SiGeミキシング誘起溶融法による単結晶GOI (Ge on Insulator) 形成のシード基板面方位・成長方向依存性

Translated title of the contribution: Crystal Orientation Dependent Growth Features of Ge-on-Insulator by SiGe Mixing Triggered Melting Process

大田 康晴, 田中 貴規, 佐道 泰造, 宮尾 正信

Research output: Contribution to journalArticlepeer-review

Abstract

We proposed SiGe mixing triggered melting growth, and realized (100)-oriented Ge on insulator (GOI) stripes (〜400μm) by using Si(100) substrates as crystal seed. To expand the application fields of such GOI structures, GOI stripes with various crystal orientations should be achieved. In the present study, growth-direction-dependent characteristics of GOI from Si(100), (110), (111) seeding substrates are investigated. During the study, we encountered a phenomenon of rotating growth of Ge layers. The detail of the rotation growth is investigated, and a guideline to prevent this phenomenon is clarified. As a results, GOI(110) and (111) stripes without the rotation are realized, together with GOI(100) stripes. Moreover, a large mesh (500μm × 250μm) of GOI stripe is realized based on these findings.
Translated title of the contributionCrystal Orientation Dependent Growth Features of Ge-on-Insulator by SiGe Mixing Triggered Melting Process
Original languageJapanese
Pages (from-to)49-52
Number of pages4
JournalIEICE technical report
Volume110
Issue number16
Publication statusPublished - Apr 16 2010

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