Crystallization mechanism of a-Ge, a-Si and a-SiGe films by SR soft X-ray irradiation

Yuki Nonomura, Nobuya Isoda, Akira Heya, Kazuhiro Kanda, Naoto Matsuo, Shuji Miyamoto, Sho Amano, Takayasu Mochizuki, Taizoh Sadoh, Masanobu Miyao

Research output: Contribution to conferencePaper

2 Citations (Scopus)

Abstract

We investigated low-temperature crystallization of a-Ge, a-Si and a-SiGe films by the SR soft X-ray irradiation at storage ring current of 25-220 mA and dose quantity of 50 mA · h. The relationship between electron excitation-atom movement process, thermal process and the storage ring current are investigated.

Original languageEnglish
Pages707-710
Number of pages4
Publication statusPublished - Dec 1 2010
Event17th International Display Workshops, IDW'10 - Fukuoka, Japan
Duration: Dec 1 2010Dec 3 2010

Other

Other17th International Display Workshops, IDW'10
CountryJapan
CityFukuoka
Period12/1/1012/3/10

All Science Journal Classification (ASJC) codes

  • Computer Vision and Pattern Recognition
  • Human-Computer Interaction

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    Nonomura, Y., Isoda, N., Heya, A., Kanda, K., Matsuo, N., Miyamoto, S., Amano, S., Mochizuki, T., Sadoh, T., & Miyao, M. (2010). Crystallization mechanism of a-Ge, a-Si and a-SiGe films by SR soft X-ray irradiation. 707-710. Paper presented at 17th International Display Workshops, IDW'10, Fukuoka, Japan.