Crystal growth of high-purity multicrystalline silicon using a unidirectional solidification furnace for solar cells

B. Gao, X. J. Chen, S. Nakano, Koichi Kakimoto

Research output: Contribution to journalArticle

66 Citations (Scopus)

Abstract

An improved furnace was designed to reduce the carbon impurity of multicrystalline silicon at unidirectional solidification process. Global simulations of oxygen and carbon transport in the improved furnace showed that the carbon concentration in the crystal can be reduced to a negligible value in the order of 1014 atom/cm3; simultaneously, the oxygen concentration in the crystal can also be reduced by at least 30%. Therefore, the present design can markedly reduce the back transfer of CO from graphite components of the furnace.

Original languageEnglish
Pages (from-to)1572-1576
Number of pages5
JournalJournal of Crystal Growth
Volume312
Issue number9
DOIs
Publication statusPublished - Apr 15 2010

Fingerprint

Silicon
Crystallization
Crystal growth
solidification
furnaces
Solidification
crystal growth
Solar cells
purity
Furnaces
Carbon
solar cells
carbon
silicon
Oxygen
Crystals
Graphite
oxygen
Carbon Monoxide
crystals

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

Cite this

Crystal growth of high-purity multicrystalline silicon using a unidirectional solidification furnace for solar cells. / Gao, B.; Chen, X. J.; Nakano, S.; Kakimoto, Koichi.

In: Journal of Crystal Growth, Vol. 312, No. 9, 15.04.2010, p. 1572-1576.

Research output: Contribution to journalArticle

@article{d97018345aaa41cfba7c75ca9689998e,
title = "Crystal growth of high-purity multicrystalline silicon using a unidirectional solidification furnace for solar cells",
abstract = "An improved furnace was designed to reduce the carbon impurity of multicrystalline silicon at unidirectional solidification process. Global simulations of oxygen and carbon transport in the improved furnace showed that the carbon concentration in the crystal can be reduced to a negligible value in the order of 1014 atom/cm3; simultaneously, the oxygen concentration in the crystal can also be reduced by at least 30{\%}. Therefore, the present design can markedly reduce the back transfer of CO from graphite components of the furnace.",
author = "B. Gao and Chen, {X. J.} and S. Nakano and Koichi Kakimoto",
year = "2010",
month = "4",
day = "15",
doi = "10.1016/j.jcrysgro.2010.01.034",
language = "English",
volume = "312",
pages = "1572--1576",
journal = "Journal of Crystal Growth",
issn = "0022-0248",
publisher = "Elsevier",
number = "9",

}

TY - JOUR

T1 - Crystal growth of high-purity multicrystalline silicon using a unidirectional solidification furnace for solar cells

AU - Gao, B.

AU - Chen, X. J.

AU - Nakano, S.

AU - Kakimoto, Koichi

PY - 2010/4/15

Y1 - 2010/4/15

N2 - An improved furnace was designed to reduce the carbon impurity of multicrystalline silicon at unidirectional solidification process. Global simulations of oxygen and carbon transport in the improved furnace showed that the carbon concentration in the crystal can be reduced to a negligible value in the order of 1014 atom/cm3; simultaneously, the oxygen concentration in the crystal can also be reduced by at least 30%. Therefore, the present design can markedly reduce the back transfer of CO from graphite components of the furnace.

AB - An improved furnace was designed to reduce the carbon impurity of multicrystalline silicon at unidirectional solidification process. Global simulations of oxygen and carbon transport in the improved furnace showed that the carbon concentration in the crystal can be reduced to a negligible value in the order of 1014 atom/cm3; simultaneously, the oxygen concentration in the crystal can also be reduced by at least 30%. Therefore, the present design can markedly reduce the back transfer of CO from graphite components of the furnace.

UR - http://www.scopus.com/inward/record.url?scp=77949912393&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=77949912393&partnerID=8YFLogxK

U2 - 10.1016/j.jcrysgro.2010.01.034

DO - 10.1016/j.jcrysgro.2010.01.034

M3 - Article

AN - SCOPUS:77949912393

VL - 312

SP - 1572

EP - 1576

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

SN - 0022-0248

IS - 9

ER -