Cooling rate dependent high substitutional Sn concentration (>10%) in GeSn crystals on insulator by pulsed laser-annealing

K. Moto, R. Matsumura, Taizoh Sadoh, Hiroshi Ikenoue, M. Miyao

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Crystallization of Ge1-xSnx (0.1≤x≤0.2) on quartz substrate by pulsed laser annealing was investigated. Substitutional Sn concentration increase with decreasing pulse number. As a result, GeSn crystals with very high substitutional Sn concentration (∼12%) has been realized for the sample (initial Sn concentration: 15%) with a single shot. These results were attributed to the nonthermal equilibrium growth with higher cooling rate by decreasing pulse number. This technique is expected for application to highspeed thin-film-transistors and high-efficiency optical devices.

Original languageEnglish
Title of host publicationThin Film Transistors 13, TFT 13
PublisherElectrochemical Society Inc.
Pages109-113
Number of pages5
Volume75
Edition10
ISBN (Electronic)9781607685395
DOIs
Publication statusPublished - 2016
EventSymposium on Thin Film Transistors 13, TFT 2016 - PRiME 2016/230th ECS Meeting - Honolulu, United States
Duration: Oct 2 2016Oct 7 2016

Other

OtherSymposium on Thin Film Transistors 13, TFT 2016 - PRiME 2016/230th ECS Meeting
CountryUnited States
CityHonolulu
Period10/2/1610/7/16

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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