Cooling mechanism and structural change of local regions with a different cooling rate of excimer laser annealed Si

Byoung Min Lee, Baek Seok Seong, Hak Rho Kim, Shinji Munetoh, Teruaki Motooka

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

To investigate the cooling mechanism and the local structural changes of excimer laser-annealed silicon (Si), molecular dynamics (MD) simulations were performed. Heat flow of molten Si showed a strong dependency of the local region during a natural cooling. An amorphous-to-liquid transition near an interface in the temperature range of 1600 K ∼ 1800 K was expected with the results of the local diffusion coefficients calculated by integrating the velocity autocorrelation functions. It was confirmed that the structure of the interface region affected the cooling rate of the overall system. The structural properties at the various local regions after a cooling were assessed in terms of the configurational properties including the coordination and bond-angle distributions. A spontaneous nucleation of Si near a interface was observed during a natural cooling.

Original languageEnglish
Title of host publicationMultiscale Modeling of Materials
Pages225-230
Number of pages6
Volume978
Publication statusPublished - Dec 1 2006
Event2006 MRS Fall Meeting - Boston, MA, United States
Duration: Nov 27 2006Dec 1 2006

Other

Other2006 MRS Fall Meeting
CountryUnited States
CityBoston, MA
Period11/27/0612/1/06

Fingerprint

Excimer lasers
Silicon
excimer lasers
Cooling
cooling
silicon
Autocorrelation
heat transmission
autocorrelation
Molecular dynamics
Molten materials
Structural properties
Nucleation
diffusion coefficient
nucleation
molecular dynamics
Heat transfer
Computer simulation
Liquids
liquids

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Lee, B. M., Seong, B. S., Kim, H. R., Munetoh, S., & Motooka, T. (2006). Cooling mechanism and structural change of local regions with a different cooling rate of excimer laser annealed Si. In Multiscale Modeling of Materials (Vol. 978, pp. 225-230)

Cooling mechanism and structural change of local regions with a different cooling rate of excimer laser annealed Si. / Lee, Byoung Min; Seong, Baek Seok; Kim, Hak Rho; Munetoh, Shinji; Motooka, Teruaki.

Multiscale Modeling of Materials. Vol. 978 2006. p. 225-230.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Lee, BM, Seong, BS, Kim, HR, Munetoh, S & Motooka, T 2006, Cooling mechanism and structural change of local regions with a different cooling rate of excimer laser annealed Si. in Multiscale Modeling of Materials. vol. 978, pp. 225-230, 2006 MRS Fall Meeting, Boston, MA, United States, 11/27/06.
Lee BM, Seong BS, Kim HR, Munetoh S, Motooka T. Cooling mechanism and structural change of local regions with a different cooling rate of excimer laser annealed Si. In Multiscale Modeling of Materials. Vol. 978. 2006. p. 225-230
Lee, Byoung Min ; Seong, Baek Seok ; Kim, Hak Rho ; Munetoh, Shinji ; Motooka, Teruaki. / Cooling mechanism and structural change of local regions with a different cooling rate of excimer laser annealed Si. Multiscale Modeling of Materials. Vol. 978 2006. pp. 225-230
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