Crack Tip dislocations Observed by High-Voltage Electron-Microscopy in Single Crystal Silicon

Kenji Higashida, Masaki Tanaka

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Original languageEnglish
Title of host publication Proceedings of 16th International Microscopy Congress, Publication committee of IMC16
Pages1110
Number of pages1
Publication statusPublished - 2006

Cite this

Higashida, K., & Tanaka, M. (2006). Crack Tip dislocations Observed by High-Voltage Electron-Microscopy in Single Crystal Silicon. In Proceedings of 16th International Microscopy Congress, Publication committee of IMC16 (pp. 1110)

Crack Tip dislocations Observed by High-Voltage Electron-Microscopy in Single Crystal Silicon. / Higashida, Kenji; Tanaka, Masaki.

Proceedings of 16th International Microscopy Congress, Publication committee of IMC16. 2006. p. 1110.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Higashida, K & Tanaka, M 2006, Crack Tip dislocations Observed by High-Voltage Electron-Microscopy in Single Crystal Silicon. in Proceedings of 16th International Microscopy Congress, Publication committee of IMC16. pp. 1110.
Higashida K, Tanaka M. Crack Tip dislocations Observed by High-Voltage Electron-Microscopy in Single Crystal Silicon. In Proceedings of 16th International Microscopy Congress, Publication committee of IMC16. 2006. p. 1110
Higashida, Kenji ; Tanaka, Masaki. / Crack Tip dislocations Observed by High-Voltage Electron-Microscopy in Single Crystal Silicon. Proceedings of 16th International Microscopy Congress, Publication committee of IMC16. 2006. pp. 1110
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