Correlations between antibunching and blinking of photoluminescence from a single CdSe quantum dot

X. S. Xu, T. Yamada, Shiyoshi Yokoyama

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

The antibunching and blinking from a single CdSe/ZnS nanocrystal with an emission wavelength of 655 nm were investigated under different excitation powers. The decay process of the photoluminescence from nanocrystal was fitted into a stretched exponential, and the small lifetime and the small stretching exponent under a high excitation power were explained by using nonradiative multi-channel model. The probability of distributions for off-times from photoluminescence intermittence was fitted into the power law, and the power exponents were explained by using a tunneling model. For higher excitation power, the Auger-assisted tunneling model takes effect, where the tunneling rate increases and the observed lifetime decreases. For weak excitation power, the electron directly tunnels between the nanocrystal and trapping state without Auger assistance. The correlation between antibunching and blinking from the same nanocrystal was analyzed.

Original languageEnglish
Pages (from-to)691-697
Number of pages7
JournalEuropean Physical Journal D
Volume55
Issue number3
DOIs
Publication statusPublished - Dec 1 2009

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blinking
nanocrystals
quantum dots
photoluminescence
excitation
exponents
life (durability)
tunnels
trapping
decay
wavelengths
electrons

All Science Journal Classification (ASJC) codes

  • Atomic and Molecular Physics, and Optics

Cite this

Correlations between antibunching and blinking of photoluminescence from a single CdSe quantum dot. / Xu, X. S.; Yamada, T.; Yokoyama, Shiyoshi.

In: European Physical Journal D, Vol. 55, No. 3, 01.12.2009, p. 691-697.

Research output: Contribution to journalArticle

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