Crystalline Si solar cells fabricated by CO2 laser doping

Yasuaki Ishikawa; Tatsuki Honda; Seiya Yoshinaga; Yunjian Jiang; Yukiharu Uraoka; Yosuke Watanabe; Hiroshi Ikenoue

doi:10.1109/PVSC.2015.7356065

Crystalline Si solar cells fabricated by CO2 laser doping

Yasuaki Ishikawa, Tatsuki Honda, Seiya Yoshinaga, Yunjian Jiang, Yukiharu Uraoka, Yosuke Watanabe, Hiroshi Ikenoue

Faculty of Information Science and Electrical Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

We proposed CO2 laser doping technique as a fabrication method of c-Si solar cell, and demonstrated its availabilities with the cell characteristics. P and B-doping with relatively high carrier density around 1020 cm-3 were realized by the CO2 laser irradiation. We found that the pulse frequency is one of the most important parameter to improve the cell performances.

Original language	English
Title of host publication	2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781479979448
DOIs	https://doi.org/10.1109/PVSC.2015.7356065
Publication status	Published - Dec 14 2015
Event	42nd IEEE Photovoltaic Specialist Conference, PVSC 2015 - New Orleans, United States Duration: Jun 14 2015 → Jun 19 2015

Publication series

Name	2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015

Other

Other	42nd IEEE Photovoltaic Specialist Conference, PVSC 2015
Country/Territory	United States
City	New Orleans
Period	6/14/15 → 6/19/15

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials

Access to Document

10.1109/PVSC.2015.7356065

Cite this

Ishikawa, Y., Honda, T., Yoshinaga, S., Jiang, Y., Uraoka, Y., Watanabe, Y., & Ikenoue, H. (2015). Crystalline Si solar cells fabricated by CO2 laser doping. In 2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015 [7356065] (2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC.2015.7356065

Crystalline Si solar cells fabricated by CO2 laser doping. / Ishikawa, Yasuaki; Honda, Tatsuki; Yoshinaga, Seiya et al.

2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015. Institute of Electrical and Electronics Engineers Inc., 2015. 7356065 (2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Ishikawa, Y, Honda, T, Yoshinaga, S, Jiang, Y, Uraoka, Y, Watanabe, Y & Ikenoue, H 2015, Crystalline Si solar cells fabricated by CO2 laser doping. in 2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015., 7356065, 2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015, Institute of Electrical and Electronics Engineers Inc., 42nd IEEE Photovoltaic Specialist Conference, PVSC 2015, New Orleans, United States, 6/14/15. https://doi.org/10.1109/PVSC.2015.7356065

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title = "Crystalline Si solar cells fabricated by CO2 laser doping",

abstract = "We proposed CO2 laser doping technique as a fabrication method of c-Si solar cell, and demonstrated its availabilities with the cell characteristics. P and B-doping with relatively high carrier density around 1020 cm-3 were realized by the CO2 laser irradiation. We found that the pulse frequency is one of the most important parameter to improve the cell performances.",

author = "Yasuaki Ishikawa and Tatsuki Honda and Seiya Yoshinaga and Yunjian Jiang and Yukiharu Uraoka and Yosuke Watanabe and Hiroshi Ikenoue",

year = "2015",

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day = "14",

doi = "10.1109/PVSC.2015.7356065",

language = "English",

series = "2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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AU - Uraoka, Yukiharu

AU - Watanabe, Yosuke

AU - Ikenoue, Hiroshi

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AB - We proposed CO2 laser doping technique as a fabrication method of c-Si solar cell, and demonstrated its availabilities with the cell characteristics. P and B-doping with relatively high carrier density around 1020 cm-3 were realized by the CO2 laser irradiation. We found that the pulse frequency is one of the most important parameter to improve the cell performances.

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ER -

Crystalline Si solar cells fabricated by CO2 laser doping

Abstract

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Other

All Science Journal Classification (ASJC) codes

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