Controlling the nucleation site and crystal orientation during eximer-laser annealing processes in thin amorphous Si films on glass

A molecular-dynamics study

T. Motooka, Shinji Munetoh, R. Kishikawa, T. Mitani, T. Ogata

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We propose a new technique to control the nucleation site and crystal orientation for obtaining large poly-Si grains with the (001) surface during eximer-laser annealing processes of amorphous Si films on glass based on molecular dynamics (MD) simulations. Preferential nucleation sites of supercooled melted Si can be controlled at the top parts of nano-scale reverse-pyramidal pits on glass by setting a proper temperature-gradient in the vertical direction of the glass substrate. MD simulations indicate that the nano-structured glass surface must be modified as a chemically inactive wall to melted Si, otherwise a large interfacial energy between Si and SiO2 prevents nucleation at the pyramidal interface where the Si(111) surface is generated. It is also found that {111} stacking faults are sometimes formed. We suggest that this {111} stacking fault formation can be avoided by utilizing low-temperature solid-phase-epitaxial growth of Si where crystallization tends to proceed along the amorphous/crystal Si(001) interface.

Original languageEnglish
Title of host publicationECS Transactions - 2007 International Conference on Semiconductor Technology for Ultra Large Scale Integrated Circuits and Thin Film Transistors, ULSIC vs.TFT
Pages191-196
Number of pages6
Edition1
DOIs
Publication statusPublished - Dec 1 2007
Event2007 International Conference on SemiconductorTechnology for Ultra Large Scale Integrated Circuits and Thin Film Transistors, ULSIC vs. TFT - Barga, Italy
Duration: Jul 29 2007Aug 3 2007

Publication series

NameECS Transactions
Number1
Volume8
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

Other2007 International Conference on SemiconductorTechnology for Ultra Large Scale Integrated Circuits and Thin Film Transistors, ULSIC vs. TFT
CountryItaly
CityBarga
Period7/29/078/3/07

Fingerprint

Crystal orientation
Molecular dynamics
Nucleation
Annealing
Glass
Lasers
Stacking faults
Computer simulation
Epitaxial growth
Interfacial energy
Polysilicon
Thermal gradients
Crystallization
Crystals
Substrates
Temperature

All Science Journal Classification (ASJC) codes

  • Engineering(all)

Cite this

Motooka, T., Munetoh, S., Kishikawa, R., Mitani, T., & Ogata, T. (2007). Controlling the nucleation site and crystal orientation during eximer-laser annealing processes in thin amorphous Si films on glass: A molecular-dynamics study. In ECS Transactions - 2007 International Conference on Semiconductor Technology for Ultra Large Scale Integrated Circuits and Thin Film Transistors, ULSIC vs.TFT (1 ed., pp. 191-196). (ECS Transactions; Vol. 8, No. 1). https://doi.org/10.1149/1.2767307

Controlling the nucleation site and crystal orientation during eximer-laser annealing processes in thin amorphous Si films on glass : A molecular-dynamics study. / Motooka, T.; Munetoh, Shinji; Kishikawa, R.; Mitani, T.; Ogata, T.

ECS Transactions - 2007 International Conference on Semiconductor Technology for Ultra Large Scale Integrated Circuits and Thin Film Transistors, ULSIC vs.TFT. 1. ed. 2007. p. 191-196 (ECS Transactions; Vol. 8, No. 1).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Motooka, T, Munetoh, S, Kishikawa, R, Mitani, T & Ogata, T 2007, Controlling the nucleation site and crystal orientation during eximer-laser annealing processes in thin amorphous Si films on glass: A molecular-dynamics study. in ECS Transactions - 2007 International Conference on Semiconductor Technology for Ultra Large Scale Integrated Circuits and Thin Film Transistors, ULSIC vs.TFT. 1 edn, ECS Transactions, no. 1, vol. 8, pp. 191-196, 2007 International Conference on SemiconductorTechnology for Ultra Large Scale Integrated Circuits and Thin Film Transistors, ULSIC vs. TFT, Barga, Italy, 7/29/07. https://doi.org/10.1149/1.2767307
Motooka T, Munetoh S, Kishikawa R, Mitani T, Ogata T. Controlling the nucleation site and crystal orientation during eximer-laser annealing processes in thin amorphous Si films on glass: A molecular-dynamics study. In ECS Transactions - 2007 International Conference on Semiconductor Technology for Ultra Large Scale Integrated Circuits and Thin Film Transistors, ULSIC vs.TFT. 1 ed. 2007. p. 191-196. (ECS Transactions; 1). https://doi.org/10.1149/1.2767307
Motooka, T. ; Munetoh, Shinji ; Kishikawa, R. ; Mitani, T. ; Ogata, T. / Controlling the nucleation site and crystal orientation during eximer-laser annealing processes in thin amorphous Si films on glass : A molecular-dynamics study. ECS Transactions - 2007 International Conference on Semiconductor Technology for Ultra Large Scale Integrated Circuits and Thin Film Transistors, ULSIC vs.TFT. 1. ed. 2007. pp. 191-196 (ECS Transactions; 1).
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