes, A. Martínez-Alonso, H. Ago, J. M.D. Tascón

Advanced Project Division

Research output: Contribution to journal › Letter › peer-review

25 Citations (Scopus)

Abstract

The introduction of atomic-scale defects in a controllable manner and the understanding of their effect on the characteristics of graphene are essential to develop many applications based on this two-dimensional material. Here, we investigate the use of microwaveinduced oxygen plasma towards the generation of small-sized atomic vacancies (holes) in graphene grown by chemical vapor deposition. Scanning tunneling microscopy revealed that tunable vacancy densities in the 10³-10⁵ μm^-2 range could be attained with proper plasma parameters. Transport measurements and Raman spectroscopy revealed p-type doping and a decrease in charge carrier mobility for the vacancy-decorated samples. This plasma-modified graphene could find use in, e.g., gas or liquid separation, or molecular sensing.

Original language	English
Pages (from-to)	664-669
Number of pages	6
Journal	Carbon
Volume	79
Issue number	1
DOIs	https://doi.org/10.1016/j.carbon.2014.08.015
Publication status	Published - 2014

All Science Journal Classification (ASJC) codes

Chemistry(all)
Materials Science(all)

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10.1016/j.carbon.2014.08.015

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title = "Controlled generation of atomic vacancies in chemical vapor deposited graphene by microwave oxygen plasma",

abstract = "The introduction of atomic-scale defects in a controllable manner and the understanding of their effect on the characteristics of graphene are essential to develop many applications based on this two-dimensional material. Here, we investigate the use of microwaveinduced oxygen plasma towards the generation of small-sized atomic vacancies (holes) in graphene grown by chemical vapor deposition. Scanning tunneling microscopy revealed that tunable vacancy densities in the 103-105 μm-2 range could be attained with proper plasma parameters. Transport measurements and Raman spectroscopy revealed p-type doping and a decrease in charge carrier mobility for the vacancy-decorated samples. This plasma-modified graphene could find use in, e.g., gas or liquid separation, or molecular sensing.",

author = "R. Rozada and P. Sol{\'i}s-Fern{\'a}ndez and Paredes, {J. I.} and A. Mart{\'i}nez-Alonso and H. Ago and Tasc{\'o}n, {J. M.D.}",

note = "Funding Information: Financial support from the Spanish MINECO and the European Regional Development Fund (project MAT2011-26399 ) is gratefully acknowledged. Part of this work was supported by PRESTO, Japan Science and Technology. P.S.-F- acknowledges the receipt of a postdoctoral fellowship from JSPS. R.R. is grateful for the receipt of a pre-doctoral contract (FPU) from the Spanish MECD. Publisher Copyright: {\textcopyright} 2014 Elsevier Ltd. All rights reserved.",

year = "2014",

doi = "10.1016/j.carbon.2014.08.015",

language = "English",

volume = "79",

pages = "664--669",

journal = "Carbon",

issn = "0008-6223",

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T1 - Controlled generation of atomic vacancies in chemical vapor deposited graphene by microwave oxygen plasma

AU - Rozada, R.

AU - Solís-Fernández, P.

AU - Paredes, J. I.

AU - Martínez-Alonso, A.

AU - Ago, H.

AU - Tascón, J. M.D.

N1 - Funding Information: Financial support from the Spanish MINECO and the European Regional Development Fund (project MAT2011-26399 ) is gratefully acknowledged. Part of this work was supported by PRESTO, Japan Science and Technology. P.S.-F- acknowledges the receipt of a postdoctoral fellowship from JSPS. R.R. is grateful for the receipt of a pre-doctoral contract (FPU) from the Spanish MECD. Publisher Copyright: © 2014 Elsevier Ltd. All rights reserved.

PY - 2014

Y1 - 2014

N2 - The introduction of atomic-scale defects in a controllable manner and the understanding of their effect on the characteristics of graphene are essential to develop many applications based on this two-dimensional material. Here, we investigate the use of microwaveinduced oxygen plasma towards the generation of small-sized atomic vacancies (holes) in graphene grown by chemical vapor deposition. Scanning tunneling microscopy revealed that tunable vacancy densities in the 103-105 μm-2 range could be attained with proper plasma parameters. Transport measurements and Raman spectroscopy revealed p-type doping and a decrease in charge carrier mobility for the vacancy-decorated samples. This plasma-modified graphene could find use in, e.g., gas or liquid separation, or molecular sensing.

AB - The introduction of atomic-scale defects in a controllable manner and the understanding of their effect on the characteristics of graphene are essential to develop many applications based on this two-dimensional material. Here, we investigate the use of microwaveinduced oxygen plasma towards the generation of small-sized atomic vacancies (holes) in graphene grown by chemical vapor deposition. Scanning tunneling microscopy revealed that tunable vacancy densities in the 103-105 μm-2 range could be attained with proper plasma parameters. Transport measurements and Raman spectroscopy revealed p-type doping and a decrease in charge carrier mobility for the vacancy-decorated samples. This plasma-modified graphene could find use in, e.g., gas or liquid separation, or molecular sensing.

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SP - 664

EP - 669

JO - Carbon

JF - Carbon

IS - 1

ER -

Controlled generation of atomic vacancies in chemical vapor deposited graphene by microwave oxygen plasma

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