Crystal orientation effect on spin injection/detection efficiency in Si lateral spin-valve devices

Mizue Ishikawa, Makoto Tsukahara, Syuta Honda, Yuichi Fujita, Michihiro Yamada, Yoshiaki Saito, Takashi Kimura, Hiroyoshi Itoh, Kohei Hamaya

Research output: Contribution to journalArticle

Abstract

We show evident crystal orientation effect on pure spin current transport in Si-based lateral spin-valve (LSV) devices with epitaxially grown CoFe/MgO tunnel contacts. When we compare nonlocal spin signals between LSV devices along 1 0 0 (Si1 0 0) and 1 1 0 (Si1 1 0), we find that the magnitude of the spin signals for Si1 0 0 LSV devices is always larger than that for Si1 1 0 LSV devices. The analyses based on the one-dimensional spin diffusion model reveal that the spin diffusion length and spin lifetime between Si1 0 0 and Si1 1 0 LSV devices are comparable, while the spin injection/detection efficiency in Si1 0 0 LSV devices is evidently larger than that in Si1 1 0 ones. Possible origins of the difference in the spin injection/detection efficiency between Si1 0 0 and Si1 1 0 LSV devices are discussed.

Original languageEnglish
Article number085102
JournalJournal of Physics D: Applied Physics
Volume52
Issue number8
DOIs
Publication statusPublished - Feb 20 2019

Fingerprint

Crystal orientation
injection
crystals
Tunnels
diffusion length
tunnels

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Acoustics and Ultrasonics
  • Surfaces, Coatings and Films

Cite this

Ishikawa, M., Tsukahara, M., Honda, S., Fujita, Y., Yamada, M., Saito, Y., ... Hamaya, K. (2019). Crystal orientation effect on spin injection/detection efficiency in Si lateral spin-valve devices. Journal of Physics D: Applied Physics, 52(8), [085102]. https://doi.org/10.1088/1361-6463/aaf37c

Crystal orientation effect on spin injection/detection efficiency in Si lateral spin-valve devices. / Ishikawa, Mizue; Tsukahara, Makoto; Honda, Syuta; Fujita, Yuichi; Yamada, Michihiro; Saito, Yoshiaki; Kimura, Takashi; Itoh, Hiroyoshi; Hamaya, Kohei.

In: Journal of Physics D: Applied Physics, Vol. 52, No. 8, 085102, 20.02.2019.

Research output: Contribution to journalArticle

Ishikawa, M, Tsukahara, M, Honda, S, Fujita, Y, Yamada, M, Saito, Y, Kimura, T, Itoh, H & Hamaya, K 2019, 'Crystal orientation effect on spin injection/detection efficiency in Si lateral spin-valve devices', Journal of Physics D: Applied Physics, vol. 52, no. 8, 085102. https://doi.org/10.1088/1361-6463/aaf37c
Ishikawa, Mizue ; Tsukahara, Makoto ; Honda, Syuta ; Fujita, Yuichi ; Yamada, Michihiro ; Saito, Yoshiaki ; Kimura, Takashi ; Itoh, Hiroyoshi ; Hamaya, Kohei. / Crystal orientation effect on spin injection/detection efficiency in Si lateral spin-valve devices. In: Journal of Physics D: Applied Physics. 2019 ; Vol. 52, No. 8.
@article{e3fdcca4df514e3facf037ca640d8ef0,
title = "Crystal orientation effect on spin injection/detection efficiency in Si lateral spin-valve devices",
abstract = "We show evident crystal orientation effect on pure spin current transport in Si-based lateral spin-valve (LSV) devices with epitaxially grown CoFe/MgO tunnel contacts. When we compare nonlocal spin signals between LSV devices along 1 0 0 (Si1 0 0) and 1 1 0 (Si1 1 0), we find that the magnitude of the spin signals for Si1 0 0 LSV devices is always larger than that for Si1 1 0 LSV devices. The analyses based on the one-dimensional spin diffusion model reveal that the spin diffusion length and spin lifetime between Si1 0 0 and Si1 1 0 LSV devices are comparable, while the spin injection/detection efficiency in Si1 0 0 LSV devices is evidently larger than that in Si1 1 0 ones. Possible origins of the difference in the spin injection/detection efficiency between Si1 0 0 and Si1 1 0 LSV devices are discussed.",
author = "Mizue Ishikawa and Makoto Tsukahara and Syuta Honda and Yuichi Fujita and Michihiro Yamada and Yoshiaki Saito and Takashi Kimura and Hiroyoshi Itoh and Kohei Hamaya",
year = "2019",
month = "2",
day = "20",
doi = "10.1088/1361-6463/aaf37c",
language = "English",
volume = "52",
journal = "Journal Physics D: Applied Physics",
issn = "0022-3727",
publisher = "IOP Publishing Ltd.",
number = "8",

}

TY - JOUR

T1 - Crystal orientation effect on spin injection/detection efficiency in Si lateral spin-valve devices

AU - Ishikawa, Mizue

AU - Tsukahara, Makoto

AU - Honda, Syuta

AU - Fujita, Yuichi

AU - Yamada, Michihiro

AU - Saito, Yoshiaki

AU - Kimura, Takashi

AU - Itoh, Hiroyoshi

AU - Hamaya, Kohei

PY - 2019/2/20

Y1 - 2019/2/20

N2 - We show evident crystal orientation effect on pure spin current transport in Si-based lateral spin-valve (LSV) devices with epitaxially grown CoFe/MgO tunnel contacts. When we compare nonlocal spin signals between LSV devices along 1 0 0 (Si1 0 0) and 1 1 0 (Si1 1 0), we find that the magnitude of the spin signals for Si1 0 0 LSV devices is always larger than that for Si1 1 0 LSV devices. The analyses based on the one-dimensional spin diffusion model reveal that the spin diffusion length and spin lifetime between Si1 0 0 and Si1 1 0 LSV devices are comparable, while the spin injection/detection efficiency in Si1 0 0 LSV devices is evidently larger than that in Si1 1 0 ones. Possible origins of the difference in the spin injection/detection efficiency between Si1 0 0 and Si1 1 0 LSV devices are discussed.

AB - We show evident crystal orientation effect on pure spin current transport in Si-based lateral spin-valve (LSV) devices with epitaxially grown CoFe/MgO tunnel contacts. When we compare nonlocal spin signals between LSV devices along 1 0 0 (Si1 0 0) and 1 1 0 (Si1 1 0), we find that the magnitude of the spin signals for Si1 0 0 LSV devices is always larger than that for Si1 1 0 LSV devices. The analyses based on the one-dimensional spin diffusion model reveal that the spin diffusion length and spin lifetime between Si1 0 0 and Si1 1 0 LSV devices are comparable, while the spin injection/detection efficiency in Si1 0 0 LSV devices is evidently larger than that in Si1 1 0 ones. Possible origins of the difference in the spin injection/detection efficiency between Si1 0 0 and Si1 1 0 LSV devices are discussed.

UR - http://www.scopus.com/inward/record.url?scp=85059851216&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85059851216&partnerID=8YFLogxK

U2 - 10.1088/1361-6463/aaf37c

DO - 10.1088/1361-6463/aaf37c

M3 - Article

VL - 52

JO - Journal Physics D: Applied Physics

JF - Journal Physics D: Applied Physics

SN - 0022-3727

IS - 8

M1 - 085102

ER -