Crystal growth of high-purity multicrystalline silicon using a unidirectional solidification furnace for solar cells

B. Gao, X. J. Chen, S. Nakano, Koichi Kakimoto

Research output: Contribution to journalArticle

70 Citations (Scopus)

Abstract

An improved furnace was designed to reduce the carbon impurity of multicrystalline silicon at unidirectional solidification process. Global simulations of oxygen and carbon transport in the improved furnace showed that the carbon concentration in the crystal can be reduced to a negligible value in the order of 1014 atom/cm3; simultaneously, the oxygen concentration in the crystal can also be reduced by at least 30%. Therefore, the present design can markedly reduce the back transfer of CO from graphite components of the furnace.

Original languageEnglish
Pages (from-to)1572-1576
Number of pages5
JournalJournal of Crystal Growth
Volume312
Issue number9
DOIs
Publication statusPublished - Apr 15 2010

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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