Controlling of sub-μm2 domain in spin valve strip with conductor current

K. Matsuyama, H. Hosokawa, Y. Nozaki

Research output: Contribution to journal › Conference article

Abstract

Discussed are the experimental and numerical studies on nucleation and erasing of sub-μm2 domains in spin valve strips, which are essential operations in a high density magnetic random access memory (MRAM) and important for design consideration of a device structure. The device fabricated based on these studies is also described.

Original languageEnglish
Pages (from-to)HA-01
JournalDigests of the Intermag Conference
Publication statusPublished - Dec 1 1999
EventProceedings of the 1999 IEEE International Magnetics Conference 'Digest of Intermag 99' - Kyongju, South Korea
Duration: May 18 1999 → May 21 1999

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nucleation
Nucleation
Data storage equipment

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

Cite this

Controlling of sub-μm2 domain in spin valve strip with conductor current. / Matsuyama, K.; Hosokawa, H.; Nozaki, Y.

In: Digests of the Intermag Conference, 01.12.1999, p. HA-01.

Research output: Contribution to journal › Conference article

Matsuyama, K, Hosokawa, H & Nozaki, Y 1999, 'Controlling of sub-μm2 domain in spin valve strip with conductor current', Digests of the Intermag Conference, pp. HA-01.
Matsuyama K, Hosokawa H, Nozaki Y. Controlling of sub-μm2 domain in spin valve strip with conductor current. Digests of the Intermag Conference. 1999 Dec 1;HA-01.
Matsuyama, K. ; Hosokawa, H. ; Nozaki, Y. / Controlling of sub-μm2 domain in spin valve strip with conductor current. In: Digests of the Intermag Conference. 1999 ; pp. HA-01.
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