We proposed SiGe mixing triggered melting growth, and realized (100)-oriented Ge on insulator (GOI) stripes (〜400μm) by using Si(100) substrates as crystal seed. To expand the application fields of such GOI structures, GOI stripes with various crystal orientations should be achieved. In the present study, growth-direction-dependent characteristics of GOI from Si(100), (110), (111) seeding substrates are investigated. During the study, we encountered a phenomenon of rotating growth of Ge layers. The detail of the rotation growth is investigated, and a guideline to prevent this phenomenon is clarified. As a results, GOI(110) and (111) stripes without the rotation are realized, together with GOI(100) stripes. Moreover, a large mesh (500μm × 250μm) of GOI stripe is realized based on these findings.
|Translated title of the contribution||Crystal Orientation Dependent Growth Features of Ge-on-Insulator by SiGe Mixing Triggered Melting Process|
|Number of pages||4|
|Journal||IEICE technical report|
|Publication status||Published - Apr 16 2010|