Correlation between intrinsic defects and electrical properties in the high-quality Cu2ZnSnS4 single crystal

Akira Nagaoka, Hideto Miyake, Tomoyasu Taniyama, Koichi Kakimoto, Kenji Yoshino

Research output: Contribution to journalArticle

52 Citations (Scopus)

Abstract

Temperature dependent Hall effect measurements from 20 to 300 K have been performed on the quaternary compounds Cu2ZnSnS4 (CZTS) single crystals. The conductivity mechanisms can be described by a two-path system using Mott variable range hopping and typical thermal activation conduction. The center level of the acceptor band is 132 meV above the valence band maximum and is of width 40 meV. A correlation between the activation energy and acceptor concentration in CZTS is observed.

Original languageEnglish
Article number112107
JournalApplied Physics Letters
Volume103
Issue number11
DOIs
Publication statusPublished - Sep 9 2013

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electrical properties
single crystals
defects
Hall effect
activation
activation energy
valence
conduction
conductivity
temperature

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Correlation between intrinsic defects and electrical properties in the high-quality Cu2ZnSnS4 single crystal. / Nagaoka, Akira; Miyake, Hideto; Taniyama, Tomoyasu; Kakimoto, Koichi; Yoshino, Kenji.

In: Applied Physics Letters, Vol. 103, No. 11, 112107, 09.09.2013.

Research output: Contribution to journalArticle

Nagaoka, Akira ; Miyake, Hideto ; Taniyama, Tomoyasu ; Kakimoto, Koichi ; Yoshino, Kenji. / Correlation between intrinsic defects and electrical properties in the high-quality Cu2ZnSnS4 single crystal. In: Applied Physics Letters. 2013 ; Vol. 103, No. 11.
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