Crystalline-structural evaluations of cubic AlN thin films heteroepitaxially grown on sapphire (0001) by pulsed laser deposition

Yutaro Ueda, Takeshi Daio, Tomohiro Yoshida, Hiroshi Akamine, Aki Tominaga, Toshihiro Okajima, Tsuyoshi Yoshitake

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Cubic β-AlN thin films with different thicknesses were grown on sapphire (0001) in nitrogen atmosphere by pulsed laser deposition with sintered AlN targets, and their film structures were evaluated by transmission electron microscopy (TEM) and X-ray diffraction (XRD). It was found that β-AlN layers with a lattice constant of 7.89 A are epitaxially grown on sapphire (0001) with a relationship of β-AlN(111)[111̄]|| Al2O 3(0001)[11̄00] at film thicknesses of less than 20 nm, and at larger thicknesses, polycrystalline β-AlN grains are grown on the epitaxial β-AlN layers in the Stranski-Krastanov (SK) mode.

Original languageEnglish
Article number08JE03
JournalJapanese Journal of Applied Physics
Issue number8 PART 2
Publication statusPublished - Aug 2013


All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

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