Crystal growth and device applications of two-dimensional layered materials

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Two-dimensional (2D) layered materials have unique structural and electronic properties, which attract a great interest due to scientific novelty as well as many promising applications. In this talk, our recent progress of 2D materials research is reviewed mainly on the synthesis and characterizations of graphene and related 2D materials. Our studies on 2D heterostructures will be also discussed.

Original languageEnglish
Title of host publicationAM-FPD 2017 - 24th International Workshop on Active-Matrix Flatpanel Displays and Devices
Subtitle of host publicationTFT Technologies and FPD Materials, Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages86-87
Number of pages2
ISBN (Electronic)9784990875336
Publication statusPublished - Aug 8 2017
Event24th International Workshop on Active-Matrix Flatpanel Displays and Devices, AM-FPD 2017 - Kyoto, Japan
Duration: Jul 4 2017Jul 7 2017

Publication series

NameAM-FPD 2017 - 24th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, Proceedings

Other

Other24th International Workshop on Active-Matrix Flatpanel Displays and Devices, AM-FPD 2017
CountryJapan
CityKyoto
Period7/4/177/7/17

Fingerprint

Crystal growth
Electronic properties
Graphene
Heterojunctions
Structural properties

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Computational Theory and Mathematics

Cite this

Ago, H. (2017). Crystal growth and device applications of two-dimensional layered materials. In AM-FPD 2017 - 24th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, Proceedings (pp. 86-87). [8006085] (AM-FPD 2017 - 24th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, Proceedings). Institute of Electrical and Electronics Engineers Inc..

Crystal growth and device applications of two-dimensional layered materials. / Ago, Hiroki.

AM-FPD 2017 - 24th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, Proceedings. Institute of Electrical and Electronics Engineers Inc., 2017. p. 86-87 8006085 (AM-FPD 2017 - 24th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, Proceedings).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Ago, H 2017, Crystal growth and device applications of two-dimensional layered materials. in AM-FPD 2017 - 24th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, Proceedings., 8006085, AM-FPD 2017 - 24th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, Proceedings, Institute of Electrical and Electronics Engineers Inc., pp. 86-87, 24th International Workshop on Active-Matrix Flatpanel Displays and Devices, AM-FPD 2017, Kyoto, Japan, 7/4/17.
Ago H. Crystal growth and device applications of two-dimensional layered materials. In AM-FPD 2017 - 24th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, Proceedings. Institute of Electrical and Electronics Engineers Inc. 2017. p. 86-87. 8006085. (AM-FPD 2017 - 24th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, Proceedings).
Ago, Hiroki. / Crystal growth and device applications of two-dimensional layered materials. AM-FPD 2017 - 24th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, Proceedings. Institute of Electrical and Electronics Engineers Inc., 2017. pp. 86-87 (AM-FPD 2017 - 24th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, Proceedings).
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