Abstract
We have investigated the melt growth of Mg2Si crystal and its electrical and optical properties. Progress in Mg source purity and stoichiometric control during the growth enabled the development of a high purity Mg2Si crystal with low carrier density and a high stable Mg2Si with good doping controllability. The Mg2Si crystal grown by the pressure controlled Bridgman method using 5N purity or 6N purity of Mg source and purified PG crucible showed low electron density (∼1015cm-3) and high electron mobility (485cm2V-1 s-1 at 300K and 21900 cm2V-1 s-1 at 40 K). Silver doping in the high purity crystals performed the low-hole density of p-type Mg2Si (∼3 × 1016cm-3). Ionization energy of residual Al donor in the high purity crystal and Ag acceptor in the Ag doped crystals was determined as 8-9meV and 26meV, respectively. Indirect band gap energy Eg of approximately 0.61 eV at 300K and 0.69 eV at 4K were estimated by the optical transmission measurements on the high purity crystals. It is also found that the Sb-doped melt grown crystal had good power factor around room temperature (26μWcm-1K-2 at 270 K).
| Original language | English |
|---|---|
| Article number | 07JB06 |
| Journal | Japanese Journal of Applied Physics |
| Volume | 54 |
| Issue number | 7 |
| DOIs | |
| Publication status | Published - Jul 1 2015 |
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All Science Journal Classification (ASJC) codes
- Engineering(all)
- Physics and Astronomy(all)
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Crystal growth and characterization of Mg2Si for IR-detectors and thermoelectric applications. / Udono, Haruhiko; Tajima, Hiroyuki; Uchikoshi, Masahito; Itakura, Masaru.
In: Japanese Journal of Applied Physics, Vol. 54, No. 7, 07JB06, 01.07.2015.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Crystal growth and characterization of Mg2Si for IR-detectors and thermoelectric applications
AU - Udono, Haruhiko
AU - Tajima, Hiroyuki
AU - Uchikoshi, Masahito
AU - Itakura, Masaru
PY - 2015/7/1
Y1 - 2015/7/1
N2 - We have investigated the melt growth of Mg2Si crystal and its electrical and optical properties. Progress in Mg source purity and stoichiometric control during the growth enabled the development of a high purity Mg2Si crystal with low carrier density and a high stable Mg2Si with good doping controllability. The Mg2Si crystal grown by the pressure controlled Bridgman method using 5N purity or 6N purity of Mg source and purified PG crucible showed low electron density (∼1015cm-3) and high electron mobility (485cm2V-1 s-1 at 300K and 21900 cm2V-1 s-1 at 40 K). Silver doping in the high purity crystals performed the low-hole density of p-type Mg2Si (∼3 × 1016cm-3). Ionization energy of residual Al donor in the high purity crystal and Ag acceptor in the Ag doped crystals was determined as 8-9meV and 26meV, respectively. Indirect band gap energy Eg of approximately 0.61 eV at 300K and 0.69 eV at 4K were estimated by the optical transmission measurements on the high purity crystals. It is also found that the Sb-doped melt grown crystal had good power factor around room temperature (26μWcm-1K-2 at 270 K).
AB - We have investigated the melt growth of Mg2Si crystal and its electrical and optical properties. Progress in Mg source purity and stoichiometric control during the growth enabled the development of a high purity Mg2Si crystal with low carrier density and a high stable Mg2Si with good doping controllability. The Mg2Si crystal grown by the pressure controlled Bridgman method using 5N purity or 6N purity of Mg source and purified PG crucible showed low electron density (∼1015cm-3) and high electron mobility (485cm2V-1 s-1 at 300K and 21900 cm2V-1 s-1 at 40 K). Silver doping in the high purity crystals performed the low-hole density of p-type Mg2Si (∼3 × 1016cm-3). Ionization energy of residual Al donor in the high purity crystal and Ag acceptor in the Ag doped crystals was determined as 8-9meV and 26meV, respectively. Indirect band gap energy Eg of approximately 0.61 eV at 300K and 0.69 eV at 4K were estimated by the optical transmission measurements on the high purity crystals. It is also found that the Sb-doped melt grown crystal had good power factor around room temperature (26μWcm-1K-2 at 270 K).
UR - http://www.scopus.com/inward/record.url?scp=84936773633&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84936773633&partnerID=8YFLogxK
U2 - 10.7567/JJAP.54.07JB06
DO - 10.7567/JJAP.54.07JB06
M3 - Article
AN - SCOPUS:84936773633
VL - 54
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 7
M1 - 07JB06
ER -