Crystal quality of a 6H-SiC layer grown over macrodefects by liquid-phase epitaxy: A Raman spectroscopic study

Toru Ujihara, Shinji Munetoh, Kazuhiko Kusunoki, Kazuhito Kamei, Noritaka Usami, Kozo Fujiwara, Gen Sazaki, Kazuo Nakajima

Research output: Contribution to journalArticle

25 Citations (Scopus)

Abstract

Liquid-phase epitaxial (LPE) growth on silicon carbide simultaneously covers macroscale defects, e.g. micropipes, and improves the quality of the crystal. In this study, an epi-layer grown over a macrodefect was evaluated by micro-Raman scattering spectroscopy. Before the growth process, the density of the stacking fault was high and the carrier density spatially inhomogeneous in the vicinity of the macrodefects. On the other hand, after growth, the layer over the macrodefect displayed good quality; the density of the stacking fault was less than that before growth and the homogeneity of the carrier density improved.

Original languageEnglish
Pages (from-to)206-209
Number of pages4
JournalThin Solid Films
Volume476
Issue number1
DOIs
Publication statusPublished - Apr 1 2005
Externally publishedYes

Fingerprint

Liquid phase epitaxy
liquid phase epitaxy
Stacking faults
Crystals
Carrier concentration
crystal defects
crystals
Silicon carbide
Raman scattering
Spectroscopy
silicon carbides
homogeneity
Defects
liquid phases
Raman spectra
defects
spectroscopy

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

Cite this

Crystal quality of a 6H-SiC layer grown over macrodefects by liquid-phase epitaxy : A Raman spectroscopic study. / Ujihara, Toru; Munetoh, Shinji; Kusunoki, Kazuhiko; Kamei, Kazuhito; Usami, Noritaka; Fujiwara, Kozo; Sazaki, Gen; Nakajima, Kazuo.

In: Thin Solid Films, Vol. 476, No. 1, 01.04.2005, p. 206-209.

Research output: Contribution to journalArticle

Ujihara, T, Munetoh, S, Kusunoki, K, Kamei, K, Usami, N, Fujiwara, K, Sazaki, G & Nakajima, K 2005, 'Crystal quality of a 6H-SiC layer grown over macrodefects by liquid-phase epitaxy: A Raman spectroscopic study', Thin Solid Films, vol. 476, no. 1, pp. 206-209. https://doi.org/10.1016/j.tsf.2004.09.039
Ujihara, Toru ; Munetoh, Shinji ; Kusunoki, Kazuhiko ; Kamei, Kazuhito ; Usami, Noritaka ; Fujiwara, Kozo ; Sazaki, Gen ; Nakajima, Kazuo. / Crystal quality of a 6H-SiC layer grown over macrodefects by liquid-phase epitaxy : A Raman spectroscopic study. In: Thin Solid Films. 2005 ; Vol. 476, No. 1. pp. 206-209.
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