TY - JOUR
T1 - Crystal quality of a 6H-SiC layer grown over macrodefects by liquid-phase epitaxy
T2 - A Raman spectroscopic study
AU - Ujihara, Toru
AU - Munetoh, Shinji
AU - Kusunoki, Kazuhiko
AU - Kamei, Kazuhito
AU - Usami, Noritaka
AU - Fujiwara, Kozo
AU - Sazaki, Gen
AU - Nakajima, Kazuo
N1 - Funding Information:
The authors are grateful for support from the New Energy and Industrial Technology Development Organization (NEDO).
Copyright:
Copyright 2008 Elsevier B.V., All rights reserved.
PY - 2005/4/1
Y1 - 2005/4/1
N2 - Liquid-phase epitaxial (LPE) growth on silicon carbide simultaneously covers macroscale defects, e.g. micropipes, and improves the quality of the crystal. In this study, an epi-layer grown over a macrodefect was evaluated by micro-Raman scattering spectroscopy. Before the growth process, the density of the stacking fault was high and the carrier density spatially inhomogeneous in the vicinity of the macrodefects. On the other hand, after growth, the layer over the macrodefect displayed good quality; the density of the stacking fault was less than that before growth and the homogeneity of the carrier density improved.
AB - Liquid-phase epitaxial (LPE) growth on silicon carbide simultaneously covers macroscale defects, e.g. micropipes, and improves the quality of the crystal. In this study, an epi-layer grown over a macrodefect was evaluated by micro-Raman scattering spectroscopy. Before the growth process, the density of the stacking fault was high and the carrier density spatially inhomogeneous in the vicinity of the macrodefects. On the other hand, after growth, the layer over the macrodefect displayed good quality; the density of the stacking fault was less than that before growth and the homogeneity of the carrier density improved.
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U2 - 10.1016/j.tsf.2004.09.039
DO - 10.1016/j.tsf.2004.09.039
M3 - Article
AN - SCOPUS:13844306231
VL - 476
SP - 206
EP - 209
JO - Thin Solid Films
JF - Thin Solid Films
SN - 0040-6090
IS - 1
ER -