Crack tip shielding observed with high-resolution transmission electron microscopy

Damar Rastri Adhika, Masaki Tanaka, Takeshi Daio, Kenji Higashida

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

The dislocation shielding field at a crack tip was experimentally proven at the atomic scale by measuring the local strain in front of the crack tip using high-resolution transmission electron microscopy (HRTEM) and geometric phase analysis (GPA). Single crystalline (110) silicon wafers were employed. Cracks were introduced using a Vickers indenter at room temperature. The crack tip region was observed using HRTEM followed by strain measurements using GPA. The measured strain field at the crack tip was compressive owing to dislocation shielding, which is in good agreement with the strain field calculated from elastic theory.

Original languageEnglish
Pages (from-to)335-340
Number of pages6
JournalMicroscopy
Volume64
Issue number5
DOIs
Publication statusPublished - Jan 1 2015

Fingerprint

crack tips
High resolution transmission electron microscopy
Transmission Electron Microscopy
Crack tips
Shielding
shielding
transmission electron microscopy
high resolution
Silicon
Temperature
strain measurement
Strain measurement
Silicon wafers
cracks
wafers
Crystalline materials
Cracks
silicon
room temperature

All Science Journal Classification (ASJC) codes

  • Structural Biology
  • Radiology Nuclear Medicine and imaging
  • Instrumentation

Cite this

Crack tip shielding observed with high-resolution transmission electron microscopy. / Adhika, Damar Rastri; Tanaka, Masaki; Daio, Takeshi; Higashida, Kenji.

In: Microscopy, Vol. 64, No. 5, 01.01.2015, p. 335-340.

Research output: Contribution to journalArticle

Adhika, Damar Rastri ; Tanaka, Masaki ; Daio, Takeshi ; Higashida, Kenji. / Crack tip shielding observed with high-resolution transmission electron microscopy. In: Microscopy. 2015 ; Vol. 64, No. 5. pp. 335-340.
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