Cooling rate dependent high substitutional Sn concentration (>10%) in GeSn crystals on insulator by pulsed laser-annealing

K. Moto, R. Matsumura, Taizoh Sadoh, Hiroshi Ikenoue, M. Miyao

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Crystallization of Ge1-xSnx (0.1≤x≤0.2) on quartz substrate by pulsed laser annealing was investigated. Substitutional Sn concentration increase with decreasing pulse number. As a result, GeSn crystals with very high substitutional Sn concentration (∼12%) has been realized for the sample (initial Sn concentration: 15%) with a single shot. These results were attributed to the nonthermal equilibrium growth with higher cooling rate by decreasing pulse number. This technique is expected for application to highspeed thin-film-transistors and high-efficiency optical devices.

Original languageEnglish
Title of host publicationThin Film Transistors 13, TFT 13
PublisherElectrochemical Society Inc.
Pages109-113
Number of pages5
Volume75
Edition10
ISBN (Electronic)9781607685395
DOIs
Publication statusPublished - 2016
EventSymposium on Thin Film Transistors 13, TFT 2016 - PRiME 2016/230th ECS Meeting - Honolulu, United States
Duration: Oct 2 2016Oct 7 2016

Other

OtherSymposium on Thin Film Transistors 13, TFT 2016 - PRiME 2016/230th ECS Meeting
CountryUnited States
CityHonolulu
Period10/2/1610/7/16

Fingerprint

Thin film transistors
Optical devices
Pulsed lasers
Quartz
Crystallization
Annealing
Cooling
Crystals
Substrates

All Science Journal Classification (ASJC) codes

  • Engineering(all)

Cite this

Moto, K., Matsumura, R., Sadoh, T., Ikenoue, H., & Miyao, M. (2016). Cooling rate dependent high substitutional Sn concentration (>10%) in GeSn crystals on insulator by pulsed laser-annealing. In Thin Film Transistors 13, TFT 13 (10 ed., Vol. 75, pp. 109-113). Electrochemical Society Inc.. https://doi.org/10.1149/07510.0109ecst

Cooling rate dependent high substitutional Sn concentration (>10%) in GeSn crystals on insulator by pulsed laser-annealing. / Moto, K.; Matsumura, R.; Sadoh, Taizoh; Ikenoue, Hiroshi; Miyao, M.

Thin Film Transistors 13, TFT 13. Vol. 75 10. ed. Electrochemical Society Inc., 2016. p. 109-113.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Moto, K, Matsumura, R, Sadoh, T, Ikenoue, H & Miyao, M 2016, Cooling rate dependent high substitutional Sn concentration (>10%) in GeSn crystals on insulator by pulsed laser-annealing. in Thin Film Transistors 13, TFT 13. 10 edn, vol. 75, Electrochemical Society Inc., pp. 109-113, Symposium on Thin Film Transistors 13, TFT 2016 - PRiME 2016/230th ECS Meeting, Honolulu, United States, 10/2/16. https://doi.org/10.1149/07510.0109ecst
Moto K, Matsumura R, Sadoh T, Ikenoue H, Miyao M. Cooling rate dependent high substitutional Sn concentration (>10%) in GeSn crystals on insulator by pulsed laser-annealing. In Thin Film Transistors 13, TFT 13. 10 ed. Vol. 75. Electrochemical Society Inc. 2016. p. 109-113 https://doi.org/10.1149/07510.0109ecst
Moto, K. ; Matsumura, R. ; Sadoh, Taizoh ; Ikenoue, Hiroshi ; Miyao, M. / Cooling rate dependent high substitutional Sn concentration (>10%) in GeSn crystals on insulator by pulsed laser-annealing. Thin Film Transistors 13, TFT 13. Vol. 75 10. ed. Electrochemical Society Inc., 2016. pp. 109-113
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