Crystal quality of a 6H-SiC layer grown over macrodefects by liquid-phase epitaxy: A Raman spectroscopic study

Toru Ujihara; Shinji Munetoh; Kazuhiko Kusunoki; Kazuhito Kamei; Noritaka Usami; Kozo Fujiwara; Gen Sazaki; Kazuo Nakajima

doi:10.1016/j.tsf.2004.09.039

Crystal quality of a 6H-SiC layer grown over macrodefects by liquid-phase epitaxy: A Raman spectroscopic study

Toru Ujihara, Shinji Munetoh, Kazuhiko Kusunoki, Kazuhito Kamei, Noritaka Usami, Kozo Fujiwara, Gen Sazaki, Kazuo Nakajima

Research output: Contribution to journal › Article › peer-review

26 Citations (Scopus)

Abstract

Liquid-phase epitaxial (LPE) growth on silicon carbide simultaneously covers macroscale defects, e.g. micropipes, and improves the quality of the crystal. In this study, an epi-layer grown over a macrodefect was evaluated by micro-Raman scattering spectroscopy. Before the growth process, the density of the stacking fault was high and the carrier density spatially inhomogeneous in the vicinity of the macrodefects. On the other hand, after growth, the layer over the macrodefect displayed good quality; the density of the stacking fault was less than that before growth and the homogeneity of the carrier density improved.

Original language	English
Pages (from-to)	206-209
Number of pages	4
Journal	Thin Solid Films
Volume	476
Issue number	1
DOIs	https://doi.org/10.1016/j.tsf.2004.09.039
Publication status	Published - Apr 1 2005
Externally published	Yes

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

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Crystal quality of a 6H-SiC layer grown over macrodefects by liquid-phase epitaxy : A Raman spectroscopic study. / Ujihara, Toru; Munetoh, Shinji; Kusunoki, Kazuhiko; Kamei, Kazuhito; Usami, Noritaka; Fujiwara, Kozo; Sazaki, Gen; Nakajima, Kazuo.

In: Thin Solid Films, Vol. 476, No. 1, 01.04.2005, p. 206-209.

Research output: Contribution to journal › Article › peer-review

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abstract = "Liquid-phase epitaxial (LPE) growth on silicon carbide simultaneously covers macroscale defects, e.g. micropipes, and improves the quality of the crystal. In this study, an epi-layer grown over a macrodefect was evaluated by micro-Raman scattering spectroscopy. Before the growth process, the density of the stacking fault was high and the carrier density spatially inhomogeneous in the vicinity of the macrodefects. On the other hand, after growth, the layer over the macrodefect displayed good quality; the density of the stacking fault was less than that before growth and the homogeneity of the carrier density improved.",

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