Crucial role of doping dynamics on transport properties of Sb-doped SnO2 nanowires

Annop Klamchuen, Takeshi Yanagida, Kazuki Nagashima, Shu Seki, Keisuke Oka, Masateru Taniguchi, Tomoji Kawai

Research output: Contribution to journalArticle

33 Citations (Scopus)

Abstract

Impurity doping on semiconductor nanowires grown by vapor-liquid-solid (VLS) mechanism remains an important challenge. Here we demonstrate the importance of doping dynamics to control the transport properties of Sb-doped SnO2 nanowires. Sb doping decreased the resistivity of SnO 2 nanowires down to 10-3 cm range, while there was the lower bound of resistivity even increasing further the dopant concentration from supplied source. We found that the doping limitation is related to the re-evaporation events of dopant through vapor-solid growth process rather than VLS process. Thus understanding the dopant incorporation dynamics is essential to control the transport properties of SnO2 nanowires by impurity doping.

Original languageEnglish
Article number053105
JournalApplied Physics Letters
Volume95
Issue number5
DOIs
Publication statusPublished - Aug 14 2009
Externally publishedYes

Fingerprint

nanowires
transport properties
vapors
impurities
electrical resistivity
liquids
evaporation

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Crucial role of doping dynamics on transport properties of Sb-doped SnO2 nanowires. / Klamchuen, Annop; Yanagida, Takeshi; Nagashima, Kazuki; Seki, Shu; Oka, Keisuke; Taniguchi, Masateru; Kawai, Tomoji.

In: Applied Physics Letters, Vol. 95, No. 5, 053105, 14.08.2009.

Research output: Contribution to journalArticle

Klamchuen, Annop ; Yanagida, Takeshi ; Nagashima, Kazuki ; Seki, Shu ; Oka, Keisuke ; Taniguchi, Masateru ; Kawai, Tomoji. / Crucial role of doping dynamics on transport properties of Sb-doped SnO2 nanowires. In: Applied Physics Letters. 2009 ; Vol. 95, No. 5.
@article{5c68187bbada45b1bf27f91012c6c0ae,
title = "Crucial role of doping dynamics on transport properties of Sb-doped SnO2 nanowires",
abstract = "Impurity doping on semiconductor nanowires grown by vapor-liquid-solid (VLS) mechanism remains an important challenge. Here we demonstrate the importance of doping dynamics to control the transport properties of Sb-doped SnO2 nanowires. Sb doping decreased the resistivity of SnO 2 nanowires down to 10-3 cm range, while there was the lower bound of resistivity even increasing further the dopant concentration from supplied source. We found that the doping limitation is related to the re-evaporation events of dopant through vapor-solid growth process rather than VLS process. Thus understanding the dopant incorporation dynamics is essential to control the transport properties of SnO2 nanowires by impurity doping.",
author = "Annop Klamchuen and Takeshi Yanagida and Kazuki Nagashima and Shu Seki and Keisuke Oka and Masateru Taniguchi and Tomoji Kawai",
year = "2009",
month = "8",
day = "14",
doi = "10.1063/1.3186080",
language = "English",
volume = "95",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "5",

}

TY - JOUR

T1 - Crucial role of doping dynamics on transport properties of Sb-doped SnO2 nanowires

AU - Klamchuen, Annop

AU - Yanagida, Takeshi

AU - Nagashima, Kazuki

AU - Seki, Shu

AU - Oka, Keisuke

AU - Taniguchi, Masateru

AU - Kawai, Tomoji

PY - 2009/8/14

Y1 - 2009/8/14

N2 - Impurity doping on semiconductor nanowires grown by vapor-liquid-solid (VLS) mechanism remains an important challenge. Here we demonstrate the importance of doping dynamics to control the transport properties of Sb-doped SnO2 nanowires. Sb doping decreased the resistivity of SnO 2 nanowires down to 10-3 cm range, while there was the lower bound of resistivity even increasing further the dopant concentration from supplied source. We found that the doping limitation is related to the re-evaporation events of dopant through vapor-solid growth process rather than VLS process. Thus understanding the dopant incorporation dynamics is essential to control the transport properties of SnO2 nanowires by impurity doping.

AB - Impurity doping on semiconductor nanowires grown by vapor-liquid-solid (VLS) mechanism remains an important challenge. Here we demonstrate the importance of doping dynamics to control the transport properties of Sb-doped SnO2 nanowires. Sb doping decreased the resistivity of SnO 2 nanowires down to 10-3 cm range, while there was the lower bound of resistivity even increasing further the dopant concentration from supplied source. We found that the doping limitation is related to the re-evaporation events of dopant through vapor-solid growth process rather than VLS process. Thus understanding the dopant incorporation dynamics is essential to control the transport properties of SnO2 nanowires by impurity doping.

UR - http://www.scopus.com/inward/record.url?scp=68349144486&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=68349144486&partnerID=8YFLogxK

U2 - 10.1063/1.3186080

DO - 10.1063/1.3186080

M3 - Article

VL - 95

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 5

M1 - 053105

ER -