Correlation between temperature and impurity concentration fluctuations in silicon crystals grown by the Czochralski method

Koichi Kakimoto, Toshiyuki Shyo, Minoru Eguchi

Research output: Contribution to journalArticlepeer-review

7 Citations (Scopus)

Abstract

An experiment is presented to clarify the correlation between temperature fluctuations in silicon melt and impurity concentration in grown silicon crystals. Fluctuations in temperature and concentration show a correlation in the frequency domain according to the results of fast Fourier transform analysis. The intrinsic instability of silicon convection, which includes fluctuations in temperature, affected the fluctuation in impurity concentration.

Original languageEnglish
Pages (from-to)187-191
Number of pages5
JournalJournal of Crystal Growth
Volume151
Issue number1-2
DOIs
Publication statusPublished - May 2 1995
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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