Crystal-plane dependence of critical concentration for nucleation on hydrothermal ZnO nanowires

Yong He, Takeshi Yanagida, Kazuki Nagashima, Fuwei Zhuge, Gang Meng, Bo Xu, Annop Klamchuen, Sakon Rahong, Masaki Kanai, Xiaomin Li, Masaru Suzuki, Shoichi Kai, Tomoji Kawai

Research output: Contribution to journalArticlepeer-review

39 Citations (Scopus)

Abstract

Hydrothermal ZnO nanowires have shown great potential for various nanoscale device applications due to their fascinating properties and low-temperature processing. A preferential crystal growth of ZnO (0001) polar plane is essential and fundamental to realize the anisotropic nanowire growth. Here we demonstrate that a critical concentration for a nucleation strongly depends on a crystal plane, which plays an important role on an anisotropic growth of hydrothermal ZnO nanowires. We measure a growth rate of each crystal plane when varying a concentration of Zn ionic species by using a regular array structure. Selective anisotropic growth on (0001) plane emerges within a certain concentration range. Above the concentration range, a crystal growth on (101Ì..0) plane tends to simultaneously occur. This strong concentration dependence on the crystal plane is understood in terms of a critical concentration difference between (0001) plane and (101Ì..0) plane, which is related to the surface energy difference between the crystal planes.

Original languageEnglish
Pages (from-to)1197-1203
Number of pages7
JournalJournal of Physical Chemistry C
Volume117
Issue number2
DOIs
Publication statusPublished - Jan 17 2013
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Energy(all)
  • Physical and Theoretical Chemistry
  • Surfaces, Coatings and Films

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