Controlled growth of ZnO nanowires by nanoparticle-assisted laser ablation deposition

T. Okada, R. Guo, J. Nishimura, M. Matsumoto, M. Higashihata, Daisuke Nakamura

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Vertically aligned ZnO nanowires have been successfully synthesized on c-cut sapphire substrates by a catalyst-free nanoparticle-assisted pulsed-laser ablation deposition (NAPLD) in Ar and N2 background gases. In NAPLD, the nanoparticles formed in a background gas by laser ablation are used as a starting material for the growth of the nanowires. The surface density of the nanowires can be controlled by varying the density of nanoparticles, which are accomplished by changing the energy of the ablation laser, the repetition rate of the laser and so on. When single ZnO nanowire synthesized in a N2 background gas was excited by 355 nm laser-pulse with a pulse-width of 8 ns, stimulated emission was clearly observed, indicating high quality of the nanowire. These nanowires were used as building blocks for an ultraviolet light emitting diode with a structure of n-ZnO/ZnO nanowire/p-GaN.

Original languageEnglish
Title of host publicationZinc Oxide Materials and Devices III
Volume6895
DOIs
Publication statusPublished - Apr 23 2008
EventZinc Oxide Materials and Devices III - San Jose, CA, United States
Duration: Jan 20 2008Jan 23 2008

Other

OtherZinc Oxide Materials and Devices III
CountryUnited States
CitySan Jose, CA
Period1/20/081/23/08

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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  • Cite this

    Okada, T., Guo, R., Nishimura, J., Matsumoto, M., Higashihata, M., & Nakamura, D. (2008). Controlled growth of ZnO nanowires by nanoparticle-assisted laser ablation deposition. In Zinc Oxide Materials and Devices III (Vol. 6895). [68950S] https://doi.org/10.1117/12.760922