Crystalline InGaZnO quaternary nanowires with superlattice structure for high-performance thin-film transistors

Fangzhou Li; Sen Po Yip; Ruoting Dong; Ziyao Zhou; Changyong Lan; Xiaoguang Liang; Dapan Li; You Meng; Xiaolin Kang; Johnny C. Ho

doi:10.1007/s12274-019-2434-4

Crystalline InGaZnO quaternary nanowires with superlattice structure for high-performance thin-film transistors

Fangzhou Li, Sen Po Yip, Ruoting Dong, Ziyao Zhou, Changyong Lan, Xiaoguang Liang, Dapan Li, You Meng, Xiaolin Kang, Johnny C. Ho

Research output: Contribution to journal › Article › peer-review

13 Citations (Scopus)

Abstract

Amorphous indium—gallium—zinc oxide (a-IGZO) materials have been widely explored for various thin-film transistor (TFT) applications; however, their device performance is still restricted by the intrinsic material issues especially due to their non-crystalline nature. In this study, highly crystalline superlattice-structured IGZO nanowires (NWs) with different Ga concentration are successfully fabricated by enhanced ambient-pressure chemical vapor deposition (CVD). The unique superlattice structure together with the optimal Ga concentration (i.e., 31 at.%) are found to effectively modulate the carrier concentration as well as efficiently suppress the oxygen vacancy formation for the superior NW device performance. In specific, the In_1.8Ga_1.8Zn₂₄O₇ NW field-effect transistor exhibit impressive device characteristics with the average electron mobility of ~ 110 cm²·V⁻¹·s⁻¹ and on/off current ratio of ~ 10⁶. Importantly, these NWs can also be integrated into NW parallel arrays for the construction of high-performance TFT devices, in which their performance is comparable to many state-of-the-art IGZO TFTs. All these results can evidently indicate the promising potential of these crystalline superlattice-structured IGZO NWs for the practical utilization in next-generation metal-oxide TFT device technologies. [Figure not available: see fulltext.].

Original language	English
Pages (from-to)	1796-1803
Number of pages	8
Journal	Nano Research
Volume	12
Issue number	8
DOIs	https://doi.org/10.1007/s12274-019-2434-4
Publication status	Published - Aug 1 2019
Externally published	Yes

All Science Journal Classification (ASJC) codes

Materials Science(all)
Electrical and Electronic Engineering

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10.1007/s12274-019-2434-4

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@article{2d6762fe86c548d488d98b07568ebfb5,

title = "Crystalline InGaZnO quaternary nanowires with superlattice structure for high-performance thin-film transistors",

abstract = "Amorphous indium—gallium—zinc oxide (a-IGZO) materials have been widely explored for various thin-film transistor (TFT) applications; however, their device performance is still restricted by the intrinsic material issues especially due to their non-crystalline nature. In this study, highly crystalline superlattice-structured IGZO nanowires (NWs) with different Ga concentration are successfully fabricated by enhanced ambient-pressure chemical vapor deposition (CVD). The unique superlattice structure together with the optimal Ga concentration (i.e., 31 at.%) are found to effectively modulate the carrier concentration as well as efficiently suppress the oxygen vacancy formation for the superior NW device performance. In specific, the In1.8Ga1.8Zn24O7 NW field-effect transistor exhibit impressive device characteristics with the average electron mobility of ~ 110 cm2·V−1·s−1 and on/off current ratio of ~ 106. Importantly, these NWs can also be integrated into NW parallel arrays for the construction of high-performance TFT devices, in which their performance is comparable to many state-of-the-art IGZO TFTs. All these results can evidently indicate the promising potential of these crystalline superlattice-structured IGZO NWs for the practical utilization in next-generation metal-oxide TFT device technologies. [Figure not available: see fulltext.].",

author = "Fangzhou Li and Yip, {Sen Po} and Ruoting Dong and Ziyao Zhou and Changyong Lan and Xiaoguang Liang and Dapan Li and You Meng and Xiaolin Kang and Ho, {Johnny C.}",

note = "Funding Information: This work is financially supported by the National Natural Science Foundation of China (No. 51672229), the General Research Fund (CityU 11211317) and the Theme-based Research (T42-103/16-N) of the Research Grants Council of Hong Kong SAR, China, and the Science Technology and Innovation Committee of Shenzhen Municipality (NO. JCYJ20170818095520778), and a grant from the Shenzhen Research Institute, City University of Hong Kong. Publisher Copyright: {\textcopyright} 2019, Tsinghua University Press and Springer-Verlag GmbH Germany, part of Springer Nature.",

year = "2019",

month = aug,

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doi = "10.1007/s12274-019-2434-4",

language = "English",

volume = "12",

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journal = "Nano Research",

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TY - JOUR

T1 - Crystalline InGaZnO quaternary nanowires with superlattice structure for high-performance thin-film transistors

AU - Li, Fangzhou

AU - Yip, Sen Po

AU - Dong, Ruoting

AU - Zhou, Ziyao

AU - Lan, Changyong

AU - Liang, Xiaoguang

AU - Li, Dapan

AU - Meng, You

AU - Kang, Xiaolin

AU - Ho, Johnny C.

N1 - Funding Information: This work is financially supported by the National Natural Science Foundation of China (No. 51672229), the General Research Fund (CityU 11211317) and the Theme-based Research (T42-103/16-N) of the Research Grants Council of Hong Kong SAR, China, and the Science Technology and Innovation Committee of Shenzhen Municipality (NO. JCYJ20170818095520778), and a grant from the Shenzhen Research Institute, City University of Hong Kong. Publisher Copyright: © 2019, Tsinghua University Press and Springer-Verlag GmbH Germany, part of Springer Nature.

PY - 2019/8/1

Y1 - 2019/8/1

N2 - Amorphous indium—gallium—zinc oxide (a-IGZO) materials have been widely explored for various thin-film transistor (TFT) applications; however, their device performance is still restricted by the intrinsic material issues especially due to their non-crystalline nature. In this study, highly crystalline superlattice-structured IGZO nanowires (NWs) with different Ga concentration are successfully fabricated by enhanced ambient-pressure chemical vapor deposition (CVD). The unique superlattice structure together with the optimal Ga concentration (i.e., 31 at.%) are found to effectively modulate the carrier concentration as well as efficiently suppress the oxygen vacancy formation for the superior NW device performance. In specific, the In1.8Ga1.8Zn24O7 NW field-effect transistor exhibit impressive device characteristics with the average electron mobility of ~ 110 cm2·V−1·s−1 and on/off current ratio of ~ 106. Importantly, these NWs can also be integrated into NW parallel arrays for the construction of high-performance TFT devices, in which their performance is comparable to many state-of-the-art IGZO TFTs. All these results can evidently indicate the promising potential of these crystalline superlattice-structured IGZO NWs for the practical utilization in next-generation metal-oxide TFT device technologies. [Figure not available: see fulltext.].

AB - Amorphous indium—gallium—zinc oxide (a-IGZO) materials have been widely explored for various thin-film transistor (TFT) applications; however, their device performance is still restricted by the intrinsic material issues especially due to their non-crystalline nature. In this study, highly crystalline superlattice-structured IGZO nanowires (NWs) with different Ga concentration are successfully fabricated by enhanced ambient-pressure chemical vapor deposition (CVD). The unique superlattice structure together with the optimal Ga concentration (i.e., 31 at.%) are found to effectively modulate the carrier concentration as well as efficiently suppress the oxygen vacancy formation for the superior NW device performance. In specific, the In1.8Ga1.8Zn24O7 NW field-effect transistor exhibit impressive device characteristics with the average electron mobility of ~ 110 cm2·V−1·s−1 and on/off current ratio of ~ 106. Importantly, these NWs can also be integrated into NW parallel arrays for the construction of high-performance TFT devices, in which their performance is comparable to many state-of-the-art IGZO TFTs. All these results can evidently indicate the promising potential of these crystalline superlattice-structured IGZO NWs for the practical utilization in next-generation metal-oxide TFT device technologies. [Figure not available: see fulltext.].

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DO - 10.1007/s12274-019-2434-4

M3 - Article

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SN - 1998-0124

VL - 12

SP - 1796

EP - 1803

JO - Nano Research

JF - Nano Research

IS - 8

ER -

Crystalline InGaZnO quaternary nanowires with superlattice structure for high-performance thin-film transistors

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