Convergent-Beam Electron Diffraction for Local Lattice Parameters in III-V Semiconductors

Y. Tomokiyo, T. Okuyama, Syo Matsumura, N. Kuwano, K. Oki

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

We have examined the feasibility of the kinematical approximation in determination of absolute values for local lattice parameter from higher-order Laue zone (HOLZ) lines. HOLZ lines of convergent-beam electron diffraction (CBED) were observed under [111] zone axis incidence for Si, III-V compound and alloy semiconductors. The observed line positions are analysed through calculations based on the kinematical and dynamical theories of electron diffraction. In order to compensate for systematic shifts of HOLZ lines caused by the effect of dynamical diffraction, we should use in the kinematical simulation an effective accelerating voltage Ee, instead of an actual one Ea. A reference specimen with a known lattice parameter and composition is necessary for estimation of the effective voltage which depends on the species and composition of materials through the strength of projected crystal potential. It is shown that the effective voltage varies gradually with the composition for III-V semiconductors. The kinematical treatment was applied to ternary alloy semiconductors of Ga0.975In0.025Sb and Ga0.45Al0.55Sb to determine the absolute lattice parameters. It is also shown that the kinematical approximation for the simulation of HOLZ lines is adequate to the routine work and a high accuracy of lattice parameter can be obtained provided a proper reference crystal is used. For III-V alloy semiconductors, compound semiconductors of their end members are useful as a reference and an attainable accuracy of lattice parameter is about 0.1% or better.

Original languageEnglish
Pages (from-to)641-646
Number of pages6
JournalMaterials Transactions, JIM
Volume31
Issue number7
DOIs
Publication statusPublished - Jan 1 1990

Fingerprint

Electron diffraction
Lattice constants
lattice parameters
electron diffraction
Semiconductor materials
Electric potential
electric potential
Chemical analysis
Crystals
Ternary alloys
ternary alloys
approximation
crystals
simulation
incidence
Diffraction
III-V semiconductors
shift
diffraction

All Science Journal Classification (ASJC) codes

  • Engineering(all)

Cite this

Convergent-Beam Electron Diffraction for Local Lattice Parameters in III-V Semiconductors. / Tomokiyo, Y.; Okuyama, T.; Matsumura, Syo; Kuwano, N.; Oki, K.

In: Materials Transactions, JIM, Vol. 31, No. 7, 01.01.1990, p. 641-646.

Research output: Contribution to journalArticle

Tomokiyo, Y. ; Okuyama, T. ; Matsumura, Syo ; Kuwano, N. ; Oki, K. / Convergent-Beam Electron Diffraction for Local Lattice Parameters in III-V Semiconductors. In: Materials Transactions, JIM. 1990 ; Vol. 31, No. 7. pp. 641-646.
@article{e5493ba06dc94d65b5a88f3180135135,
title = "Convergent-Beam Electron Diffraction for Local Lattice Parameters in III-V Semiconductors",
abstract = "We have examined the feasibility of the kinematical approximation in determination of absolute values for local lattice parameter from higher-order Laue zone (HOLZ) lines. HOLZ lines of convergent-beam electron diffraction (CBED) were observed under [111] zone axis incidence for Si, III-V compound and alloy semiconductors. The observed line positions are analysed through calculations based on the kinematical and dynamical theories of electron diffraction. In order to compensate for systematic shifts of HOLZ lines caused by the effect of dynamical diffraction, we should use in the kinematical simulation an effective accelerating voltage Ee, instead of an actual one Ea. A reference specimen with a known lattice parameter and composition is necessary for estimation of the effective voltage which depends on the species and composition of materials through the strength of projected crystal potential. It is shown that the effective voltage varies gradually with the composition for III-V semiconductors. The kinematical treatment was applied to ternary alloy semiconductors of Ga0.975In0.025Sb and Ga0.45Al0.55Sb to determine the absolute lattice parameters. It is also shown that the kinematical approximation for the simulation of HOLZ lines is adequate to the routine work and a high accuracy of lattice parameter can be obtained provided a proper reference crystal is used. For III-V alloy semiconductors, compound semiconductors of their end members are useful as a reference and an attainable accuracy of lattice parameter is about 0.1{\%} or better.",
author = "Y. Tomokiyo and T. Okuyama and Syo Matsumura and N. Kuwano and K. Oki",
year = "1990",
month = "1",
day = "1",
doi = "10.2320/matertrans1989.31.641",
language = "English",
volume = "31",
pages = "641--646",
journal = "Materials Transactions",
issn = "0916-1821",
publisher = "The Japan Institute of Metals and Materials",
number = "7",

}

TY - JOUR

T1 - Convergent-Beam Electron Diffraction for Local Lattice Parameters in III-V Semiconductors

AU - Tomokiyo, Y.

AU - Okuyama, T.

AU - Matsumura, Syo

AU - Kuwano, N.

AU - Oki, K.

PY - 1990/1/1

Y1 - 1990/1/1

N2 - We have examined the feasibility of the kinematical approximation in determination of absolute values for local lattice parameter from higher-order Laue zone (HOLZ) lines. HOLZ lines of convergent-beam electron diffraction (CBED) were observed under [111] zone axis incidence for Si, III-V compound and alloy semiconductors. The observed line positions are analysed through calculations based on the kinematical and dynamical theories of electron diffraction. In order to compensate for systematic shifts of HOLZ lines caused by the effect of dynamical diffraction, we should use in the kinematical simulation an effective accelerating voltage Ee, instead of an actual one Ea. A reference specimen with a known lattice parameter and composition is necessary for estimation of the effective voltage which depends on the species and composition of materials through the strength of projected crystal potential. It is shown that the effective voltage varies gradually with the composition for III-V semiconductors. The kinematical treatment was applied to ternary alloy semiconductors of Ga0.975In0.025Sb and Ga0.45Al0.55Sb to determine the absolute lattice parameters. It is also shown that the kinematical approximation for the simulation of HOLZ lines is adequate to the routine work and a high accuracy of lattice parameter can be obtained provided a proper reference crystal is used. For III-V alloy semiconductors, compound semiconductors of their end members are useful as a reference and an attainable accuracy of lattice parameter is about 0.1% or better.

AB - We have examined the feasibility of the kinematical approximation in determination of absolute values for local lattice parameter from higher-order Laue zone (HOLZ) lines. HOLZ lines of convergent-beam electron diffraction (CBED) were observed under [111] zone axis incidence for Si, III-V compound and alloy semiconductors. The observed line positions are analysed through calculations based on the kinematical and dynamical theories of electron diffraction. In order to compensate for systematic shifts of HOLZ lines caused by the effect of dynamical diffraction, we should use in the kinematical simulation an effective accelerating voltage Ee, instead of an actual one Ea. A reference specimen with a known lattice parameter and composition is necessary for estimation of the effective voltage which depends on the species and composition of materials through the strength of projected crystal potential. It is shown that the effective voltage varies gradually with the composition for III-V semiconductors. The kinematical treatment was applied to ternary alloy semiconductors of Ga0.975In0.025Sb and Ga0.45Al0.55Sb to determine the absolute lattice parameters. It is also shown that the kinematical approximation for the simulation of HOLZ lines is adequate to the routine work and a high accuracy of lattice parameter can be obtained provided a proper reference crystal is used. For III-V alloy semiconductors, compound semiconductors of their end members are useful as a reference and an attainable accuracy of lattice parameter is about 0.1% or better.

UR - http://www.scopus.com/inward/record.url?scp=0025456137&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0025456137&partnerID=8YFLogxK

U2 - 10.2320/matertrans1989.31.641

DO - 10.2320/matertrans1989.31.641

M3 - Article

AN - SCOPUS:0025456137

VL - 31

SP - 641

EP - 646

JO - Materials Transactions

JF - Materials Transactions

SN - 0916-1821

IS - 7

ER -