Crystallization mechanism of a-Ge, a-Si and a-SiGe films by SR soft X-ray irradiation

Yuki Nonomura, Nobuya Isoda, Akira Heya, Kazuhiro Kanda, Naoto Matsuo, Shuji Miyamoto, Sho Amano, Takayasu Mochizuki, Taizoh Sadoh, Masanobu Miyao

Research output: Contribution to conferencePaperpeer-review

2 Citations (Scopus)


We investigated low-temperature crystallization of a-Ge, a-Si and a-SiGe films by the SR soft X-ray irradiation at storage ring current of 25-220 mA and dose quantity of 50 mA · h. The relationship between electron excitation-atom movement process, thermal process and the storage ring current are investigated.

Original languageEnglish
Number of pages4
Publication statusPublished - 2010
Event17th International Display Workshops, IDW'10 - Fukuoka, Japan
Duration: Dec 1 2010Dec 3 2010


Other17th International Display Workshops, IDW'10

All Science Journal Classification (ASJC) codes

  • Computer Vision and Pattern Recognition
  • Human-Computer Interaction


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