Crystal structure and ferroelectric property of tungsten-substituted Bi4Ti3O12 thin films prepared by metal-organic chemical vapor deposition

Tomohiro Sakai; Takayuki Watanabe; Minoru Osada; Masato Kakihana; Yuji Noguchi; Masaru Miyayama; Hiroshi Funakubo

doi:10.1143/jjap.42.2850

Crystal structure and ferroelectric property of tungsten-substituted Bi₄Ti₃O₁₂ thin films prepared by metal-organic chemical vapor deposition

Tomohiro Sakai, Takayuki Watanabe, Minoru Osada, Masato Kakihana, Yuji Noguchi, Masaru Miyayama, Hiroshi Funakubo

Research output: Contribution to journal › Article › peer-review

29 Citations (Scopus)

Abstract

W-substituted Bi₄Ti₃O₁₂ (BIT), Bi₄(Ti_3-xW_x)O₁₂, films were prepared on (111)Pt/IrO₂/SiO₂/Si substrates at 600°C by metalorganic chemical vapor deposition (MOCVD). The degree of (117) orientation and the lattice spacing of 117 Bi₄(Ti_3-xW_x)O₁₂ increased with increasing W content up to x = 0.25. Ferroelectricity was hardly observed in as-deposited films but confirmed in the films after annealing at 700° C. The coercive field (E_c) monotonically increased with increasing W content, but the remanent polarization (P_r) showed a maximum value at x = 0.11. P_T and E_c of Bi₄(Ti_2.89W_0.11)O₁₂ thin film after heat treatment was 13 μC/cm² and 160kV/cm, respectively. W-substituted films showed high fatigue resistance against continuous switching up to 8 × 10¹⁰ cycles. These results show that W substitution for BIT film is effective in improving the ferroelectricity.

Original language	English
Pages (from-to)	2850-2852
Number of pages	3
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	42
Issue number	5 A
DOIs	https://doi.org/10.1143/jjap.42.2850
Publication status	Published - May 2003
Externally published	Yes

All Science Journal Classification (ASJC) codes

Engineering(all)
Physics and Astronomy(all)

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10.1143/jjap.42.2850

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Sakai, T., Watanabe, T., Osada, M., Kakihana, M., Noguchi, Y., Miyayama, M., & Funakubo, H. (2003). Crystal structure and ferroelectric property of tungsten-substituted Bi₄Ti₃O₁₂ thin films prepared by metal-organic chemical vapor deposition. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 42(5 A), 2850-2852. https://doi.org/10.1143/jjap.42.2850

Crystal structure and ferroelectric property of tungsten-substituted Bi₄Ti₃O₁₂ thin films prepared by metal-organic chemical vapor deposition. / Sakai, Tomohiro; Watanabe, Takayuki; Osada, Minoru et al.

In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 42, No. 5 A, 05.2003, p. 2850-2852.

Research output: Contribution to journal › Article › peer-review

Sakai, T, Watanabe, T, Osada, M, Kakihana, M, Noguchi, Y, Miyayama, M & Funakubo, H 2003, 'Crystal structure and ferroelectric property of tungsten-substituted Bi₄Ti₃O₁₂ thin films prepared by metal-organic chemical vapor deposition', Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, vol. 42, no. 5 A, pp. 2850-2852. https://doi.org/10.1143/jjap.42.2850

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title = "Crystal structure and ferroelectric property of tungsten-substituted Bi4Ti3O12 thin films prepared by metal-organic chemical vapor deposition",

abstract = "W-substituted Bi4Ti3O12 (BIT), Bi4(Ti3-xWx)O12, films were prepared on (111)Pt/IrO2/SiO2/Si substrates at 600°C by metalorganic chemical vapor deposition (MOCVD). The degree of (117) orientation and the lattice spacing of 117 Bi4(Ti3-xWx)O12 increased with increasing W content up to x = 0.25. Ferroelectricity was hardly observed in as-deposited films but confirmed in the films after annealing at 700° C. The coercive field (Ec) monotonically increased with increasing W content, but the remanent polarization (Pr) showed a maximum value at x = 0.11. PT and Ec of Bi4(Ti2.89W0.11)O12 thin film after heat treatment was 13 μC/cm2 and 160kV/cm, respectively. W-substituted films showed high fatigue resistance against continuous switching up to 8 × 1010 cycles. These results show that W substitution for BIT film is effective in improving the ferroelectricity.",

author = "Tomohiro Sakai and Takayuki Watanabe and Minoru Osada and Masato Kakihana and Yuji Noguchi and Masaru Miyayama and Hiroshi Funakubo",

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doi = "10.1143/jjap.42.2850",

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T1 - Crystal structure and ferroelectric property of tungsten-substituted Bi4Ti3O12 thin films prepared by metal-organic chemical vapor deposition

AU - Sakai, Tomohiro

AU - Watanabe, Takayuki

AU - Osada, Minoru

AU - Kakihana, Masato

AU - Noguchi, Yuji

AU - Miyayama, Masaru

AU - Funakubo, Hiroshi

PY - 2003/5

Y1 - 2003/5

N2 - W-substituted Bi4Ti3O12 (BIT), Bi4(Ti3-xWx)O12, films were prepared on (111)Pt/IrO2/SiO2/Si substrates at 600°C by metalorganic chemical vapor deposition (MOCVD). The degree of (117) orientation and the lattice spacing of 117 Bi4(Ti3-xWx)O12 increased with increasing W content up to x = 0.25. Ferroelectricity was hardly observed in as-deposited films but confirmed in the films after annealing at 700° C. The coercive field (Ec) monotonically increased with increasing W content, but the remanent polarization (Pr) showed a maximum value at x = 0.11. PT and Ec of Bi4(Ti2.89W0.11)O12 thin film after heat treatment was 13 μC/cm2 and 160kV/cm, respectively. W-substituted films showed high fatigue resistance against continuous switching up to 8 × 1010 cycles. These results show that W substitution for BIT film is effective in improving the ferroelectricity.

AB - W-substituted Bi4Ti3O12 (BIT), Bi4(Ti3-xWx)O12, films were prepared on (111)Pt/IrO2/SiO2/Si substrates at 600°C by metalorganic chemical vapor deposition (MOCVD). The degree of (117) orientation and the lattice spacing of 117 Bi4(Ti3-xWx)O12 increased with increasing W content up to x = 0.25. Ferroelectricity was hardly observed in as-deposited films but confirmed in the films after annealing at 700° C. The coercive field (Ec) monotonically increased with increasing W content, but the remanent polarization (Pr) showed a maximum value at x = 0.11. PT and Ec of Bi4(Ti2.89W0.11)O12 thin film after heat treatment was 13 μC/cm2 and 160kV/cm, respectively. W-substituted films showed high fatigue resistance against continuous switching up to 8 × 1010 cycles. These results show that W substitution for BIT film is effective in improving the ferroelectricity.

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Crystal structure and ferroelectric property of tungsten-substituted Bi₄Ti₃O₁₂ thin films prepared by metal-organic chemical vapor deposition

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