TY - JOUR
T1 - Crystalline-structural evaluations of cubic AlN thin films heteroepitaxially grown on sapphire (0001) by pulsed laser deposition
AU - Ueda, Yutaro
AU - Daio, Takeshi
AU - Yoshida, Tomohiro
AU - Akamine, Hiroshi
AU - Tominaga, Aki
AU - Okajima, Toshihiro
AU - Yoshitake, Tsuyoshi
PY - 2013/8
Y1 - 2013/8
N2 - Cubic β-AlN thin films with different thicknesses were grown on sapphire (0001) in nitrogen atmosphere by pulsed laser deposition with sintered AlN targets, and their film structures were evaluated by transmission electron microscopy (TEM) and X-ray diffraction (XRD). It was found that β-AlN layers with a lattice constant of 7.89 A are epitaxially grown on sapphire (0001) with a relationship of β-AlN(111)[111̄]|| Al2O 3(0001)[11̄00] at film thicknesses of less than 20 nm, and at larger thicknesses, polycrystalline β-AlN grains are grown on the epitaxial β-AlN layers in the Stranski-Krastanov (SK) mode.
AB - Cubic β-AlN thin films with different thicknesses were grown on sapphire (0001) in nitrogen atmosphere by pulsed laser deposition with sintered AlN targets, and their film structures were evaluated by transmission electron microscopy (TEM) and X-ray diffraction (XRD). It was found that β-AlN layers with a lattice constant of 7.89 A are epitaxially grown on sapphire (0001) with a relationship of β-AlN(111)[111̄]|| Al2O 3(0001)[11̄00] at film thicknesses of less than 20 nm, and at larger thicknesses, polycrystalline β-AlN grains are grown on the epitaxial β-AlN layers in the Stranski-Krastanov (SK) mode.
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U2 - 10.7567/JJAP.52.08JE03
DO - 10.7567/JJAP.52.08JE03
M3 - Article
AN - SCOPUS:84883146936
SN - 0021-4922
VL - 52
JO - Japanese Journal of Applied Physics
JF - Japanese Journal of Applied Physics
IS - 8 PART 2
M1 - 08JE03
ER -