Crystal growth and characterization of Ce:Gd3(Ga,Al) 5O12 single crystal using floating zone method in different O2 partial pressure

Akira Yoshikawa, Yutaka Fujimoto, Akihiro Yamaji, Shunsuke Kurosawa, Jan Pejchal, Makoto Sugiyama, Shingo Wakahara, Yoshisuke Futami, Yuui Yokota, Kei Kamada, Kunio Yubuta, Toetsu Shishido, Martin Nikl

Research output: Contribution to journalArticlepeer-review

17 Citations (Scopus)

Abstract

Multicomponent garnet Ce:Gd3(Ga,Al)5O12 (Ce:GAGG) single crystals show very high light yield with reasonably fast scintillation response. Therefore, they can be promising scintillators for gamma-ray detection. However, in the decay curve a very slow component does exist. Therefore, it is necessary to optimize further the crystal growth technology of Ce:GAGG. In this study, Ce:GAGG single crystals were grown by the floating zone (FZ) method under atmospheres of various compositions such as Ar 100%, Ar 80% + O2 20%, Ar 60% + O2 40% and O2 100%. Radioluminescence spectra are dominated by the band at about 540 nm due to Ce3+ 5d1-4f transition. The Ce:GAGG single crystal grown under Ar atmosphere shows an intense slower decay component. It can be related to the processes of the delayed radiative recombination and thermally induced ionization of 5d1 level of Ce3+ center possibly further affected by oxygen vacancies. This slower decay process is significantly suppressed in the samples grown under the O2 containing atmosphere.

Original languageEnglish
Pages (from-to)1882-1886
Number of pages5
JournalOptical Materials
Volume35
Issue number11
DOIs
Publication statusPublished - Sep 2013
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Computer Science(all)
  • Atomic and Molecular Physics, and Optics
  • Spectroscopy
  • Physical and Theoretical Chemistry
  • Organic Chemistry
  • Inorganic Chemistry
  • Electrical and Electronic Engineering

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