Controlling of sub-μm2 domains in spin valve strips with conductor current

Kimihide Matsuyama, H. Hosokawa, Y. Nozaki

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

Nucleation and erasing of sub-μm2 domains in spin valve strips have been performed with current pulses applied through conductors. A spin valve material of NiFe/Co/Cu/Co was deposited by magnetron sputtering and patterned into sense lines of 40 parallel strips with 0.4 μm width and 2 μm pitch. Selective domain nucleation under parallel conductors with l μm width and 2.6 μm pitch has been confirmed by the current induced MR change. Pulses with opposite polarity performed erasing of nucleated domains. Reproducible MR change with a variation of ±10 % relative to the mid value was realized in 104 operations of the domain nucleation process.

Original languageEnglish
Pages (from-to)2826-2828
Number of pages3
JournalIEEE Transactions on Magnetics
Volume35
Issue number5 PART 1
DOIs
Publication statusPublished - Dec 1 1999

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Nucleation
Induced currents
Magnetron sputtering

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

Controlling of sub-μm2 domains in spin valve strips with conductor current. / Matsuyama, Kimihide; Hosokawa, H.; Nozaki, Y.

In: IEEE Transactions on Magnetics, Vol. 35, No. 5 PART 1, 01.12.1999, p. 2826-2828.

Research output: Contribution to journalArticle

Matsuyama, Kimihide ; Hosokawa, H. ; Nozaki, Y. / Controlling of sub-μm2 domains in spin valve strips with conductor current. In: IEEE Transactions on Magnetics. 1999 ; Vol. 35, No. 5 PART 1. pp. 2826-2828.
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