CPP-GMR films with a current-confined-path nano-oxide layer (CCP-NOL)

Hideaki Fukuzawa, Hiromi Yuasa, Hitoshi Iwasaki

Research output: Contribution to journalArticle

27 Citations (Scopus)

Abstract

We investigated the film performance and nanostructure of current-perpendicular-to-plane giant magnetoresistance (CPP-GMR) spin-valve film with a current-confined-path nano-oxide layer (CCP-NOL). By applying ion-assisted oxidation (IAO) for the CCP-NOL formation, we enhanced the MR ratio to 5.4% at a small RA value of 500 mΩ νm2 for conventional Co90Fe10 layers. Furthermore, the use of bcc-Fe 50Co50 also increased the MR ratio to 8.2% at a small RA value of 580 mΩ νm2. A modified Valet-Fert model for the CCP-NOL showed that the MR enhancement by the IAO is due to the improvement in resistivity of the CCP, and that by Fe50Co50 is due to a larger spin-dependent interface scattering effect. Analysis by cross-sectional TEM and three-dimensional atom probe confirmed the formation of the CCP-NOL structure. A reliability test for test element devices showed almost no change even under acceleration stress. The CPP-GMR spin-valve film with the CCP-NOL is extendable to future high-density recording heads due to its potential for a higher MR ratio at a small value of RA.

Original languageEnglish
Article numberS01
Pages (from-to)1213-1220
Number of pages8
JournalJournal of Physics D: Applied Physics
Volume40
Issue number5
DOIs
Publication statusPublished - Mar 7 2007
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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