Crystal-melt interface shape and dislocations during the melting of silicon

Yuren Wang, Koichi Kakimoto

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

In situ observations on the melting processes of non-doped silicon were carried out by X-ray topography method. The dislocation-free melting process was successfully obtained through the appropriate accommodation of the shapes of sample and heaters. To clarify the dislocation effect on the melting process, the melting process with an isolated dislocation in the melting zone was studied. It is shown that the melting processes with and without an isolated dislocation are different for the non-doped silicon crystal. The crystal-melt interface shape is estimated from the digitized contrast of the topography image. The crystal-melt interface shape is kept flat in the dislocation-free melting process, while the interface shape is rough in the melting process with an isolated dislocation in the molten zone.

Original languageEnglish
Pages (from-to)1-12
Number of pages12
JournalJournal of Crystal Growth
Volume247
Issue number1-2
DOIs
Publication statusPublished - Jan 1 2003

Fingerprint

Silicon
Dislocations (crystals)
Melting
melting
Crystals
silicon
crystals
Topography
topography
Zone melting
zone melting
accommodation
heaters
Molten materials
X rays
x rays

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

Cite this

Crystal-melt interface shape and dislocations during the melting of silicon. / Wang, Yuren; Kakimoto, Koichi.

In: Journal of Crystal Growth, Vol. 247, No. 1-2, 01.01.2003, p. 1-12.

Research output: Contribution to journalArticle

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