TY - JOUR
T1 - Crystal orientation effect on spin injection/detection efficiency in Si lateral spin-valve devices
AU - Ishikawa, Mizue
AU - Tsukahara, Makoto
AU - Honda, Syuta
AU - Fujita, Yuichi
AU - Yamada, Michihiro
AU - Saito, Yoshiaki
AU - Kimura, Takashi
AU - Itoh, Hiroyoshi
AU - Hamaya, Kohei
N1 - Funding Information:
M I and K H acknowledge Dr H Sugiyama of Toshiba Corporation for useful discussion about the pure spin current transport in Si and the magnetocrystalline anisotropy of the CoFe layer on MgO/(0 0 1)SOI, respectively. This work was partly supported by a Grant-in-Aid for Scientific Research (A) (No. 16H02333) from the Japan Society for the Promotion of Science (JSPS), and a Grant-in-Aid for Scientific Research on Innovative Areas ‘Nano Spin Conversion Science’ (Nos. 26103002 and 26103003) from the Ministry of Education, Culture, Sports, Science, and Technology (MEXT).
PY - 2019/2/20
Y1 - 2019/2/20
N2 - We show evident crystal orientation effect on pure spin current transport in Si-based lateral spin-valve (LSV) devices with epitaxially grown CoFe/MgO tunnel contacts. When we compare nonlocal spin signals between LSV devices along 1 0 0 (Si1 0 0) and 1 1 0 (Si1 1 0), we find that the magnitude of the spin signals for Si1 0 0 LSV devices is always larger than that for Si1 1 0 LSV devices. The analyses based on the one-dimensional spin diffusion model reveal that the spin diffusion length and spin lifetime between Si1 0 0 and Si1 1 0 LSV devices are comparable, while the spin injection/detection efficiency in Si1 0 0 LSV devices is evidently larger than that in Si1 1 0 ones. Possible origins of the difference in the spin injection/detection efficiency between Si1 0 0 and Si1 1 0 LSV devices are discussed.
AB - We show evident crystal orientation effect on pure spin current transport in Si-based lateral spin-valve (LSV) devices with epitaxially grown CoFe/MgO tunnel contacts. When we compare nonlocal spin signals between LSV devices along 1 0 0 (Si1 0 0) and 1 1 0 (Si1 1 0), we find that the magnitude of the spin signals for Si1 0 0 LSV devices is always larger than that for Si1 1 0 LSV devices. The analyses based on the one-dimensional spin diffusion model reveal that the spin diffusion length and spin lifetime between Si1 0 0 and Si1 1 0 LSV devices are comparable, while the spin injection/detection efficiency in Si1 0 0 LSV devices is evidently larger than that in Si1 1 0 ones. Possible origins of the difference in the spin injection/detection efficiency between Si1 0 0 and Si1 1 0 LSV devices are discussed.
UR - http://www.scopus.com/inward/record.url?scp=85059851216&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85059851216&partnerID=8YFLogxK
U2 - 10.1088/1361-6463/aaf37c
DO - 10.1088/1361-6463/aaf37c
M3 - Article
AN - SCOPUS:85059851216
VL - 52
JO - Journal Physics D: Applied Physics
JF - Journal Physics D: Applied Physics
SN - 0022-3727
IS - 8
M1 - 085102
ER -