TY - JOUR
T1 - Crystal growth of 50 cm square mono-like Si by directional solidification and its characterization
AU - Miyamura, Y.
AU - Harada, H.
AU - Jiptner, K.
AU - Chen, J.
AU - Prakash, R. R.
AU - Nakano, S.
AU - Gao, B.
AU - Kakimoto, Koichi
AU - Sekiguchi, T.
N1 - Funding Information:
This work was partly supported by the New Energy and Industrial Technology Development Organization (NEDO) under the Ministry of Economy, Trade and Industry (METI).
Publisher Copyright:
© 2014 Elsevier B.V.
PY - 2014/9/1
Y1 - 2014/9/1
N2 - Seed-assisted growth of mono crystalline-like Silicon (mono-like Si) ingots of 50 cm square has been performed. By controlling the shape of the liquid-solid interface, a mono-like crystal was grown from a small seed of 20 cm diameter. Several developments to reduce the carbon incorporation have been realized as can be seen from the shiny ingot surfaces. The dislocation density is reduced to the order of 104cm-2.
AB - Seed-assisted growth of mono crystalline-like Silicon (mono-like Si) ingots of 50 cm square has been performed. By controlling the shape of the liquid-solid interface, a mono-like crystal was grown from a small seed of 20 cm diameter. Several developments to reduce the carbon incorporation have been realized as can be seen from the shiny ingot surfaces. The dislocation density is reduced to the order of 104cm-2.
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U2 - 10.1016/j.jcrysgro.2014.03.016
DO - 10.1016/j.jcrysgro.2014.03.016
M3 - Article
AN - SCOPUS:84906966236
SN - 0022-0248
VL - 401
SP - 133
EP - 136
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
ER -