Crack tip dislocations observed by combining scanning transmission electron microscopy and computed tomography

S. Sadamatsu, Masaki Tanaka, K. Higashida, Kenji Kaneko, Masatoshi Mitsuhara, Satoshi Hata, M. Honda

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

Crack tip dislocations and dislocations introduced by three point-bending tests at high temperature are observed by combinating scanning transmission electron microscopy and computed tomography (STEM-CT). Commercially available P type (001) single crystal silicon wafers were employed. A series of STEM image was acquired from -60° to +60° in tilt range with 2° in tilt step. The diffraction vector was maintained close to g(hkl) = 220 during the acquisition by adjusting the [110] direction of the sample parallel to the tilt axis of the holder. Reconstructed images of dislocations revealed dislocation structures in three-dimension.

Original languageEnglish
Title of host publicationTHERMEC 2009 Supplement
Pages473-478
Number of pages6
DOIs
Publication statusPublished - Feb 8 2010
Event6th International Conference on Processing and Manufacturing of Advanced Materials - THERMEC'2009 - Berlin, Germany
Duration: Aug 25 2009Aug 29 2009

Publication series

NameAdvanced Materials Research
Volume89-91
ISSN (Print)1022-6680

Other

Other6th International Conference on Processing and Manufacturing of Advanced Materials - THERMEC'2009
CountryGermany
CityBerlin
Period8/25/098/29/09

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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