Crystallization mechanism of a-Ge, a-Si and a-SiGe films by SR soft X-ray irradiation

Yuki Nonomura; Nobuya Isoda; Akira Heya; Kazuhiro Kanda; Naoto Matsuo; Shuji Miyamoto; Sho Amano; Takayasu Mochizuki; Taizoh Sadoh; Masanobu Miyao

Crystallization mechanism of a-Ge, a-Si and a-SiGe films by SR soft X-ray irradiation

Yuki Nonomura, Nobuya Isoda, Akira Heya, Kazuhiro Kanda, Naoto Matsuo, Shuji Miyamoto, Sho Amano, Takayasu Mochizuki, Taizoh Sadoh, Masanobu Miyao

Electronic Devices

Research output: Contribution to conference › Paper › peer-review

2 Citations (Scopus)

Abstract

We investigated low-temperature crystallization of a-Ge, a-Si and a-SiGe films by the SR soft X-ray irradiation at storage ring current of 25-220 mA and dose quantity of 50 mA · h. The relationship between electron excitation-atom movement process, thermal process and the storage ring current are investigated.

Original language	English
Pages	707-710
Number of pages	4
Publication status	Published - 2010
Event	17th International Display Workshops, IDW'10 - Fukuoka, Japan Duration: Dec 1 2010 → Dec 3 2010

Other

Other	17th International Display Workshops, IDW'10
Country/Territory	Japan
City	Fukuoka
Period	12/1/10 → 12/3/10

All Science Journal Classification (ASJC) codes

Computer Vision and Pattern Recognition
Human-Computer Interaction

Cite this

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title = "Crystallization mechanism of a-Ge, a-Si and a-SiGe films by SR soft X-ray irradiation",

abstract = "We investigated low-temperature crystallization of a-Ge, a-Si and a-SiGe films by the SR soft X-ray irradiation at storage ring current of 25-220 mA and dose quantity of 50 mA · h. The relationship between electron excitation-atom movement process, thermal process and the storage ring current are investigated.",

author = "Yuki Nonomura and Nobuya Isoda and Akira Heya and Kazuhiro Kanda and Naoto Matsuo and Shuji Miyamoto and Sho Amano and Takayasu Mochizuki and Taizoh Sadoh and Masanobu Miyao",

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pages = "707--710",

note = "17th International Display Workshops, IDW'10 ; Conference date: 01-12-2010 Through 03-12-2010",

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TY - CONF

T1 - Crystallization mechanism of a-Ge, a-Si and a-SiGe films by SR soft X-ray irradiation

AU - Nonomura, Yuki

AU - Isoda, Nobuya

AU - Heya, Akira

AU - Kanda, Kazuhiro

AU - Matsuo, Naoto

AU - Miyamoto, Shuji

AU - Amano, Sho

AU - Mochizuki, Takayasu

AU - Sadoh, Taizoh

AU - Miyao, Masanobu

PY - 2010

Y1 - 2010

N2 - We investigated low-temperature crystallization of a-Ge, a-Si and a-SiGe films by the SR soft X-ray irradiation at storage ring current of 25-220 mA and dose quantity of 50 mA · h. The relationship between electron excitation-atom movement process, thermal process and the storage ring current are investigated.

AB - We investigated low-temperature crystallization of a-Ge, a-Si and a-SiGe films by the SR soft X-ray irradiation at storage ring current of 25-220 mA and dose quantity of 50 mA · h. The relationship between electron excitation-atom movement process, thermal process and the storage ring current are investigated.

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UR - http://www.scopus.com/inward/citedby.url?scp=79956321462&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:79956321462

SP - 707

EP - 710

T2 - 17th International Display Workshops, IDW'10

Y2 - 1 December 2010 through 3 December 2010

ER -

Crystallization mechanism of a-Ge, a-Si and a-SiGe films by SR soft X-ray irradiation

Abstract

Other

All Science Journal Classification (ASJC) codes

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