Controlling the nucleation site and crystal orientation during eximer-laser annealing processes in thin amorphous Si films on glass: A molecular-dynamics study

T. Motooka, S. Munetoh, R. Kishikawa, T. Mitani, T. Ogata

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    Abstract

    We propose a new technique to control the nucleation site and crystal orientation for obtaining large poly-Si grains with the (001) surface during eximer-laser annealing processes of amorphous Si films on glass based on molecular dynamics (MD) simulations. Preferential nucleation sites of supercooled melted Si can be controlled at the top parts of nano-scale reverse-pyramidal pits on glass by setting a proper temperature-gradient in the vertical direction of the glass substrate. MD simulations indicate that the nano-structured glass surface must be modified as a chemically inactive wall to melted Si, otherwise a large interfacial energy between Si and SiO2 prevents nucleation at the pyramidal interface where the Si(111) surface is generated. It is also found that {111} stacking faults are sometimes formed. We suggest that this {111} stacking fault formation can be avoided by utilizing low-temperature solid-phase-epitaxial growth of Si where crystallization tends to proceed along the amorphous/crystal Si(001) interface.

    Original languageEnglish
    Title of host publicationECS Transactions - 2007 International Conference on Semiconductor Technology for Ultra Large Scale Integrated Circuits and Thin Film Transistors, ULSIC vs.TFT
    Pages191-196
    Number of pages6
    Edition1
    DOIs
    Publication statusPublished - Dec 1 2007
    Event2007 International Conference on SemiconductorTechnology for Ultra Large Scale Integrated Circuits and Thin Film Transistors, ULSIC vs. TFT - Barga, Italy
    Duration: Jul 29 2007Aug 3 2007

    Publication series

    NameECS Transactions
    Number1
    Volume8
    ISSN (Print)1938-5862
    ISSN (Electronic)1938-6737

    Other

    Other2007 International Conference on SemiconductorTechnology for Ultra Large Scale Integrated Circuits and Thin Film Transistors, ULSIC vs. TFT
    CountryItaly
    CityBarga
    Period7/29/078/3/07

    All Science Journal Classification (ASJC) codes

    • Engineering(all)

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