Controlled generation of atomic vacancies in chemical vapor deposited graphene by microwave oxygen plasma

R. Rozada, P. Solís-Fernández, J. I. Paredes, A. Martínez-Alonso, Hiroki Ago, J. M.D. Tascón

    Research output: Contribution to journalLetter

    17 Citations (Scopus)

    Abstract

    The introduction of atomic-scale defects in a controllable manner and the understanding of their effect on the characteristics of graphene are essential to develop many applications based on this two-dimensional material. Here, we investigate the use of microwaveinduced oxygen plasma towards the generation of small-sized atomic vacancies (holes) in graphene grown by chemical vapor deposition. Scanning tunneling microscopy revealed that tunable vacancy densities in the 103-105 μm-2 range could be attained with proper plasma parameters. Transport measurements and Raman spectroscopy revealed p-type doping and a decrease in charge carrier mobility for the vacancy-decorated samples. This plasma-modified graphene could find use in, e.g., gas or liquid separation, or molecular sensing.

    Original languageEnglish
    Pages (from-to)664-669
    Number of pages6
    JournalCarbon
    Volume79
    Issue number1
    DOIs
    Publication statusPublished - Jan 1 2014

    Fingerprint

    Graphite
    Graphene
    Vacancies
    Vapors
    Microwaves
    Oxygen
    Plasmas
    Carrier mobility
    Scanning tunneling microscopy
    Charge carriers
    Raman spectroscopy
    Chemical vapor deposition
    Gases
    Doping (additives)
    Defects
    Liquids

    All Science Journal Classification (ASJC) codes

    • Chemistry(all)
    • Materials Science(all)

    Cite this

    Rozada, R., Solís-Fernández, P., Paredes, J. I., Martínez-Alonso, A., Ago, H., & Tascón, J. M. D. (2014). Controlled generation of atomic vacancies in chemical vapor deposited graphene by microwave oxygen plasma. Carbon, 79(1), 664-669. https://doi.org/10.1016/j.carbon.2014.08.015

    Controlled generation of atomic vacancies in chemical vapor deposited graphene by microwave oxygen plasma. / Rozada, R.; Solís-Fernández, P.; Paredes, J. I.; Martínez-Alonso, A.; Ago, Hiroki; Tascón, J. M.D.

    In: Carbon, Vol. 79, No. 1, 01.01.2014, p. 664-669.

    Research output: Contribution to journalLetter

    Rozada, R, Solís-Fernández, P, Paredes, JI, Martínez-Alonso, A, Ago, H & Tascón, JMD 2014, 'Controlled generation of atomic vacancies in chemical vapor deposited graphene by microwave oxygen plasma', Carbon, vol. 79, no. 1, pp. 664-669. https://doi.org/10.1016/j.carbon.2014.08.015
    Rozada, R. ; Solís-Fernández, P. ; Paredes, J. I. ; Martínez-Alonso, A. ; Ago, Hiroki ; Tascón, J. M.D. / Controlled generation of atomic vacancies in chemical vapor deposited graphene by microwave oxygen plasma. In: Carbon. 2014 ; Vol. 79, No. 1. pp. 664-669.
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