Controlled nanoscale doping of semiconductors via molecular monolayers

Johnny C. Ho, Roie Yerushalmi, Zachery A. Jacobson, Zhiyong Fan, Robert L. Alley, Ali Javey

Research output: Contribution to journalArticlepeer-review

Abstract

One of the major challenges towards scaling electronic devices to the nanometre-size regime is attaining controlled doping of semiconductor materials with atomic accuracy, as at such small scales, the various existing technologies suffer from a number of setbacks. Here, we present a novel strategy for controlled, nanoscale doping of semiconductor materials by taking advantage of the crystalline nature of silicon and its rich, self-limiting surface reaction properties. Our method relies on the formation of a highly uniform and covalently bonded monolayer of dopant-containing molecules, which enables deterministic positioning of dopant atoms on the Si surfaces. In a subsequent annealing step, the dopant atoms are diffused into the Si lattice to attain the desired doping profile. We show the versatility of our approach through controlled p- and n-doping of a wide range of semiconductor materials, including ultrathin silicon-on-insulator substrates and nanowires, which are then configured into novel transistor structures.

Original languageEnglish
Pages (from-to)62-67
Number of pages6
JournalNature Materials
Volume7
Issue number1
DOIs
Publication statusPublished - Jan 2008
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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