Crystallization mechanism of a-Ge, a-Si and a-SiGe films by SR soft X-ray irradiation

Yuki Nonomura, Nobuya Isoda, Akira Heya, Kazuhiro Kanda, Naoto Matsuo, Shuji Miyamoto, Sho Amano, Takayasu Mochizuki, Taizoh Sadoh, Masanobu Miyao

Research output: Contribution to conferencePaper

2 Citations (Scopus)

Abstract

We investigated low-temperature crystallization of a-Ge, a-Si and a-SiGe films by the SR soft X-ray irradiation at storage ring current of 25-220 mA and dose quantity of 50 mA · h. The relationship between electron excitation-atom movement process, thermal process and the storage ring current are investigated.

Original languageEnglish
Pages707-710
Number of pages4
Publication statusPublished - Dec 1 2010
Event17th International Display Workshops, IDW'10 - Fukuoka, Japan
Duration: Dec 1 2010Dec 3 2010

Other

Other17th International Display Workshops, IDW'10
CountryJapan
CityFukuoka
Period12/1/1012/3/10

Fingerprint

Storage rings
Crystallization
Irradiation
X rays
Atoms
Electrons
Temperature
Hot Temperature

All Science Journal Classification (ASJC) codes

  • Computer Vision and Pattern Recognition
  • Human-Computer Interaction

Cite this

Nonomura, Y., Isoda, N., Heya, A., Kanda, K., Matsuo, N., Miyamoto, S., ... Miyao, M. (2010). Crystallization mechanism of a-Ge, a-Si and a-SiGe films by SR soft X-ray irradiation. 707-710. Paper presented at 17th International Display Workshops, IDW'10, Fukuoka, Japan.

Crystallization mechanism of a-Ge, a-Si and a-SiGe films by SR soft X-ray irradiation. / Nonomura, Yuki; Isoda, Nobuya; Heya, Akira; Kanda, Kazuhiro; Matsuo, Naoto; Miyamoto, Shuji; Amano, Sho; Mochizuki, Takayasu; Sadoh, Taizoh; Miyao, Masanobu.

2010. 707-710 Paper presented at 17th International Display Workshops, IDW'10, Fukuoka, Japan.

Research output: Contribution to conferencePaper

Nonomura, Y, Isoda, N, Heya, A, Kanda, K, Matsuo, N, Miyamoto, S, Amano, S, Mochizuki, T, Sadoh, T & Miyao, M 2010, 'Crystallization mechanism of a-Ge, a-Si and a-SiGe films by SR soft X-ray irradiation', Paper presented at 17th International Display Workshops, IDW'10, Fukuoka, Japan, 12/1/10 - 12/3/10 pp. 707-710.
Nonomura Y, Isoda N, Heya A, Kanda K, Matsuo N, Miyamoto S et al. Crystallization mechanism of a-Ge, a-Si and a-SiGe films by SR soft X-ray irradiation. 2010. Paper presented at 17th International Display Workshops, IDW'10, Fukuoka, Japan.
Nonomura, Yuki ; Isoda, Nobuya ; Heya, Akira ; Kanda, Kazuhiro ; Matsuo, Naoto ; Miyamoto, Shuji ; Amano, Sho ; Mochizuki, Takayasu ; Sadoh, Taizoh ; Miyao, Masanobu. / Crystallization mechanism of a-Ge, a-Si and a-SiGe films by SR soft X-ray irradiation. Paper presented at 17th International Display Workshops, IDW'10, Fukuoka, Japan.4 p.
@conference{68a4cab36ba542808ee1be3d391ddc4b,
title = "Crystallization mechanism of a-Ge, a-Si and a-SiGe films by SR soft X-ray irradiation",
abstract = "We investigated low-temperature crystallization of a-Ge, a-Si and a-SiGe films by the SR soft X-ray irradiation at storage ring current of 25-220 mA and dose quantity of 50 mA · h. The relationship between electron excitation-atom movement process, thermal process and the storage ring current are investigated.",
author = "Yuki Nonomura and Nobuya Isoda and Akira Heya and Kazuhiro Kanda and Naoto Matsuo and Shuji Miyamoto and Sho Amano and Takayasu Mochizuki and Taizoh Sadoh and Masanobu Miyao",
year = "2010",
month = "12",
day = "1",
language = "English",
pages = "707--710",
note = "17th International Display Workshops, IDW'10 ; Conference date: 01-12-2010 Through 03-12-2010",

}

TY - CONF

T1 - Crystallization mechanism of a-Ge, a-Si and a-SiGe films by SR soft X-ray irradiation

AU - Nonomura, Yuki

AU - Isoda, Nobuya

AU - Heya, Akira

AU - Kanda, Kazuhiro

AU - Matsuo, Naoto

AU - Miyamoto, Shuji

AU - Amano, Sho

AU - Mochizuki, Takayasu

AU - Sadoh, Taizoh

AU - Miyao, Masanobu

PY - 2010/12/1

Y1 - 2010/12/1

N2 - We investigated low-temperature crystallization of a-Ge, a-Si and a-SiGe films by the SR soft X-ray irradiation at storage ring current of 25-220 mA and dose quantity of 50 mA · h. The relationship between electron excitation-atom movement process, thermal process and the storage ring current are investigated.

AB - We investigated low-temperature crystallization of a-Ge, a-Si and a-SiGe films by the SR soft X-ray irradiation at storage ring current of 25-220 mA and dose quantity of 50 mA · h. The relationship between electron excitation-atom movement process, thermal process and the storage ring current are investigated.

UR - http://www.scopus.com/inward/record.url?scp=79956321462&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=79956321462&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:79956321462

SP - 707

EP - 710

ER -