Correlation between volume fraction of clusters incorporated into a-Si:H films and hydrogen content associated with Si-H2 bonds in the films

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Abstract

The correlation between hydrogen content associated with the Si-H 2 bonds in a-Si:H films and volume fraction of clusters was studied. The study was carried out by using the downstream-cluster-collection (DCC) method and by combining the method with cluster suppressed Plasma CVD method. It was found that the DCC method provides information on size distribution density, shape and structure of clusters in the reactor. It was also observed that the incorporation of clusters above about 1 nm into a-Si:H films was an origin of Si-H2 bonds in the films.

Original languageEnglish
Pages (from-to)1536-1539
Number of pages4
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume22
Issue number4
DOIs
Publication statusPublished - Jul 1 2004

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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