Crucial role of doping dynamics on transport properties of Sb-doped SnO2 nanowires

Annop Klamchuen, Takeshi Yanagida, Kazuki Nagashima, Shu Seki, Keisuke Oka, Masateru Taniguchi, Tomoji Kawai

Research output: Contribution to journalArticle

34 Citations (Scopus)

Abstract

Impurity doping on semiconductor nanowires grown by vapor-liquid-solid (VLS) mechanism remains an important challenge. Here we demonstrate the importance of doping dynamics to control the transport properties of Sb-doped SnO2 nanowires. Sb doping decreased the resistivity of SnO 2 nanowires down to 10-3 cm range, while there was the lower bound of resistivity even increasing further the dopant concentration from supplied source. We found that the doping limitation is related to the re-evaporation events of dopant through vapor-solid growth process rather than VLS process. Thus understanding the dopant incorporation dynamics is essential to control the transport properties of SnO2 nanowires by impurity doping.

Original languageEnglish
Article number053105
JournalApplied Physics Letters
Volume95
Issue number5
DOIs
Publication statusPublished - Aug 14 2009
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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