Abstract
Discussed are the experimental and numerical studies on nucleation and erasing of sub-μm2 domains in spin valve strips, which are essential operations in a high density magnetic random access memory (MRAM) and important for design consideration of a device structure. The device fabricated based on these studies is also described.
Original language | English |
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Pages (from-to) | HA-01 |
Journal | Digests of the Intermag Conference |
Publication status | Published - Dec 1 1999 |
Event | Proceedings of the 1999 IEEE International Magnetics Conference 'Digest of Intermag 99' - Kyongju, South Korea Duration: May 18 1999 → May 21 1999 |
All Science Journal Classification (ASJC) codes
- Electrical and Electronic Engineering