Correlation between intrinsic defects and electrical properties in the high-quality Cu2ZnSnS4 single crystal

Akira Nagaoka; Hideto Miyake; Tomoyasu Taniyama; Koichi Kakimoto; Kenji Yoshino

doi:10.1063/1.4821279

Correlation between intrinsic defects and electrical properties in the high-quality Cu₂ZnSnS₄ single crystal

Akira Nagaoka, Hideto Miyake, Tomoyasu Taniyama, Koichi Kakimoto, Kenji Yoshino

Division of Renewable Energy Dynamics

Research output: Contribution to journal › Article › peer-review

66 Citations (Scopus)

Abstract

Temperature dependent Hall effect measurements from 20 to 300 K have been performed on the quaternary compounds Cu₂ZnSnS₄ (CZTS) single crystals. The conductivity mechanisms can be described by a two-path system using Mott variable range hopping and typical thermal activation conduction. The center level of the acceptor band is 132 meV above the valence band maximum and is of width 40 meV. A correlation between the activation energy and acceptor concentration in CZTS is observed.

Original language	English
Article number	112107
Journal	Applied Physics Letters
Volume	103
Issue number	11
DOIs	https://doi.org/10.1063/1.4821279
Publication status	Published - Sept 9 2013

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.4821279

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title = "Correlation between intrinsic defects and electrical properties in the high-quality Cu2ZnSnS4 single crystal",

abstract = "Temperature dependent Hall effect measurements from 20 to 300 K have been performed on the quaternary compounds Cu2ZnSnS4 (CZTS) single crystals. The conductivity mechanisms can be described by a two-path system using Mott variable range hopping and typical thermal activation conduction. The center level of the acceptor band is 132 meV above the valence band maximum and is of width 40 meV. A correlation between the activation energy and acceptor concentration in CZTS is observed.",

author = "Akira Nagaoka and Hideto Miyake and Tomoyasu Taniyama and Koichi Kakimoto and Kenji Yoshino",

note = "Funding Information: This work was partially supported by the Collaborative Research Project of the Materials and Structures Laboratory, Tokyo Institute of Technology, the Sasakawa Scientific Research Grant from The Japan Science Society and Asahi Glass Foundation. The first author is supported by JSPS Research Fellowships for Young Scientists.",

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doi = "10.1063/1.4821279",

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T1 - Correlation between intrinsic defects and electrical properties in the high-quality Cu2ZnSnS4 single crystal

AU - Nagaoka, Akira

AU - Miyake, Hideto

AU - Taniyama, Tomoyasu

AU - Kakimoto, Koichi

AU - Yoshino, Kenji

N1 - Funding Information: This work was partially supported by the Collaborative Research Project of the Materials and Structures Laboratory, Tokyo Institute of Technology, the Sasakawa Scientific Research Grant from The Japan Science Society and Asahi Glass Foundation. The first author is supported by JSPS Research Fellowships for Young Scientists.

PY - 2013/9/9

Y1 - 2013/9/9

N2 - Temperature dependent Hall effect measurements from 20 to 300 K have been performed on the quaternary compounds Cu2ZnSnS4 (CZTS) single crystals. The conductivity mechanisms can be described by a two-path system using Mott variable range hopping and typical thermal activation conduction. The center level of the acceptor band is 132 meV above the valence band maximum and is of width 40 meV. A correlation between the activation energy and acceptor concentration in CZTS is observed.

AB - Temperature dependent Hall effect measurements from 20 to 300 K have been performed on the quaternary compounds Cu2ZnSnS4 (CZTS) single crystals. The conductivity mechanisms can be described by a two-path system using Mott variable range hopping and typical thermal activation conduction. The center level of the acceptor band is 132 meV above the valence band maximum and is of width 40 meV. A correlation between the activation energy and acceptor concentration in CZTS is observed.

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Correlation between intrinsic defects and electrical properties in the high-quality Cu₂ZnSnS₄ single crystal

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