Crystal growth and characterization of Ce:Gd3(Ga,Al) 5O12 single crystal using floating zone method in different O2 partial pressure

Akira Yoshikawa; Yutaka Fujimoto; Akihiro Yamaji; Shunsuke Kurosawa; Jan Pejchal; Makoto Sugiyama; Shingo Wakahara; Yoshisuke Futami; Yuui Yokota; Kei Kamada; Kunio Yubuta; Toetsu Shishido; Martin Nikl

doi:10.1016/j.optmat.2013.02.021

Crystal growth and characterization of Ce:Gd₃(Ga,Al) ₅O₁₂ single crystal using floating zone method in different O₂ partial pressure

Akira Yoshikawa, Yutaka Fujimoto, Akihiro Yamaji, Shunsuke Kurosawa, Jan Pejchal, Makoto Sugiyama, Shingo Wakahara, Yoshisuke Futami, Yuui Yokota, Kei Kamada, Kunio Yubuta, Toetsu Shishido, Martin Nikl

Research output: Contribution to journal › Article › peer-review

17 Citations (Scopus)

Abstract

Multicomponent garnet Ce:Gd₃(Ga,Al)₅O₁₂ (Ce:GAGG) single crystals show very high light yield with reasonably fast scintillation response. Therefore, they can be promising scintillators for gamma-ray detection. However, in the decay curve a very slow component does exist. Therefore, it is necessary to optimize further the crystal growth technology of Ce:GAGG. In this study, Ce:GAGG single crystals were grown by the floating zone (FZ) method under atmospheres of various compositions such as Ar 100%, Ar 80% + O₂ 20%, Ar 60% + O₂ 40% and O₂ 100%. Radioluminescence spectra are dominated by the band at about 540 nm due to Ce³⁺ 5d₁-4f transition. The Ce:GAGG single crystal grown under Ar atmosphere shows an intense slower decay component. It can be related to the processes of the delayed radiative recombination and thermally induced ionization of 5d₁ level of Ce³⁺ center possibly further affected by oxygen vacancies. This slower decay process is significantly suppressed in the samples grown under the O₂ containing atmosphere.

Original language	English
Pages (from-to)	1882-1886
Number of pages	5
Journal	Optical Materials
Volume	35
Issue number	11
DOIs	https://doi.org/10.1016/j.optmat.2013.02.021
Publication status	Published - Sep 2013
Externally published	Yes

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Computer Science(all)
Atomic and Molecular Physics, and Optics
Spectroscopy
Physical and Theoretical Chemistry
Organic Chemistry
Inorganic Chemistry
Electrical and Electronic Engineering

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Yoshikawa, A., Fujimoto, Y., Yamaji, A., Kurosawa, S., Pejchal, J., Sugiyama, M., Wakahara, S., Futami, Y., Yokota, Y., Kamada, K., Yubuta, K., Shishido, T., & Nikl, M. (2013). Crystal growth and characterization of Ce:Gd₃(Ga,Al) ₅O₁₂ single crystal using floating zone method in different O₂ partial pressure. Optical Materials, 35(11), 1882-1886. https://doi.org/10.1016/j.optmat.2013.02.021

Crystal growth and characterization of Ce:Gd₃(Ga,Al) ₅O₁₂ single crystal using floating zone method in different O₂ partial pressure. / Yoshikawa, Akira; Fujimoto, Yutaka; Yamaji, Akihiro; Kurosawa, Shunsuke; Pejchal, Jan; Sugiyama, Makoto; Wakahara, Shingo; Futami, Yoshisuke; Yokota, Yuui; Kamada, Kei; Yubuta, Kunio; Shishido, Toetsu; Nikl, Martin.

In: Optical Materials, Vol. 35, No. 11, 09.2013, p. 1882-1886.

Research output: Contribution to journal › Article › peer-review

Yoshikawa, A, Fujimoto, Y, Yamaji, A, Kurosawa, S, Pejchal, J, Sugiyama, M, Wakahara, S, Futami, Y, Yokota, Y, Kamada, K, Yubuta, K, Shishido, T & Nikl, M 2013, 'Crystal growth and characterization of Ce:Gd₃(Ga,Al) ₅O₁₂ single crystal using floating zone method in different O₂ partial pressure', Optical Materials, vol. 35, no. 11, pp. 1882-1886. https://doi.org/10.1016/j.optmat.2013.02.021

Yoshikawa, Akira ; Fujimoto, Yutaka ; Yamaji, Akihiro ; Kurosawa, Shunsuke ; Pejchal, Jan ; Sugiyama, Makoto ; Wakahara, Shingo ; Futami, Yoshisuke ; Yokota, Yuui ; Kamada, Kei ; Yubuta, Kunio ; Shishido, Toetsu ; Nikl, Martin. / Crystal growth and characterization of Ce:Gd₃(Ga,Al) ₅O₁₂ single crystal using floating zone method in different O₂ partial pressure. In: Optical Materials. 2013 ; Vol. 35, No. 11. pp. 1882-1886.

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title = "Crystal growth and characterization of Ce:Gd3(Ga,Al) 5O12 single crystal using floating zone method in different O2 partial pressure",

abstract = "Multicomponent garnet Ce:Gd3(Ga,Al)5O12 (Ce:GAGG) single crystals show very high light yield with reasonably fast scintillation response. Therefore, they can be promising scintillators for gamma-ray detection. However, in the decay curve a very slow component does exist. Therefore, it is necessary to optimize further the crystal growth technology of Ce:GAGG. In this study, Ce:GAGG single crystals were grown by the floating zone (FZ) method under atmospheres of various compositions such as Ar 100%, Ar 80% + O2 20%, Ar 60% + O2 40% and O2 100%. Radioluminescence spectra are dominated by the band at about 540 nm due to Ce3+ 5d1-4f transition. The Ce:GAGG single crystal grown under Ar atmosphere shows an intense slower decay component. It can be related to the processes of the delayed radiative recombination and thermally induced ionization of 5d1 level of Ce3+ center possibly further affected by oxygen vacancies. This slower decay process is significantly suppressed in the samples grown under the O2 containing atmosphere.",

author = "Akira Yoshikawa and Yutaka Fujimoto and Akihiro Yamaji and Shunsuke Kurosawa and Jan Pejchal and Makoto Sugiyama and Shingo Wakahara and Yoshisuke Futami and Yuui Yokota and Kei Kamada and Kunio Yubuta and Toetsu Shishido and Martin Nikl",

note = "Funding Information: This work was partially supported by the funding program for next generation world-leading researchers, Japan society for promotion of science. Some part of this work was carried out under the collaboration program of Advanced Research Center of Metallic Glasses (ARCMG), IMR, Tohoku University. Authors thank to Mr. Sugawara at Cryst. Growth & Design in ARCMG, IMR, Tohoku Univ. ",

year = "2013",

month = sep,

doi = "10.1016/j.optmat.2013.02.021",

language = "English",

volume = "35",

pages = "1882--1886",

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T1 - Crystal growth and characterization of Ce:Gd3(Ga,Al) 5O12 single crystal using floating zone method in different O2 partial pressure

AU - Yoshikawa, Akira

AU - Fujimoto, Yutaka

AU - Yamaji, Akihiro

AU - Kurosawa, Shunsuke

AU - Pejchal, Jan

AU - Sugiyama, Makoto

AU - Wakahara, Shingo

AU - Futami, Yoshisuke

AU - Yokota, Yuui

AU - Kamada, Kei

AU - Yubuta, Kunio

AU - Shishido, Toetsu

AU - Nikl, Martin

N1 - Funding Information: This work was partially supported by the funding program for next generation world-leading researchers, Japan society for promotion of science. Some part of this work was carried out under the collaboration program of Advanced Research Center of Metallic Glasses (ARCMG), IMR, Tohoku University. Authors thank to Mr. Sugawara at Cryst. Growth & Design in ARCMG, IMR, Tohoku Univ.

PY - 2013/9

Y1 - 2013/9

N2 - Multicomponent garnet Ce:Gd3(Ga,Al)5O12 (Ce:GAGG) single crystals show very high light yield with reasonably fast scintillation response. Therefore, they can be promising scintillators for gamma-ray detection. However, in the decay curve a very slow component does exist. Therefore, it is necessary to optimize further the crystal growth technology of Ce:GAGG. In this study, Ce:GAGG single crystals were grown by the floating zone (FZ) method under atmospheres of various compositions such as Ar 100%, Ar 80% + O2 20%, Ar 60% + O2 40% and O2 100%. Radioluminescence spectra are dominated by the band at about 540 nm due to Ce3+ 5d1-4f transition. The Ce:GAGG single crystal grown under Ar atmosphere shows an intense slower decay component. It can be related to the processes of the delayed radiative recombination and thermally induced ionization of 5d1 level of Ce3+ center possibly further affected by oxygen vacancies. This slower decay process is significantly suppressed in the samples grown under the O2 containing atmosphere.

AB - Multicomponent garnet Ce:Gd3(Ga,Al)5O12 (Ce:GAGG) single crystals show very high light yield with reasonably fast scintillation response. Therefore, they can be promising scintillators for gamma-ray detection. However, in the decay curve a very slow component does exist. Therefore, it is necessary to optimize further the crystal growth technology of Ce:GAGG. In this study, Ce:GAGG single crystals were grown by the floating zone (FZ) method under atmospheres of various compositions such as Ar 100%, Ar 80% + O2 20%, Ar 60% + O2 40% and O2 100%. Radioluminescence spectra are dominated by the band at about 540 nm due to Ce3+ 5d1-4f transition. The Ce:GAGG single crystal grown under Ar atmosphere shows an intense slower decay component. It can be related to the processes of the delayed radiative recombination and thermally induced ionization of 5d1 level of Ce3+ center possibly further affected by oxygen vacancies. This slower decay process is significantly suppressed in the samples grown under the O2 containing atmosphere.

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Crystal growth and characterization of Ce:Gd₃(Ga,Al) ₅O₁₂ single crystal using floating zone method in different O₂ partial pressure

Abstract

All Science Journal Classification (ASJC) codes

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