We have investigated crystallization processes during excimer laser annealing of silicon (Si) thin films on glass by molecular-dynamics simulations and laser power dependence of the polycrystalline Si grain size was discussed. The temperature range for the highest growth rate was found to be approximately 500 degrees higher than that for the highest nucleation rate. It was also found that a steady state temperature gradient was obtained in the direction of the surface normal during laser irradiation. These results suggest that nucleation occurs in the Si/glass interface region and then crystallization proceed toward the high temperature region during laser irradiation in the near-complete melting condition.
|Number of pages||3|
|Journal||Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers|
|Issue number||5 B|
|Publication status||Published - May 25 2006|
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)