Crystal growth of 50 cm square mono-like Si by directional solidification and its characterization

Y. Miyamura, H. Harada, K. Jiptner, J. Chen, R. R. Prakash, S. Nakano, B. Gao, Koichi Kakimoto, T. Sekiguchi

Research output: Contribution to journalArticle

17 Citations (Scopus)

Abstract

Seed-assisted growth of mono crystalline-like Silicon (mono-like Si) ingots of 50 cm square has been performed. By controlling the shape of the liquid-solid interface, a mono-like crystal was grown from a small seed of 20 cm diameter. Several developments to reduce the carbon incorporation have been realized as can be seen from the shiny ingot surfaces. The dislocation density is reduced to the order of 104cm-2.

Original languageEnglish
Pages (from-to)133-136
Number of pages4
JournalJournal of Crystal Growth
Volume401
DOIs
Publication statusPublished - Sep 1 2014

Fingerprint

ingots
Silicon
Ingots
Crystallization
Crystal growth
Solidification
Seed
crystal growth
seeds
Crystalline materials
silicon
liquid-solid interfaces
Carbon
Crystals
carbon
Liquids
crystals

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

Cite this

Miyamura, Y., Harada, H., Jiptner, K., Chen, J., Prakash, R. R., Nakano, S., ... Sekiguchi, T. (2014). Crystal growth of 50 cm square mono-like Si by directional solidification and its characterization. Journal of Crystal Growth, 401, 133-136. https://doi.org/10.1016/j.jcrysgro.2014.03.016

Crystal growth of 50 cm square mono-like Si by directional solidification and its characterization. / Miyamura, Y.; Harada, H.; Jiptner, K.; Chen, J.; Prakash, R. R.; Nakano, S.; Gao, B.; Kakimoto, Koichi; Sekiguchi, T.

In: Journal of Crystal Growth, Vol. 401, 01.09.2014, p. 133-136.

Research output: Contribution to journalArticle

Miyamura, Y, Harada, H, Jiptner, K, Chen, J, Prakash, RR, Nakano, S, Gao, B, Kakimoto, K & Sekiguchi, T 2014, 'Crystal growth of 50 cm square mono-like Si by directional solidification and its characterization', Journal of Crystal Growth, vol. 401, pp. 133-136. https://doi.org/10.1016/j.jcrysgro.2014.03.016
Miyamura, Y. ; Harada, H. ; Jiptner, K. ; Chen, J. ; Prakash, R. R. ; Nakano, S. ; Gao, B. ; Kakimoto, Koichi ; Sekiguchi, T. / Crystal growth of 50 cm square mono-like Si by directional solidification and its characterization. In: Journal of Crystal Growth. 2014 ; Vol. 401. pp. 133-136.
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