Crystal growth of 50 cm square mono-like Si by directional solidification and its characterization

Y. Miyamura, H. Harada, K. Jiptner, J. Chen, R. R. Prakash, S. Nakano, B. Gao, K. Kakimoto, T. Sekiguchi

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Abstract

Seed-assisted growth of mono crystalline-like Silicon (mono-like Si) ingots of 50 cm square has been performed. By controlling the shape of the liquid-solid interface, a mono-like crystal was grown from a small seed of 20 cm diameter. Several developments to reduce the carbon incorporation have been realized as can be seen from the shiny ingot surfaces. The dislocation density is reduced to the order of 104cm-2.

Original languageEnglish
Pages (from-to)133-136
Number of pages4
JournalJournal of Crystal Growth
Volume401
DOIs
Publication statusPublished - Sep 1 2014

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All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

Cite this

Miyamura, Y., Harada, H., Jiptner, K., Chen, J., Prakash, R. R., Nakano, S., ... Sekiguchi, T. (2014). Crystal growth of 50 cm square mono-like Si by directional solidification and its characterization. Journal of Crystal Growth, 401, 133-136. https://doi.org/10.1016/j.jcrysgro.2014.03.016