Abstract
We show evident crystal orientation effect on pure spin current transport in Si-based lateral spin-valve (LSV) devices with epitaxially grown CoFe/MgO tunnel contacts. When we compare nonlocal spin signals between LSV devices along 1 0 0 (Si1 0 0) and 1 1 0 (Si1 1 0), we find that the magnitude of the spin signals for Si1 0 0 LSV devices is always larger than that for Si1 1 0 LSV devices. The analyses based on the one-dimensional spin diffusion model reveal that the spin diffusion length and spin lifetime between Si1 0 0 and Si1 1 0 LSV devices are comparable, while the spin injection/detection efficiency in Si1 0 0 LSV devices is evidently larger than that in Si1 1 0 ones. Possible origins of the difference in the spin injection/detection efficiency between Si1 0 0 and Si1 1 0 LSV devices are discussed.
| Original language | English |
|---|---|
| Article number | 085102 |
| Journal | Journal of Physics D: Applied Physics |
| Volume | 52 |
| Issue number | 8 |
| DOIs | |
| Publication status | Published - Feb 20 2019 |
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All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Acoustics and Ultrasonics
- Surfaces, Coatings and Films
Cite this
Crystal orientation effect on spin injection/detection efficiency in Si lateral spin-valve devices. / Ishikawa, Mizue; Tsukahara, Makoto; Honda, Syuta; Fujita, Yuichi; Yamada, Michihiro; Saito, Yoshiaki; Kimura, Takashi; Itoh, Hiroyoshi; Hamaya, Kohei.
In: Journal of Physics D: Applied Physics, Vol. 52, No. 8, 085102, 20.02.2019.Research output: Contribution to journal › Article
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TY - JOUR
T1 - Crystal orientation effect on spin injection/detection efficiency in Si lateral spin-valve devices
AU - Ishikawa, Mizue
AU - Tsukahara, Makoto
AU - Honda, Syuta
AU - Fujita, Yuichi
AU - Yamada, Michihiro
AU - Saito, Yoshiaki
AU - Kimura, Takashi
AU - Itoh, Hiroyoshi
AU - Hamaya, Kohei
PY - 2019/2/20
Y1 - 2019/2/20
N2 - We show evident crystal orientation effect on pure spin current transport in Si-based lateral spin-valve (LSV) devices with epitaxially grown CoFe/MgO tunnel contacts. When we compare nonlocal spin signals between LSV devices along 1 0 0 (Si1 0 0) and 1 1 0 (Si1 1 0), we find that the magnitude of the spin signals for Si1 0 0 LSV devices is always larger than that for Si1 1 0 LSV devices. The analyses based on the one-dimensional spin diffusion model reveal that the spin diffusion length and spin lifetime between Si1 0 0 and Si1 1 0 LSV devices are comparable, while the spin injection/detection efficiency in Si1 0 0 LSV devices is evidently larger than that in Si1 1 0 ones. Possible origins of the difference in the spin injection/detection efficiency between Si1 0 0 and Si1 1 0 LSV devices are discussed.
AB - We show evident crystal orientation effect on pure spin current transport in Si-based lateral spin-valve (LSV) devices with epitaxially grown CoFe/MgO tunnel contacts. When we compare nonlocal spin signals between LSV devices along 1 0 0 (Si1 0 0) and 1 1 0 (Si1 1 0), we find that the magnitude of the spin signals for Si1 0 0 LSV devices is always larger than that for Si1 1 0 LSV devices. The analyses based on the one-dimensional spin diffusion model reveal that the spin diffusion length and spin lifetime between Si1 0 0 and Si1 1 0 LSV devices are comparable, while the spin injection/detection efficiency in Si1 0 0 LSV devices is evidently larger than that in Si1 1 0 ones. Possible origins of the difference in the spin injection/detection efficiency between Si1 0 0 and Si1 1 0 LSV devices are discussed.
UR - http://www.scopus.com/inward/record.url?scp=85059851216&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85059851216&partnerID=8YFLogxK
U2 - 10.1088/1361-6463/aaf37c
DO - 10.1088/1361-6463/aaf37c
M3 - Article
AN - SCOPUS:85059851216
VL - 52
JO - Journal Physics D: Applied Physics
JF - Journal Physics D: Applied Physics
SN - 0022-3727
IS - 8
M1 - 085102
ER -