TY - JOUR
T1 - Crystal growth and characterization of Ce:Gd3(Ga,Al) 5O12 single crystal using floating zone method in different O2 partial pressure
AU - Yoshikawa, Akira
AU - Fujimoto, Yutaka
AU - Yamaji, Akihiro
AU - Kurosawa, Shunsuke
AU - Pejchal, Jan
AU - Sugiyama, Makoto
AU - Wakahara, Shingo
AU - Futami, Yoshisuke
AU - Yokota, Yuui
AU - Kamada, Kei
AU - Yubuta, Kunio
AU - Shishido, Toetsu
AU - Nikl, Martin
N1 - Funding Information:
This work was partially supported by the funding program for next generation world-leading researchers, Japan society for promotion of science. Some part of this work was carried out under the collaboration program of Advanced Research Center of Metallic Glasses (ARCMG), IMR, Tohoku University. Authors thank to Mr. Sugawara at Cryst. Growth & Design in ARCMG, IMR, Tohoku Univ.
PY - 2013/9
Y1 - 2013/9
N2 - Multicomponent garnet Ce:Gd3(Ga,Al)5O12 (Ce:GAGG) single crystals show very high light yield with reasonably fast scintillation response. Therefore, they can be promising scintillators for gamma-ray detection. However, in the decay curve a very slow component does exist. Therefore, it is necessary to optimize further the crystal growth technology of Ce:GAGG. In this study, Ce:GAGG single crystals were grown by the floating zone (FZ) method under atmospheres of various compositions such as Ar 100%, Ar 80% + O2 20%, Ar 60% + O2 40% and O2 100%. Radioluminescence spectra are dominated by the band at about 540 nm due to Ce3+ 5d1-4f transition. The Ce:GAGG single crystal grown under Ar atmosphere shows an intense slower decay component. It can be related to the processes of the delayed radiative recombination and thermally induced ionization of 5d1 level of Ce3+ center possibly further affected by oxygen vacancies. This slower decay process is significantly suppressed in the samples grown under the O2 containing atmosphere.
AB - Multicomponent garnet Ce:Gd3(Ga,Al)5O12 (Ce:GAGG) single crystals show very high light yield with reasonably fast scintillation response. Therefore, they can be promising scintillators for gamma-ray detection. However, in the decay curve a very slow component does exist. Therefore, it is necessary to optimize further the crystal growth technology of Ce:GAGG. In this study, Ce:GAGG single crystals were grown by the floating zone (FZ) method under atmospheres of various compositions such as Ar 100%, Ar 80% + O2 20%, Ar 60% + O2 40% and O2 100%. Radioluminescence spectra are dominated by the band at about 540 nm due to Ce3+ 5d1-4f transition. The Ce:GAGG single crystal grown under Ar atmosphere shows an intense slower decay component. It can be related to the processes of the delayed radiative recombination and thermally induced ionization of 5d1 level of Ce3+ center possibly further affected by oxygen vacancies. This slower decay process is significantly suppressed in the samples grown under the O2 containing atmosphere.
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U2 - 10.1016/j.optmat.2013.02.021
DO - 10.1016/j.optmat.2013.02.021
M3 - Article
AN - SCOPUS:84883745332
VL - 35
SP - 1882
EP - 1886
JO - Optical Materials
JF - Optical Materials
SN - 0925-3467
IS - 11
ER -